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Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
IPS022G
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD60203
Description
The IPS022G are fully protected dual low side SMART
POWER MOSFETs respectively. They feature over-
current, over-temperature, ESD protection and drain
to source active clamp.These devices combine a
HEXFET POWER MOSFET and a gate driver. They
offer full protection and high reliability required in
harsh environments. The driver allows short switch-
ing times and provides efficient protection by turning
OFF the power MOSFET when the temperature ex-
ceeds 165
o
C or when the drain current reaches 5A.
These devices restart once the input is cycled. The
avalanche capability is significantly enhanced by
the active clamp and covers most inductive load
demagnetizations.
Package
Product Summary
R
ds(on)
150m
(max)
V
clamp
50V
I
shutdown
5A
T
on
/T
off
1.5
s
8-Lead SOIC
IPS022G
(Dual)
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1
Typical Connection
S
Q
Load
D
S
control
IN
R in series
(if needed)
Logic signal
(Refer to lead assignment for correct pin configuration)
IPS022G
2
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Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25
o
C unless otherwise specified). PCB mounting uses the standard foot-
print with 70
m copper thickness.
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vds
Maximum drain to source voltage
--
47
Vin
Maximum input voltage
-0.3
7
Iin, max
Maximum IN current
-10
+10
mA
Isd
cont.
Diode max. continuous current
(1)
(
lsd mosfets, rth=125
o
C/W)
--
1.4
Isd
pulsed
Diode max. pulsed current
(1) (for ea. mosfet)
--
10
Pd
Maximum power dissipation
(1)
(
Pd mosfets, rth=125
o
C/W)
--
1
W
ESD1
Electrostatic discharge voltage
(Human Body)
--
4
C=100pF, R=1500
,
ESD2
Electrostatic discharge voltage
(Machine Model)
--
0.5
C=200pF, R=0
,
L=10
H
T stor.
Max. storage temperature
-55
150
Tj max.
Max. junction temperature
-40
+150
V
A
kV
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth1
Thermal resistance with standard footprint
(2 mos on)
(2 mosfets on)
--
100
--
Rth2
Thermal resistance with standard footprint
(1 mos on)
(1 mosfet on)
--
127
--
Rth3
Thermal resistance with 1" square footprint
(2 mos on)
(2 mosfets on)
--
60
--
Thermal Characteristics
o
C/W
o
C
IPS022G
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3
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max. Units
Vds (max) Continuous drain to source voltage
--
35
VIH
High level input voltage
4
6
VIL
Low level input voltage
0
0.5
Ids
Continuous drain current
(TAmbient = 85
o
C, IN = 5V, rth = 100
o
C/W, Tj = 85
o
C)
--
1
A
Rin
Recommended resistor in series with IN pin
0.5
5
k
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
--
1
S
Fr-Isc
(2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
V
(2) Operations at higher switching frequencies is possible. See Appl. notes.
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 10
, Rinput = 50
,
100
s
pulse, T
j
= 25
o
C, (unless otherwise specified).
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Ton
Turn-on delay time
0.15
0.5
1
Tr
Rise time
0.4
0.9
2
Trf
Time to 130% final Rds(on)
2
6
12
Toff
Turn-off delay time
0.8
2
3.5
Tf
Fall time
0.5
1.3
2.5
Qin
Total gate charge
--
3.3
--
nC
Vin = 5V
See figure 2
See figure 2
s
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rds(on)
ON state resistance Tj = 25
o
C
100
130
150
Tj = 150
o
C
--
220
280
Idss 1
Drain to source leakage current
0
0.01
25
Vcc = 14V, Tj = 25
o
C
Idss 2
Drain to source leakage current
0
0.1
50
Vcc = 40V, Tj = 25
o
C
V
clamp 1
Drain to source clamp voltage 1
48
54
56
Id = 20mA
(see Fig.3 & 4)
V
clamp 2
Drain to source clamp voltage 2
50
56
60
Vin
clamp
IN to source clamp voltage
7
8
9.5
Iin = 1 mA
Vth
IN threshold voltage
1
1.5
2
Id = 50mA, Vds = 14V
Iin, -on
ON state IN positive current
25
90
200
Vin = 5V
Iin, -off
OFF state IN positive current
50
130
250
Vin = 5V
over-current triggered
Static Electrical Characteristics
Standard footprint 70
m copper thickness. (Tj = 25
o
C unless otherwise specified.)
m
Vin = 5V, Ids = 1A
Id=Ishutdown
(see Fig.3 & 4)
V
A
A
IPS022G
4
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Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Tsd
Over temperature threshold
--
165
--
o
C
See fig. 1
Isd
Over current threshold
4
5.5
7
A
See fig. 1
V
reset
IN protection reset threshold
1.5
2.3
3
V
Treset
Time to reset protection
2
10 40
s Vin = 0V, Tj = 25
o
C
EOI_OT
Short circuit energy (see application note)
--
400
--
J
Vcc = 14V
Protection Characteristics
Lead Assignments
Part Number
8 Lead SOIC
(Dual)
IPS022G
Functional Block Diagram
All values are typical
IN
DRAIN
SOURCE
8.1 V
80
A
47 V
I sense
200 k
1000
S
Q
R
Q
T > 165c
I > Isd
1
S1 In1 S2 In2
D1 D1 D2 D2
IPS022G
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5
Figure 1 - Timing diagram
Tr-in
10 %
90 %
90 %
10 %
Td on
Td off
tf
tr
Ids
Tr-in
Vin
Vds
Figure 2 - IN rise time & switching time definitions
Tsd
(165 c)
Vin
Ids
Isd
I shutdown
T
T shutdown
t < T reset
t > T reset
5 V
0 V
14 V
IN
D
S
5 v
0 v
L
R
+
-
Vds
Ids
Vin
V load
Rem : V load is negative
during demagnetization
Figure 4 - Active clamp test circuit
Ids
Vds
Vin
T clamp
Vds clamp
( Vcc )
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
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