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Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
IPS041L
FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 60152-K
Description
The IPS041L is a fully protected three terminal SMART
POWER MOSFET that features over-current, over-
temperature, ESD protection and drain to source
active clamp.This device combines a HEXFET
POWER MOSFET and a gate driver. It offers full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165
o
C
or when the Drain current reaches 2A. The device
restarts once the input is cycled. The avalanche
capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
Package
Product Summary
R
ds(on)
500m
(max)
V
clamp
50V
I
shutdown
2A
T
on
/T
off
1.5
s
Typical Connection
3 Lead SOT223
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1
S
Q
Load
D
S
control
IN
R in series
(if needed)
Logic signal
(Refer to leads assignments for correct pin configuration)
IPS041L
2
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(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. notes.
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max. Units
Vds (max) Continuous drain to source voltage
--
35
VIH
High level input voltage
4
6
VIL
Low level input voltage
0
0.5
Ids
Continuous drain current
Tamb=85
o
C
(TAmbient = 85
o
C, IN = 5V, rth = 100
o
C/W, Tj = 125
o
C)
--
0.75
A
Rin
Recommended resistor in series with IN pin
1
5
k
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
--
1
S
Fr-Isc
(2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
V
Absolute Maximum Ratings
Absolute maximum ratings indicates sustained limits beyond which damage to the device may occur. All voltage parameters are
referenced to SOURCE lead. (TAmbient = 25
o
C unless otherwise specified). PCB mounting uses the standard footprint with 70
m
copper thickness.
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vds
Maximum drain to source voltage
--
47
Vin
Maximum input voltage
-0.3
7
Iin, max
Maximum IN current
-10
+10
mA
Isd
cont.
Diode max. continuous current
(1)
(rth=125
o
C/W)
--
1.2
Isd
pulsed
Diode max. pulsed current
(1)
--
3
Pd
Maximum power dissipation
(1)
(rth=125
o
C/W)
--
1
W
ESD1
Electrostatic discharge voltage
(Human Body)
--
4
C=100pF, R=1500
,
ESD2
Electrostatic discharge voltage
(Machine Model)
--
0.5
C=200pF, R=0
,
L=10
H
T stor.
Max. storage temperature
-55
150
Tj max.
Max. junction temperature
-40
150
o
C
V
A
kV
o
C
Thermal Characteristics
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth
1
Thermal resistance with standard footprint
--
100
--
Rth
2
Thermal resistance with 1" square footprint
--
60
--
o
C/W
IPS041L
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3
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Tsd
Over temperature threshold
--
165
--
o
C
See fig. 1
Isd
Over current threshold
1.1
1.7
2.2
A
See fig. 1
V
reset
IN protection reset threshold
1.5
2.3
3
V
Treset
Time to reset protection
2
10
40
s Vin = 0V, Tj = 25
o
C
EOI_OT
Short circuit energy (see application note)
--
400
--
J
Vcc = 14V
Protection Characteristics
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rds(on)
ON state resistance Tj = 25
o
C
--
370
500
Tj = 150
o
C
--
590
900
Idss1
Drain to source leakage current
0
0.5
25
Vcc = 14V, Tj = 25
o
C
@Tj=25
o
C
Idss2
Drain to source leakage current
0
5
50
Vcc = 40V, Tj = 25
o
C
@Tj=25
o
C
V
clamp 1
Drain to Source clamp voltage 1
47
52
56
Id = 20mA
(see Fig.3 & 4)
V
clamp 2
Drain to Source clamp voltage 2
50
53
60
Vin
clamp
IN to Source clamp voltage
7
8.1
9.5
Iin = 1 mA
Vin th
IN threshold voltage
1
1.6
2
Id = 50mA, Vds = 14V
Iin, -on
ON state IN positive current
25
90
200
Vin = 5V
Iin, -off
OFF state IN positive current
50
130
250
Vin = 5V
over-current triggered
Static Electrical Characteristics
(Tj = 25
o
C unless otherwise specified.)
m
Vin = 5V, Ids = 1A
Id=Ishutdown
(see Fig.3 & 4)
V
A
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 20
, Rinput = 1k
,
100
s
pulse, T
j
= 25
o
C, (unless otherwise specified).
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Ton
Turn-on delay time
0.05
0.2
0.5
Tr
Rise time
0.5
1.3
2.5
Trf
Time to 130% final Rds(on)
--
5
--
Toff
Turn-off delay time
0.5
1.6
2.5
Tf
Fall time
0.5
1.5
2.5
Qin
Total gate charge
--
1
--
nC
Vin = 5V
See figure 2
See figure 2
s
A
IPS041L
4
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Lead Assignments
(2) D
1 2 3
In D S
Functional Block Diagram
All values are typical
IN
DRAIN
SOURCE
8.1 V
80
A
47 V
I sense
200 k
4000
S
Q
R
Q
T > 165c
I > 1sd
IPS041L
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5
Figure 1 - Timing diagram
Tr-in
10 %
90 %
90 %
10 %
Td on
Td off
tf
tr
Ids
Tr-in
Vin
Vds
Figure 2 - IN rise time & switching time definitions
Tsd
(165 c)
Vin
Ids
Isd
I shutdown
T
T shutdown
t < T reset
t > T reset
5 V
0 V
14 V
IN
D
S
5 v
0 v
L
R
+
-
Vds
Ids
Vin
V load
Rem : V load is negative
during demagnetization
Figure 4 - Active clamp test circuit
Ids
Vds
Vin
T clamp
Vds clamp
( Vcc )
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
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