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06/29/04
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1
HEXFET
is a registered trademark of International Rectifier.
IRF1010EZPbF
IRF1010EZSPbF
IRF1010EZLPbF
HEXFET
Power MOSFET
S
D
G
V
DSS
= 60V
R
DS(on)
= 8.5m
I
D
= 75A
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications,
this HEXFET
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175C junction operat-
ing temperature, fast switching speed and im-
proved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applica-
tions.
D
2
Pak
IRF1010EZS
TO-220AB
IRF1010EZ
TO-262
IRF1010EZL
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25C
Maximum Power Dissipation
W
Linear Derating Factor
W/C
V
GS
Gate-to-Source Voltage
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value
i
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
h
mJ
T
J
Operating Junction and
C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.11
C/W
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
R
JA
Junction-to-Ambient
62
R
JA
Junction-to-Ambient (PCB Mount, steady state)
j
40
Max.
84
60
340
75
10 lbfin (1.1Nm)
140
0.90
20
99
180
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
PD - 95483
Lead-Free
IRF1010EZ/S/LPbF
2
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Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25C, L = 0.077mH,
R
G
= 25
, I
AS
= 51A, V
GS
=10V. Part not
recommended for use above this value.
I
SD
51A, di/dt
260A/s, V
DD
V
(BR)DSS
,
T
J
175C.
Pulse width
1.0ms; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
S
D
G
S
D
G
Static @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
60
V
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.058
V/C
R
DS(on)
Static Drain-to-Source On-Resistance
6.8
8.5
m
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
gfs
Forward Transconductance
200
S
I
DSS
Drain-to-Source Leakage Current
20
A
250
I
GSS
Gate-to-Source Forward Leakage
200
nA
Gate-to-Source Reverse Leakage
-200
Q
g
Total Gate Charge
58
86
nC
Q
gs
Gate-to-Source Charge
19
28
Q
gd
Gate-to-Drain ("Miller") Charge
21
32
t
d(on)
Turn-On Delay Time
19
ns
t
r
Rise Time
90
t
d(off)
Turn-Off Delay Time
38
t
f
Fall Time
54
L
D
Internal Drain Inductance
4.5
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance
7.5
from package
and center of die contact
C
iss
Input Capacitance
2810
pF
C
oss
Output Capacitance
420
C
rss
Reverse Transfer Capacitance
200
C
oss
Output Capacitance
1440
C
oss
Output Capacitance
320
C
oss
eff.
Effective Output Capacitance
510
Diode Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
84
(Body Diode)
A
I
SM
Pulsed Source Current
340
(Body Diode)
V
SD
Diode Forward Voltage
1.3
V
t
rr
Reverse Recovery Time
41
62
ns
Q
rr
Reverse Recovery Charge
54
81
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
V
GS
= 0V, I
D
= 250A
Reference to 25C, I
D
= 1mA
V
GS
= 10V, I
D
= 51A
f
V
DS
= V
GS
, I
D
= 250A
V
DS
= 60V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 125C
R
G
= 7.95
I
D
= 51A
V
DS
= 25V, I
D
= 51A
V
DD
= 30V
I
D
= 51A
V
GS
= 20V
V
GS
= -20V
T
J
= 25C, I
F
= 51A, V
DD
= 30V
di/dt = 100A/s
f
T
J
= 25C, I
S
= 51A, V
GS
= 0V
f
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
GS
= 0V
V
DS
= 25V
V
GS
= 0V, V
DS
= 48V, = 1.0MHz
Conditions
V
GS
= 0V, V
DS
= 0V to 48V
V
DS
= 48V
V
GS
= 10V
f
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 10V
f
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3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
20s PULSE WIDTH
Tj = 175C
4.5V
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
TJ = 25C
TJ = 175C
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20s PULSE WIDTH
Tj = 25C
4.5V
0
20
40
60
80
100
120
140
ID,Drain-to-Source Current (A)
0
10
20
30
40
50
60
70
80
90
100
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
TJ = 25C
TJ = 175C
IRF1010EZ/S/LPbF
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
10
20
30
40
50
60
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 48V
VDS= 30V
VDS= 12V
ID= 51A
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25C
TJ = 175C
VGS = 0V
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
Tc = 25C
Tj = 175C
Single Pulse
IRF1010EZ/S/LPbF
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
ID = 84A
VGS = 10V
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (C/W)
i (sec)
0.415 0.000246
0.410 0.000898
0.285 0.009546
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
C
Ci= i
/
Ri
Ci=
i
/
Ri
25
50
75
100
125
150
175
TC , Case Temperature (C)
0
10
20
30
40
50
60
70
80
90
100
I D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Package
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