Features

Over temperature shutdown

Over current shutdown

Active clamp

Input referenced to + Vcc

E.S.D protection

Input referenced to Vcc

IPS5551T

FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH

Description

The IPS5551T is a fully protected three terminal high side
switch with built-in short-circuit, over-temperature, ESD
protection, inductive load capability. The input signal is
referenced to Vcc. When the input voltage Vcc - Vin is
higher than the specified threshold, the output power
MOSFET is turned on. When the Vcc - Vin is lower than the
specified Vil threshold, the output MOSFET is turned off.
Input noise immunity is improved by an hysterisis. When
the input is left floating, an internal current source pulls it up
to Vcc. The over-current protection latches off the high side
switch if the output current exceeds the specified Isd. The
over-temperature protection latches off the switch if the
junction temperature exceeds the specified value Tsd. The
device is reset by opening the input pin high.

Package

Product Summary

Rds(on)

6.0m

(max)

V clamp

40V

Ishutdown

100A

Vcc (op.)

5.5 - 18V

Typical Connection

Load

Input
signal

control

Logic

Vcc

Out

+ VCC

Op. Conditions

Normal

Over current

Over-temperature

Out

L (latched)

Truth Table

(3)

Data Sheet No. PD60168-D

(3) In is referenced to Vcc.

In = L means (Vcc -Vin) >Vih

In = H means (Vcc - Vin) <Vil

SUPER TO220

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(Refer to lead assignment for correct pin configuration)

IPS5551T

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(1) Limited by junction temperature. Pulsed current is also limited by wiring

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage pa-
rameters are referenced to Vcc lead. (Tj = 25

C unless otherwise specified). PCB mounting uses the standard

footprint with 70

m copper thickness

Symbol Parameter

Typ.

Max. Units Test Conditions

Rth 1

Thermal resistance free air

Rth 2

Thermal resistance with standard footprint

Rth 3

Thermal resistance with 1" footprint

Rth 4

Thermal resistance junction to case

0.7

Thermal Characteristics

C/W

Recommended Operating Conditions

These values are given for a quick design. For operation outside these conditions, please consult the application notes.

Symbol Parameter

Min.

Max. Units

Vcc - Vin Continuous input voltage

Vcc

Supply to power ground voltage

Iout

Continuous output current (rth c/amb. < 5

C/W, Tj = 125

Iout

Continuous output current

Tamb=85

(TAmbient = 85

C, Tj = 125

C, free air)

Symbol

Parameter

Min.

Max.

Units

Test Conditions

Vcc -Vin max

Maximum input voltage

-0.3

Vcc -Vin1 max Max. transient Input voltage

(less than 1s)

-0.3

Iin max

Maximum input current

-1

Vcc -Vout max Maximum output voltage

-0.3

Isd

cont.

Diode max. continuous current

(1)

(rth = 62

C/W)

2.8

Isd1

cont.

Diode max. continuous current

(1)

(rth = 5

C/W)

Isd

pulsed

Diode max. pulsed current

(1)

100

Power dissipation (rth = 62

C/W)

ESD1

Electrostatic discharge voltage

(Human Body)

tbd

C = 100 pF, R = 1500

ESD2

Electrostatic discharge voltage

(Machine Model)

tbd

C = 200 pF, R = 0

L=10

T stor.

Max. storage temperature

-55

150

Tj max.

Max. junction temperature

-40

150

Tlead

Lead temperature (soldering 10 seconds)

300

IPS5551T

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Symbol Parameter

Min.

Typ.

Max. Units Test Conditions

Tsd

Over temperature shutdown threshold

165

Isd

Over current shutdown threshold

100

150

Treset

Minimum time for protection reset

50 --

Protection Characteristics

= 25

C, and Vcc = 14V (unless otherwise specified).

(2) Input threshold are measured directly between the input pin and the tab. Any parasitic resistance in common
between the load current path and the input signal path can significantly affect the thresholds.

See fig. 4

Switching Electrical Characteristics

Vcc = 14V, Resistive Load = 0.4

, T

= 25

C, (unless otherwise specified).

Symbol Parameter

Min.

Typ.

Max. Units Test Conditions

Tdon

Turn-on delay time to Vcc -Vout = 0.9 Vcc

Tr 1

Rise time to Vcc -Vout = 5 V

Tr 2

Rise time from the end of Tr1 to
Vcc -Vout = 0.1 Vcc

200

400

dV/dt (on) Turn on dV/dt

1.2

Eon

Turn ON energy

Tdoff

Turn-off delay time Vcc -Vout = 0.1 Vcc

130

300

Fall time to Vcc -Vout = 0.9 Vcc

dV/dt (off) Turn OFF dV/dt

Eoff

Turn OFF energy

See figure 2

See figure 3

Static Electrical Characteristics

(Tj = 25

C and Vcc = 14V unless otherwise specified.)

Symbol Parameter

Min.

Typ. Max. Units Test Conditions

Rds(on) 1 ON state resistance

4.6

6.0

Iout=35A,Vcc -Vin=12V
see Fig. 6

Rds(on) 2 ON state resistance

4.6

Iout=17A, Vcc -Vin= 6V

Rds(on) 3 ON state resistance Tj = 150

7.4

Iout = 35A, Tj = 150

clamp 1

Vcc to Vout active clamp voltage

Iout = 10mA

clamp 2

Vcc to Vout active clamp voltage

Iout = 35A - t < 100us

Vsd

Body diode forward voltage

0.85

Id = 35A, Vcc -Vin = 0V

Vcc (op)

Operating voltage range

5.5

Quiescent current

Vcc-Vin=0V,Vcc-Vout=

Iin

Input current

6.5

Vcc - Vin = 14V

Iin, on

Input current when ON

1.3

Vcc - Vin = Vih

Vih

High level input threshold voltage

4.75

5.5

Vcc - Vin (note 2)

Vil

Low level input threshold voltage

4.05

Vcc - Vin (note 2)

Vhys

Input hysterisis

0.3

0.6

1.5

12V

IPS5551T

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Figure 3 - Switching time definitions (turn-off)

Figure 4 - Protection timing diagram

90%

10 %

Td off

Vcc-Vout

Vcc-Vin

DV/dt(off)

Figure 2 - Switching time definitions (turn-on)

Figure 1 - Voltages and currents definition

IPS 5551

Vcc-Vin
Vcc-Vin

max

Vcc-Vin1

max

Vcc-Vin (op)
Vih
Vil
Vhys

Iin
Iin

max

Iin1,2
Iin(on)

Vcc-Vout
Vcc-Vout

max

Vclamp1
Vclamp2

Iout
Iout

max

-Ids

cont.

-Ids

pulsed

Iout

85°C

Isd
Iq

Vcc

Out

Vcc

10 %

Td on

Tr1

Vcc-Vout

Vcc-Vin

90%

Tr2

DV/dt(on)

Tjsd

Iout

Isd

OI shutdown

OT shutdown

t < T reset

t > T reset

12V

0 V

Vcc-Vin

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