HEXFET
Power MOSFET
02/14/02
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.75
R
JA
Junction-to-Ambient (PCB mount)**
40
Thermal Resistance
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1
V
DSS
= 60V
R
DS(on)
= 12m
I
D
= 84A
S
D
G
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010EL) is available for low-
profile applications.
Description
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
84
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
59
A
I
DM
Pulsed Drain Current
330
P
D
@T
C
= 25C
Power Dissipation
200
W
Linear Derating Factor
1.4
W/C
V
GS
Gate-to-Source Voltage
20
V
I
AR
Avalanche Current
50
A
E
AR
Repetitive Avalanche Energy
17
mJ
dv/dt
Peak Diode Recovery dv/dt
4.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting torque, 6-32 or M3 srew
10 lbfin (1.1Nm)
IRF1010ES
IRF1010EL
D
2
Pak
IRF1010ES
TO-262
IRF1010EL
l
Advanced Process Technology
l
Surface Mount (IRF1010ES)
l
Low-profile through-hole (IRF1010EL)
l
175C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
C/W
PD - 91720
IRF1010ES/IRF1010EL
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 50A, V
GS
= 0V
t
rr
Reverse Recovery Time
73
110
ns
T
J
= 25C, I
F
= 50A
Q
rr
Reverse Recovery Charge
220
330
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
84
330
A
Notes:
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
60
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.064
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
12
m
V
GS
= 10V, I
D
= 50A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
69
S
V
DS
= 25V, I
D
= 50A
25
A
V
DS
= 60V, V
GS
= 0V
250
V
DS
= 48V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
130
I
D
= 50A
Q
gs
Gate-to-Source Charge
28
nC
V
DS
= 48V
Q
gd
Gate-to-Drain ("Miller") Charge
44
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
12
V
DD
= 30V
t
r
Rise Time
78
I
D
= 50A
t
d(off)
Turn-Off Delay Time
48
R
G
= 3.6
t
f
Fall Time
53
V
GS
= 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
3210
V
GS
= 0V
C
oss
Output Capacitance
690
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
140
pF
= 1.0MHz, See Fig. 5
E
AS
Single Pulse Avalanche Energy
1180
320
mJ
I
AS
= 50A, L = 260H
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
J
= 25C, L = 260H
R
G
= 25
, I
AS
= 50A, V
GS
=10V
(See Figure 12)
I
SD
50A, di/dt
230A/s, V
DD
V
(BR)DSS
,
T
J
175C
Pulse width
400s; duty cycle
2%.
IRF1010ES/IRF1010EL
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 175 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
4
5
6
7
8
9
10
11
V = 25V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 175 C
J
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
84A
IRF1010ES/IRF1010EL
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
20
40
60
80
100
120
140
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
50A
V
= 12V
DS
V
= 30V
DS
V
= 48V
DS
0.1
1
10
100
1000
0.0
0.6
1.2
1.8
2.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 175 C
J
1
10
100
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
6000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
I D
, Drain-to-Source Current (A)
Tc = 25C
Tj = 175C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
IRF1010ES/IRF1010EL
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25
50
75
100
125
150
175
0
20
40
60
80
100
T , Case Temperature
( C)
I , Drain Current (A)
C
D
LIMITED BY PACKAGE
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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