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Электронный компонент: IPS512G

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Features
Over temperature protection (with auto-restart)
Short-circuit protection (current limit)
Active clamp
E.S.D protection
Status feedback
Open load detection
Logic ground isolated from power ground
IPS511G/IPS512G
Data Sheet No.PD60156-K
Description
The IPS511G/IPS512G are fully protected five terminal
high side switches with built in short-circuit, over-tem-
perature, ESD protection, inductive load capability
and diagnostic feedback. The output current is con-
trolled when it reaches Ilim value. The current limitation
is activated until the thermal protection acts. The
over-temperature protection turns off the high side
switch if the junction temperature exceeds Tshutdown.
It will automatically restart after the junction has
cooled 7
o
C below Tshutdown. A diagnostic pin is
provided for status feedback of short-circuit, over-
temperature and open load detection. The double
level shifter circuitry allows large offsets between the
logic ground and the load ground.
Available Package
Product Summary
R
ds(on)
150m
(max)
V
clamp
50V
I
Limit
5A
V
open load
3V
Typical Connection
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
8 Lead SOIC
(Single)
IPS511G
16 Lead SOIC
(Dual)
IPS512G
Load
Logic
signal
control
Logic
Logic Gnd
Load Gnd
Vcc
Out
Gnd
In
Dg
+ 5v
Status
feedback
+ VCC
Output pull-up resistor
Rdg
Rin
15K
Truth Table
Op. Conditions
Normal
Normal
Open load
Open load
Over current
Over current
Over-temperature
Over-temperature
In
H
L
H
L
H
L
H
L
Out
H
L
H
H
L
L (cycling)
L
L (limiting)
Dg
H
L
H
H
L
L
L
L
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1
IPS511G/IPS512G
2
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(1) Limited by junction temperature (pulsed current limited also by internal wiring)
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth1
Thermal resistance with standard footprint
--
a
Rth2
Thermal resistance with 1" square footprint
--
&
a
Rth1
Thermal resistance with standard footprint
(2 mos on)
(2 mosfets on)
--
85
--
Rth2 (1)
Thermal resistance with standard footprint
(1 mos on)
(1 mosfet on)
--
100
--
Rth2
Thermal resistance with 1" square footprint
(2 mos on)
(2 mosfets on)
--
#
--
Thermal Characteristics
8 Lead SOIC
16 Lead SOIC
o
C/W
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (Tj = 25
o
C unless otherwise specified).
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vout
Maximum output voltage
Vcc-50 Vcc+0.3
Voffset
Maximum logic ground to load ground offset Vcc-50 Vcc+0.3
Vin
Maximum Input voltage
-0.3
5.5
Iin, max
Maximum IN current
-5
10
mA
Vdg
Maximum diagnostic output voltage
-0.3
5.5
V
Idg, max
Maximum diagnostic output current
-1
10
mA
Isd
cont.
Diode max. continuous current
(1)
(IPS511G)
--
1.4
(per leg/both legs ON - IPS512G)
--
0.8
Isd
pulsed
Diode max. pulsed current
(1)
--
10
ESD1
Electrostatic discharge voltage
(Human Body)
--
4000
C=100pF, R=1500
,
ESD2
Electrostatic discharge voltage
(Machine Model)
--
500
C=200pF, R=0
,
L=10
H
Pd
Maximum power dissipation
(rth=125
o
C/W) IPS511G
--
1
(rth=85
o
C/W, both legs on) IPS512G
--
1.5
Tj max.
Max. storage & operating junction temp.
-40
+150
Vvv max
Maximum Vcc voltage
--
50
V
V
A
V
o
C
W
IPS511G/IPS512G
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3
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max. Units
Vcc
Continuous Vcc voltage
5.5
35
VIH
High level input voltage
4
5.5
VIL
Low level input voltage
-0.3
0.9
Iout
Continuous output current
Tamb=85
o
C
(TAmbient = 85
o
C, Tj = 125
o
C, rth = 100
o
C/W) IPS511G
--
1.4
Iout
Continuous output current per leg
Tamb=85
o
C
(TAmbient = 85
o
C, Tj = 125
o
C Rth = 85
o
C/W both legs on) IPS512G
--
1.0
Rin
Recommended resistor in series with IN pin
4
6
Rdg
Recommended resistor in series with DG pin
10
20
V
A
k
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rds(on)
ON state resistance Tj = 25
o
C
--
130
150
@Tj=25
o
C
Rds(on)
ON state resistance @ Vcc = 6V
--
130
150
(Vcc=6V)
Rds(on)
ON state resistance Tj = 150
o
C
--
220
--
Vin = 5V, Iout = 2.5A
@Tj=150
o
C
Vcc oper. Operating voltage range
5.5
--
35
V
clamp 1
Vcc to OUT clamp voltage 1
50
56
--
Id = 10mA
(see Fig.1 & 2)
V
clamp 2
Vcc to OUT clamp voltage 2
--
58
65
Vf
Body diode forward voltage
--
0.9
1.2
Id = 2.5A, Vin = 0V
Icc off
Supply current when OFF
--
16
50
A
Vin = 0V, Vout = 0V
Icc on
Supply current when ON
--
0.7
2
mA
Vin = 5V
Icc ac
Ripple current when ON (AC RMS)
--
20
--
A
Vin = 5V
Vdgl
Low level diagnostic output voltage
--
0.15
0.4
V
Idg = 1.6 mA
Iol
Output leakage current
--
60
120
Vout = 6V
Iol
Output leakage current
0
--
25
Vout = 0V
Idg
leakage
Diagnostic output leakage current
--
--
10
Vdg = 5.5V
Vih
IN high threshold voltage
--
2.3
2.5
Vil
IN low threshold voltage
1
2
--
Iin, on
On state IN positive current
--
70
200
A
Vin = 5V
In, hyst.
Input hysteresis
0.1
0.25
0.5
V
Static Electrical Characteristics
(Tj = 25
o
C, Vcc = 14V unless otherwise specified.)
m
Vin = 5V, Iout = 2.5A
Id = Isd
(see Fig.1 & 2)
V
Vin = 5V, Iout = 1A
A
V
IPS511G/IPS512G
4
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Lead Assignments
Part Number
8 Lead SOIC
IPS511G
IPS512G
1
GND IN DG OUT
Vcc Vcc Vcc Vcc
16 Lead SOIC
1
In1 Gnd1 Vcc Vcc Vcc Vcc Out2 Dg2
Dg1 Out1 Vcc Vcc Vcc Vcc Gnd2 In2
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Ilim
Internal current limit
3
5
7
A
Vout = 0V
Tsd+
Over-temp. positive going threshold
--
165
--
o
C
See fig. 2
Tsd-
Over-temp. negative going threshold
--
158
--
o
C
See fig. 2
V
sc
Short-circuit detection voltage (3)
2
3
4
V
See fig. 2
V
open load
Open load detection threshold
2
3
4
V
Protection Characteristics
(3) Referenced to Vcc
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 5.6
, T
j
= 25
o
C, (unless otherwise specified).
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Tdon
Turn-on delay time
--
7
50
Tr1
Rise time to Vout = Vcc - 5V
--
10
50
Tr2
Rise time from the end of TR1 to
Vout = 90% of Vcc
--
45
95
dV/dt (on) Turn ON dV/dt
--
1.3
4
V/
s
Eon
Turn ON energy
--
400
--
J
Tdoff
Turn-off delay time
--
15
50
Tf
Fall time to Vout = 10% of Vcc
--
10
50
dV/dt (off) Turn OFF dV/dt
--
2
6
V/
s
Eoff
Turn OFF energy
--
80
--
J
Tdiag
Vout to Vdiag propagation delay
--
5
15
s
See figure 3
s
s
See figure 4
IPS511G/IPS512G
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5
Functional Block Diagram
All values are typical
2.2 V
2.7 V
+
-
Level
shift
driver
Charge
pump
5 A
VCC
IN
50V
Over
Current
limit
VOUT
GND
DG
7 V
7 V
62 V
40
200 K
+
-
Under voltage
lock out
Open load
3 V
+
-
3 V
Tj
158C
temperature
165C
Short-circuit
Figure 1 - Active clamp waveforms
Figure 2 - Protection timing diagram
Tsd+
(160 )
Vin
Iout
Ilim.
T
5 V
0 V
Tsd-
T shutdown
limiting
cycling
Out
Vin
T clamp
V clamp
( + Vcc )
( see Appl . Notes to evaluate power dissipation )
0 V
I
out