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Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
IPS0551T
FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No. PD60160-A
Package
Product Summary
Typical Connection
Description
The IPS0551T is a fully protected three terminal SMART
POWER MOSFET that features over-current, over-tem-
perature, ESD protection, and drain to source active
clamp. This device combines a HEXFET POWER
MOSFET and a gate driver. It offers full protection and
high reliability required in harsh environments. The driver
allows short switching times and provides efficient protec-
tion by turning OFF the power MOSFET when temperature
exceeds 165
o
C or when the drain current reaches 100A.
The device restarts once the input is cycled. The ava-
lanche capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
R
ds(on)
5.2m
(max)
V
clamp
40V
I
shutdown
100A
T
on
/T
off
4
s
SUPER SMD220
Advance Information
SUPER TO220
L o a d
R in s e r ie s
( if n e e d e d )
L o g ic s ig n a l
IN
D
c o n t r o l
S
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1
IPS0551T
2
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(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. Notes.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25
o
C unless otherwise specified). PCB mounting uses the standard foot-
print with 70
m copper thickness.
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vds
Maximum drain to source voltage
--
37
Vin
Maximum input voltage
-0.3
7
I+in
Maximum IN current
-10
+10
mA
Isd
cont.
Diode max. continuous current
(1)
(rth=60
o
C/W)
--
2.8
(rth=5
o
C/W)
--
35
Isd
pulsed
Diode max. pulsed current
(1)
--
100
Pd
Maximum power dissipation
(1)
(rth=60
o
C/W)
--
2
W
ESD1
Electrostatic discharge voltage
(Human Body)
--
4
C=100pF, R=1500
,
ESD2
Electrostatic discharge voltage
(Machine Model)
--
0.5
C=200pF, R=0
,
L=10
H
Tj max.
Max. storage & operating junction temp.
-40
+150
Tlead
Lead temperature (soldering, 10 seconds)
--
300
V
A
kV
o
C
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth 1
Thermal resistance free air
--
60
--
Rth 2
Thermal resistance to PCB min footprint
--
60
--
Rth 3
Thermal resistance to PCB 1" sq. footprint
--
35
--
Rth 4
Thermal resistance junction to case
--
0.7
a
Thermal Characteristics
o
C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min. Max. Units
Vds (max) Continuous drain to source voltage
--
18
VIH
High level input voltage
4
6
VIL
Low level input voltage
0
0.5
Ids
Continuous drain current
Tamb=85
o
C
(TAmbient = 85
o
C, IN = 5V, rth = 80
o
C/W, Tj = 125
o
C)
--
8
(TAmbient = 85
o
C, IN = 5V, rth = 5
o
C/W, Tj = 125
o
C)
--
35
Rin
Recommended resistor in series with IN pin
0.1 0.5
k
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
--
1
S
Fr-Isc
(2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
V
A
IPS0551T
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3
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Tsd
Over temperature threshold
--
165
--
o
C
See fig. 1
Isd
Over current threshold
60
90
120
A
See fig. 1
Vreset
IN protection reset threshold
1.5
1.9
2.8
V
Treset
Time to reset protection
2
10
40
s Vin = 0V, Tj = 25
o
C
EOI_OT
Short circuit energy (cf application note)
100
400
1200
J
Vcc = 14V
Protection Characteristics
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rds(on)
ON state resistance Tj = 25
o
C
--
4.5
5.2
@Tj=25
o
C
Rds(on)
ON state resistance Tj = 150
o
C
--
7.5
8.8
@Tj=150
o
C
Idss
Drain to source leakage current
0
0.01
25
A
Vcc = 14V, Tj = 25
o
C
@Tj=25
o
C
V
clamp 1
Drain to source clamp voltage 1
37
40
--
Id = 20mA
(see Fig.3 & 4)
V
clamp 2
Drain to source clamp voltage 2
--
43
48
Vsd
Body diode forward voltage
--
0.85
1
Id = 35A, Vin = 0V
Vin
clamp
IN to source clamp voltage
7
8.0
9.5
Iin = 1 mA
Vth
IN threshold voltage
1
1.5
2
Id = 50mA, Vds = 14V
Iin, on
Input supply current (normal operation)
25
90
300
Vin = 5V
Iin, off
Input supply current (protection mode)
50
130
400
Vin = 5V
over-current triggered
Static Electrical Characteristics
(Tj = 25
o
C unless otherwise specified. Standard footprint 70
m of copper thickness)
Id=Ishutdown
(see Fig.3 & 4)
V
A
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 0.4
, Rinput = 50
,
100
s pulse, T
j
= 25
o
C, (unless otherwise specified).
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Ton
Turn-on delay time
0.25
1
4
Tr
Rise time
0.25
1
4
Trf
Time to 130% final Rds(on)
--
15
--
Toff
Turn-off delay time
1.5
4
8
Tf
Fall time
0.5
2
5
Qin
Total gate charge
--
200
--
nC
Vin = 5V
See figure 2
See figure 2
s
m
Vin = 5V, Ids = 10A
IPS0551T
4
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Lead Assignments
SUPER TO220
1 2 3
In D S
Functional Block Diagram
All values are typical
IN
DRAIN
SOURCE
8V
80
A
37 V
I sense
100 k
200
S
Q
R
Q
T > 165c
I > Isd
SUPER SMD220
(Advanced Information)
2 ( D )
1 2 3
In D S
IPS0551T
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5
14 V
IN
D
S
5 v
0 v
L
R
+
-
Vds
Ids
Vin
V load
Rem : V load is negative
during demagnetization
Figure 4 - Active clamp test circuit
Figure 3 - Active clamp waveforms
Ids
Vds
Vin
T clamp
Vds clamp
( Vcc )
( see Appl . Notes to evaluate power dissipation )
Figure 1 - Timing diagram
Tr-in
10 %
90 %
90 %
10 %
Td on
Td off
tf
tr
Ids
Tr-in
Vin
Vds
Figure 2 - IN rise time & switching time definitions
Tsd
(165 c)
Vin
Ids
Isd
I shutdown
T
T shutdown
t < T reset
t > T reset
5 V
0 V
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