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Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
IPS031
(
S
)
FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 60150-J
Description
The IPS031/IPS031S are fully protected three terminal
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165
o
C
or when the drain current reaches 12A. The device
restarts once the input is cycled. The avalanche capability
is significantly enhanced by the active clamp and covers
most inductive load demagnetizations.
Product Summary
R
ds(on)
60m
(max)
V
clamp
50V
I
shutdown
12A
T
on
/T
off
1.5
s
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1
Packages
3-Lead D
2
Pak
IPS031S
3-Lead TO-220
IPS031
Typical Connection
S
Q
Load
D
S
control
IN
R in series
(if needed)
Logic signal
(Refer to lead assignment for correct pin configuration)
IPS031(S)
2
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(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application. Notes.
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max. Units
Vds (max) Continuous drain to source voltage
--
35
VIH
High level input voltage
4
6
VIL
Low level input voltage
0
0.5
Ids
Continuous drain current
Tamb=85
o
C
(TAmbient = 85
o
C, IN = 5V, rth = 60
o
C/W, Tj = 125
o
C) IPS031
--
3.1
A
(TAmbient = 85
o
C, IN = 5V, rth = 80
o
C/W, Tj = 125
o
C) IPS031S
--
2.8
Rin
Recommended resistor in series with IN pin
0.2
5
k
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
--
1
S
Fr-Isc
(2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
V
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth 1
Thermal resistance free air
--
60
--
Rth 2
Thermal resistance junction to case
--
3
--
Rth 1
Thermal resistance with standard footprint
--
80
--
Rth 2
Thermal resistance with 1" square footprint
--
60
--
Rth 3
Thermal resistance junction to case
--
3
--
Thermal Characteristics
TO-220
D
2
PAK (SMD220)
o
C/W
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25
o
C unless otherwise specified). PCB mounting uses the standard foot-
print with 70
m copper thickness.
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vds
Maximum drain to source voltage
--
47
Vin
Maximum input voltage
-0.3
7
Iin, max
Maximum IN current
-10
+10
mA
Isd
cont.
Diode max. continuous current
(1)
rth=62
o
C/W IPS031
--
2.8
TO220 free air
rth=5
o
C/W IPS031
--
18
TO220 with Rth=5
o
C/W
rth=80
o
C/W IPS031S
--
2.2
SMD220 Std. footprint
Isd
pulsed
Diode max. pulsed current
(1)
--
18
Pd
Maximum power dissipation
(1)
(rth=62
o
C/W) IPS031
--
2
(rth=80
o
C/W) IPS031S
--
1.56
ESD1
Electrostatic discharge voltage
(Human Body)
--
4
C=100pF, R=1500
,
ESD2
Electrostatic discharge voltage
(Machine Model)
--
0.5
C=200pF, R=0
,
L=10
H
T stor.
Max. storage temperature
-55
150
Tj max.
Max. junction temperature
-40
+150
Tlead
Lead temperature (soldering, 10 seconds)
--
300
V
W
A
o
C
kV
IPS031(S)
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3
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Tsd
Over temperature threshold
--
165
--
o
C
See fig. 1
Isd
Over current threshold
10
14
18
A
See fig. 1
V
reset
IN protection reset threshold
1.5
2.3
3
V
Treset
Time to reset protection
2
10 40
s Vin = 0V, Tj = 25
o
C
EOI_OT
Short circuit energy (see application note)
--
400
--
J
Vcc = 14V
Protection Characteristics
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rds(on)
ON state resistance Tj = 25
o
C
20
45
60
Rds(on)
ON state resistance Tj = 150
o
C
--
75
100
Idss
Drain to source leakage current
0
0.5
25
Vcc = 14V, Tj = 25
o
C
@Tj=25
o
C
Idss2
Drain to source leakage current
0
5
50
Vcc = 40V, Tj = 25
o
C
@Tj=25
o
C
V
clamp 1
Drain to source clamp voltage 1
47
52
56
Id = 20mA
(see Fig.3 & 4)
V
clamp 2
Drain to source clamp voltage 2
50
53
60
Vin
clamp
IN to source clamp voltage
7
8.1
9.5
Iin = 1 mA
Vth
IN threshold voltage
1
1.6
2
Id = 50mA, Vds = 14V
Iin, -on
ON state IN positive current
25
90
200
Vin = 5V
Iin, -off
OFF state IN positive current
50
130
250
Vin = 5V
over-current triggered
Static Electrical Characteristics
(Tj = 25
o
C unless otherwise specified.)
m
Vin = 5V, Ids = 1A
Id=Ishutdown
(see Fig.3 & 4)
V
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 5
, Rinput = 50
,
100
s pulse,T
j
= 25
o
C, (unless otherwise specified).
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Ton
Turn-on delay time
0.05
0.3
0.6
Tr
Rise time
0.4
1
2
Trf
Time to 130% final Rds(on)
--
8
--
Toff
Turn-off delay time
0.8
2
3.5
Tf
Fall time
0.5
1.5
2.5
Qin
Total gate charge
--
11
--
nC
Vin = 5V
See figure 2
See figure 2
s
A
A
IPS031(S)
4
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Lead Assignments
Part Number
1 2 3
In D S
TO-220
IPS031
D
2
PAK (SMD220)
IPS031S
1 3
In D S
2 (D)
2 (D)
IN
DRAIN
SOURCE
8.1 V
80
A
47 V
I sense
200 k
300
S
Q
R
Q
T > 165c
I > 1sd
Functional Block Diagram
All values are typical
IPS031(S)
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5
14 V
IN
D
S
5 v
0 v
L
R
+
-
Vds
Ids
Vin
V load
Rem : V load is negative
during demagnetization
Figure 4 - Active clamp test circuit
Ids
Vds
Vin
T clamp
Vds clamp
( Vcc )
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
Figure 1 - Timing diagram
Tr-in
10 %
90 %
90 %
10 %
Td on
Td off
tf
tr
Ids
Tr-in
Vin
Vds
Figure 2 - IN rise time & switching time definitions
Tsd
(165 c)
Vin
Ids
Isd
I shutdown
T
T shutdown
t < T reset
t > T reset
5 V
0 V
IPS031(S)
6
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Figure 6 - Normalised Rds ON (%) Vs Tj (
o
C)
Figure 8 - Turn-OFF Delay Time & Fall Time (us)
Vs Input Voltage (V)
Figure 7 - Turn-ON Delay Time, Rise Time & Time
to 130% final Rds(on) (us) Vs Input Voltage (V)
Figure 5 - Rds ON (m
) Vs Input Voltage (V)
All curves are typical values with standard footprints. Operating in the shaded area is not recommended.
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
ton delay
rise tim e
130% final rdson
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
4
5
6
7
8
Tj = 150
o
C
Tj = 25
o
C
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
toff delay
fall tim e
0%
20%
40%
60%
80%
100%
120%
140%
160%
180%
200%
-50 -25
0
25
50
75 100 125 150 175
IPS031(S)
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7
Figure 12 - I shutdown (A) Vs Temperature (
o
C)
Figure 9 - Turn-ON Delay Time, Rise Time & Time
to 130% final Rds(on) (us) Vs IN Resistor (
)
Figure 10 - Turn-OFF Delay Time & Fall
Time (us) Vs IN Resistor (
)
Figure 11 - Current Iimitation & I shutdown (A)
Vs Vin (V)
0 .1
1
1 0
1 0 0
10
100
1000
10000
delay on
rise tim e
130% rdson
0 .1
1
1 0
1 0 0
1 0
1 0 0
1 0 0 0
1 0 0 0 0
delay off
fall tim e
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
Isd 25C
Ilim 25C
0
2
4
6
8
10
12
14
16
18
20
-50 -25
0
25
50
75 100 125 150
IPS031(S)
8
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Fig.16 - Transient Thermal Impedance (
o
C/W)
Vs Time (s) - IPS031/IPS031S
Figure 14 - Ids (A) Vs Protection Resp. Time (s)
IPS031 & IPS031S
Figure 13 - Max.Cont. Ids (A) Vs Amb.
Temperature (
o
C)
Figure 15 - Iclamp (A) Vs Inductive Load (mH)
0.1
1
10
100
0 . 0 1
0 . 1
1
1 0
1 0 0
s ingle puls e m ax. cur re nt
100 Hz rth=60C/W dT=25C
1k Hz rth=60C/W dT=25C
Vbat = 14 V
Tjini = T sd
1
10
100
- - - - Tj=25 C _____Tj = 100 C
Free air / standard footprint
0.01
0.1
1
10
100
____ Rth free air/std. footprint
- - - - - Rth junction to case
0
2
4
6
8
10
12
14
16
18
20
-50
0
50
100
150
200
rth = 5C/W
rth = 15C/W
1" footprint 35C/W
std. footprint 60C/W
IPS031(S)
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9
0
20
40
60
80
100
120
140
160
180
200
-50
-25
0
25
50
75
100 125 150
Iin,on
Iin,off
80%
85%
90%
95%
100%
105%
110%
115%
120%
-50 -25
0
25
50
75 100 125 150
Vds clam p @ Isd
Vin clam p @ 10m A
Figure 18 - Vin clamp and V clamp2 (%)
Vs Tj (
o
C)
Figure 17 - Input current (
A) Vs Junction (
o
C)
0
2
4
6
8
10
12
14
16
-50
-25
0
25
50
75
100 125 150
Treset
rise tim e
fall tim e
Figure 19 - Turn-on, Turn-off, and treset (
s)
Vs Tj (
o
C)
IPS031(S)
10
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01-6024 00
IRGB 01-3026 01
(TO-220AB)
Case Outline
NOTES:
2
2X
3-Lead TO-220AB
3-Lead D2PAK
01-6022 00
01-0016 05
(TO-263AB)
IPS031(S)
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11
Tape & Reel - D
2
PAK (SMD220)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 6/11/2001
01-3072 00
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