Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
41
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
29
A
I
DM
Pulsed Drain Current
160
P
D
@T
C
= 25C
Power Dissipation
170
P
D
@T
C
= 25C
Power Dissipation (PCB Mount)**
3.8
Linear Derating Factor
1.1
Linear Derating Factor (PCB Mount)**
0.025
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
230
mJ
I
AR
Avalanche Current
41
A
E
AR
Repetitive Avalanche Energy
17
mJ
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
IRF1310S
HEXFET
Power MOSFET
PD - 9.1221
Revision 0
V
DSS
= 100V
R
DS(on)
= 0.04
I
D
= 41A
Advanced Process Technology
Ultra Low On-Resistance
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
175C Operating Temperature
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The SMD-220 is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The SMD-220 is suitable for
high current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case
0.90
R
JA
Junction-to-Ambient (PCB Mount)**
40
C/W
R
JA
Junction-to-Ambient
62
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
W/C
W
C
SMD-220
Next Data Sheet
Index
Previous Datasheet
To Order
IRF1310S
Notes:
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
2.5
V
T
J
= 25C, I
S
= 25A, V
GS
= 0V
t
rr
Reverse Recovery Time
140
210
ns
T
J
= 25C, I
F
= 25A
Q
rr
Reverse RecoveryCharge
0.79
1.2
C
di/dt = 100A/s
t
on
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25C, L = 3.1mH
R
G
= 25
, I
AS
= 25A. (See Figure 12)
I
SD
25A, di/dt
170A/s, V
DD
V
(BR)DSS
,
T
J
175C
Pulse width
300s; duty cycle
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
160
41
A
nH
L
D
Internal Drain Inductance
4.5
L
S
Internal Source Inductance
7.5
I
DSS
Drain-to-Source Leakage Current
I
GSS
ns
A
nA
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
100
V
V
GS
= 0V, ID = 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.10
V/C Reference to 25C, I
D
= 1mA
R
DS(ON)
Static Drain-to-Source On-Resistance
0.04
V
GS
= 10V, I
D
= 25A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
12
S
V
DS
= 50V, I
D
= 25A
25
V
DS
= 100V, V
GS
= 0V
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
V
GS
= -20V
Q
g
Total Gate Charge
110
I
D
= 25A
Q
gs
Gate-to-Source Charge
18
nC
V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge
42
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
13
V
DD
= 50V
t
r
Rise Time
77
I
D
= 25A
t
d(off)
Turn-Off Delay Time
82
R
G
= 9.1
t
f
Fall Time
64
R
D
= 2.0
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
2500
V
GS
= 0V
C
oss
Output Capacitance
630
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
130
= 1.0MHz, See Fig. 5
Next Data Sheet
Index
Previous Datasheet
To Order
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF1310S
Fig 1. Typical Output Characteristics,
T
C
= 25
o
C
Fig 2. Typical Output Characteristics,
T
C
= 175
o
C
1
1 0
1 0 0
1 0 0 0
0 .1
1
1 0
1 0 0
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , Drain-to-Source Voltage (V)
DS
20s PULSE WIDTH
T = 25C
C
1
1 0
1 0 0
1 0 0 0
0 .1
1
1 0
1 0 0
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , Drain-to-Source Voltage (V)
DS
20s PULSE WIDTH
T = 175C
C
1
1 0
1 0 0
1 0 0 0
4
5
6
7
8
9
1 0
G S
V , G a te -to -S o u rce V o lta g e (V )
D
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T = 2 5C
J
T = 1 7 5C
J
V = 5 0 V
2 0 s P U L S E W ID T H
D S
0 .0
0 .5
1 .0
1 .5
2 .0
2 .5
3 .0
-6 0 -4 0 -2 0
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
V = 10V
GS
J
T , Junction Temperature (C)
R
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
o
n
)
(
N
o
r
m
a
l
i
z
e
d
)
I = 25A
D
To Order
Next Data Sheet
Index
Previous Datasheet
IRF1310S
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
1 00 0
2 00 0
3 00 0
4 00 0
1
1 0
10 0
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
DS
V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
iss
C
oss
C
rss
GS
iss gs gd ds
rss gd
oss ds gd
0
4
8
1 2
1 6
2 0
0
3 0
6 0
9 0
12 0
Q , Total Gate Charge (nC)
G
FOR TEST CIRCUIT
SEE FIGURE 13
V
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
G
S
V = 80V
V = 50V
V = 20V
DS
DS
DS
I = 25A
D
1
1 0
1 0 0
1 0 0 0
0
0 .5
1
1 .5
2
2 .5
T = 25C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
SD
S
D
T = 175C
J
1
1 0
1 0 0
1 0 0 0
1
1 0
1 0 0
1 0 0 0
V , Drain-to-Source Voltage (V)
DS
I
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10s
100s
1ms
10ms
100ms
T = 25C
T = 175C
Single Pulse
C
J
To Order
Next Data Sheet
Index
Previous Datasheet
IRF1310S
Fig 10a. Switching Time Test Circuit
V
DS
10 V
Pulse Width
1
s
Duty Factor
0.1 %
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
R
D
V
GS
V
DD
R
G
D.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0
1 0
2 0
3 0
4 0
5 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
1 7 5
T , Case Temperature (C)
C
I
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
m
p
s
)
D
0 .0 1
0 .1
1
0 .0 0 0 0 1
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
1 0
t , R ectang ular P ulse D uration (sec)
1
t
h
J
C
D = 0 .5 0
0 .0 1
0 .0 2
0 .0 5
0 .1 0
0 .2 0
S ING L E P U L S E
(T H E R M A L R E S P O N S E )
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
)
P
t
2
1
t
D M
N o te s :
1 . D u ty fa c to r D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J C
C
To Order
Next Data Sheet
Index
Previous Datasheet
PDF 
ZIP