IRF1404
HEXFET
Power MOSFET
Seventh Generation HEXFET
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the industry.
S
D
G
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
162
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
115
A
I
DM
Pulsed Drain Current
650
P
D
@T
C
= 25C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
519
mJ
I
AR
Avalanche Current
95
A
E
AR
Repetitive Avalanche Energy
20
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting Torque, 6-32 or M3 screw
10 lbfin (1.1Nm)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.75
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 0.004
I
D
= 162A
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
10/20/00
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1
TO-220AB
PD -91896E
IRF1404
2
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
40
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.036
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.0035 0.004
V
GS
= 10V, I
D
= 95A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= 10V, I
D
= 250A
g
fs
Forward Transconductance
106
S
V
DS
= 25V, I
D
= 60A
20
A
V
DS
= 40V, V
GS
= 0V
250
V
DS
= 32V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
200
V
GS
= 20V
Gate-to-Source Reverse Leakage
-200
nA
V
GS
= -20V
Q
g
Total Gate Charge
160
200
I
D
= 95A
Q
gs
Gate-to-Source Charge
35
nC
V
DS
= 32V
Q
gd
Gate-to-Drain ("Miller") Charge
42
60
V
GS
= 10V
t
d(on)
Turn-On Delay Time
17
V
DD
= 20V
t
r
Rise Time
140
I
D
= 95A
t
d(off)
Turn-Off Delay Time
72
R
G
= 2.5
t
f
Fall Time
26
R
D
= 0.21
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
7360
V
GS
= 0V
C
oss
Output Capacitance
1680
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
240
= 1.0MHz, See Fig. 5
C
oss
Output Capacitance
6630
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
1490
V
GS
= 0V, V
DS
= 32V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
1540
V
GS
= 0V, V
DS
= 0V to 32V
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
I
SD
95A, di/dt
150A/s, V
DD
V
(BR)DSS
,
T
J
175C
Notes:
Starting T
J
= 25C, L = 0.12mH
R
G
= 25
, I
AS
= 95A. (See Figure 12)
Pulse width
300s; duty cycle
2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 95A, V
GS
= 0V
t
rr
Reverse Recovery Time
71
110
ns
T
J
= 25C, I
F
= 95A
Q
rr
Reverse RecoveryCharge
180
270
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
162
650
A
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
IRF1404
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 175 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
4.0
5.0
6.0
7.0
8.0
9.0
V = 25V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 175 C
J
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
159A
IRF1404
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
12000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
40
80
120
160
200
240
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
95A
V
= 20V
DS
V
= 32V
DS
1
10
100
1000
0.4
0.8
1.2
1.6
2.0
2.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 175 C
J
1
10
100
1000
10000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRF1404
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
25
50
75
100
125
150
175
0
40
80
120
160
200
T , Case Temperature ( C)
I , Drain Current (A)
C
D
LIMITED BY PACKAGE
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF1404
6
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Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
VDS
ID
IG
3mA
VGS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(B R )D SS
I
A S
R G
I
A S
0 .0 1
tp
D .U .T
L
V D S
+
-
VD D
D R IV E R
A
1 5 V
2 0 V
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
0
20
40
60
80
100
IAV , Avalanche Current ( A)
40
42
44
46
48
50
V
DSav
, Avalanche Voltage ( V )
25
50
75
100
125
150
175
0
200
400
600
800
1000
1200
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
ID
TOP
BOTTOM
39A
67A
95A
IRF1404
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7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-channel
HEXFET
Power MOSFETs
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
IRF1404
8
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L E A D A S S IG NM E NT S
1 - G A T E
2 - D R A IN
3 - S O U RC E
4 - D R A IN
- B -
1 .32 (.05 2)
1 .22 (.04 8)
3 X
0.55 (.02 2)
0.46 (.01 8)
2 .92 (.11 5)
2 .64 (.10 4)
4.69 ( .18 5 )
4.20 ( .16 5 )
3X
0.93 (.03 7)
0.69 (.02 7)
4.06 (.16 0)
3.55 (.14 0)
1.15 (.04 5)
M IN
6.47 (.25 5)
6.10 (.24 0)
3 .7 8 (.149 )
3 .5 4 (.139 )
- A -
10 .54 (.4 15)
10 .29 (.4 05)
2.87 (.11 3)
2.62 (.10 3)
1 5.24 (.60 0)
1 4.84 (.58 4)
1 4.09 (.55 5)
1 3.47 (.53 0)
3 X
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
2.54 (.10 0)
2 X
0 .3 6 (.01 4) M B A M
4
1 2 3
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
2 C O N TR O L LIN G D IM E N S IO N : IN C H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
P A R T N U M B E R
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
E X A M P L E : T H IS IS A N IR F 1 0 1 0
W IT H A S S E M B L Y
L O T C O D E 9 B 1 M
A S S E M B L Y
L O T C O D E
D A T E C O D E
(Y Y W W )
Y Y = Y E A R
W W = W E E K
9 2 4 6
IR F 10 1 0
9B 1 M
A
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
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