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Электронный компонент: HFB30PA60CPBF

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Features
Description
International Rectifier's HFA30PA60C is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier previously available.
With basic ratings of 600 volts and 15 amps per Leg continuous current, the
HFA30PA60C is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product
line features extremely low values of peak recovery current (I
RRM
) and does not
exhibit any tendency to "snap-off" during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA30PA60C is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA30PA60CPbF
Parameter
Max.
Units
V
R
Cathode-to-Anode Voltage
600
V
I
F
@ T
C
= 100C
Continuous Forward Current
15
I
FSM
Single Pulse Forward Current
150
I
FRM
Maximum Repetitive Forward Current
60
P
D
@ T
C
= 25C
Maximum Power Dissipation
74
P
D
@ T
C
= 100C Maximum Power Dissipation
29
T
J
Operating Junction and
T
STG
Storage Temperature Range
Absolute Maximum Ratings (per Leg)
-55 to +150
W
A
C
V
R
= 600V
V
F
(typ.)* = 1.2V
I
F(AV)
= 15A
Q
rr
(typ.)= 80nC
I
RRM
(typ.)
= 4.0A
t
rr
(typ.)
= 19ns
di
(rec)M
/dt (typ.)* = 160A/s
*
125C
TO-247AC
1
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1
3
2
PD - 95685A
Ultrafast Recovery
Ultrasoft Recovery
Very Low
I
RRM
Very Low
Q
rr
Specified at Operating Conditions
Lead-Free
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
10/18/04
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2
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Parameter
Min.
Typ.
Max.
Units
T
lead
Lead Temperature
300
C
Junction-to-Case, Single Leg Conducting
1.7
Junction-to-Case, Both Legs Conducting
0.85
R
thJA
Thermal Resistance, Junction to Ambient
40
R
thCS
Thermal Resistance, Case to Heat Sink
0.25
6.0
g
0.21
(oz)
6.0
12
Kg-cm
5.0
10
lbfin
Parameter
Min. Typ. Max. Units
Test Conditions
V
BR
Cathode Anode Breakdown Voltage
600
V
I
R
= 100A
1.3
1.7
I
F
= 15A
1.5
2.0
V
I
F
= 30A
1.2
1.6
I
F
= 15A, T
J
= 125C
1.0
10
V
R
= V
R
Rated
400 1000
T
J
= 125C, V
R
= 0.8 x V
R
Rated
D
Rated
C
T
Junction Capacitance
25
50
pF
V
R
= 200V
Measured lead to lead 5mm from
package body
Electrical Characteristics (per Leg) @ T
J
= 25C (unless otherwise specified)
L
S
Series Inductance
12
nH
See Fig. 3
See Fig. 2
See Fig. 1
Thermal - Mechanical Characteristics (per Leg)
K/W
V
FM
Max Forward Voltage
A
Max Reverse Leakage Current
I
RM
Wt
Weight
Mounting Torque
R
thJC
Dynamic Recovery Characteristics (per Leg)@ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Test Conditions
t
rr
Reverse Recovery Time
19
I
F
= 1.0A, di
f
/dt = 200A/s, V
R
= 30V
t
rr1
42
60
ns
T
J
= 25C
t
rr2
70
120
T
J
= 125C
I
F
= 15A
I
RRM1
Peak Recovery Current
4.0
6.0
T
J
= 25C
I
RRM2
6.5
10
T
J
= 125C
V
R
= 200V
Q
rr1
Reverse Recovery Charge
80
180
T
J
= 25C
Q
rr2
220 600
T
J
= 125C
di
f
/dt = 200A/s
di
(rec)M
/dt1
Peak Rate of Fall of Recovery Current
250
T
J
= 25C
di
(rec)M
/dt2
During t
b
160
T
J
= 125C
A/s
nC
A
See Fig. 5, 10
See Fig. 6
See Fig. 7
See Fig. 8
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
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HFA30PA60CPbF
3
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0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
mal
R
e
s
pons
e
(
Z
)
1
th
J
C
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics, (per Leg)
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage, (per Leg)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage, (per Leg)
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current,
(per Leg)
Instantaneous
Forward
Current
-

I
F
(A)
Junction
Capacitance
-C
T

(pF)
Reverse
Current
-

I
R

(A)
1
10
100
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
FM
Forward Voltage Drop - V (V)
T = 150C
T = 125C
T = 25C
J
J
J
A
Forward Voltage Drop - V
FM
( V )
0.01
0.1
1
10
100
1000
10000
0
100
200
300
400
500
600
R
T = 150C
A
T = 125C
T = 25C
J
J
J
Reverse Voltage - V (V)
10
100
0
100
200
300
400
500
600
T = 25C
J
Reverse Voltage - V (V)
R
A
A
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4
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Fig. 7 - Typical Stored Charge vs. di
f
/dt,
(per Leg)
Fig. 8 - Typical di
(rec)M
/dt vs. di
f
/dt,
(per Leg)
Fig. 5 - Typical Reverse Recovery Time vs.
di
f
/dt, (per Leg)
Fig. 6 - Typical Recovery Current vs. di
f
/dt,
(per Leg)
trr-

(ns)
Irr-

(

A
)
Q
r
r
- (nC)
di
(rec)
M/dt-

(
A

/

s
)
0
20
40
60
80
100
100
1000
f
di /dt - (A/s)
A
I = 30A
I = 15A
I = 5.0A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
0
5
10
15
20
25
100
1000
f
di /dt - (A/s)
A
I = 30A
I = 15A
I = 5.0A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
0
200
400
600
800
100
1000
f
di /dt - (A/s)
A
I = 30A
I = 15A
I = 5.0A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
100
1000
10000
100
1000
f
di /dt - (A/s)
I = 30A
A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125C
T = 25C
R
J
J
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5
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4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and
Definitions
Fig. 9 - Reverse Recovery Parameter Test
Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
Note: PbF suffix at the end of the part number indicates Lead-Free
Device Code
1
2
4
3
HF
A
30
PA 60
C
5
Ordering Information Table
1
-
Hexfred Family
2
-
Process Designator A
= subs. elec. irrad.
B
= subs. Platinum
3
-
Current Rating
(30 = 30A)
4
-
Package Outline
(PA = TO-247, 3 pins)
5
-
Voltage Rating
(60 = 600V)
6
-
Configuration
(C
= Center Tap Common Cathode)
6