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Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
169
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
118
A
I
DM
Pulsed Drain Current
680
P
D
@T
C
= 25C
Power Dissipation
330
W
Linear Derating Factor
2.2
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
560
mJ
I
AR
Avalanche Current
See Fig.12a, 12b, 15, 16
A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting Torque, 6-32 or M3 screw
10 lbfin (1.1Nm)
HEXFET
Power MOSFET
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET
Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
S
D
G
Absolute Maximum Ratings
V
DSS
= 55V
R
DS(on)
= 5.3m
I
D
= 169A
Description
3/25/01
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1
q
Advanced Process Technology
q
Ultra Low On-Resistance
q
Dynamic dv/dt Rating
q
175C Operating Temperature
q
Fast Switching
q
Repetitive Avalanche Allowed up to Tjmax
Benefits
AUTOMOTIVE MOSFET
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.45
C/W
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
R
JA
Junction-to-Ambient
62
TO-220AB
PD -93991A
IRF1405
Typical Applications
q
Electric Power Steering (EPS)
q
Anti-lock Braking System (ABS)
q
Wiper Control
q
Climate Control
q
Power Door
IRF1405
2
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.057
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
4.6
5.3
m
V
GS
= 10V, I
D
= 101A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= 10V, I
D
= 250A
g
fs
Forward Transconductance
69
S
V
DS
= 25V, I
D
= 110A
20
A
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
200
V
GS
= 20V
Gate-to-Source Reverse Leakage
-200
nA
V
GS
= -20V
Q
g
Total Gate Charge
170
260
I
D
= 101A
Q
gs
Gate-to-Source Charge
44
66
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
62
93
V
GS
= 10V
t
d(on)
Turn-On Delay Time
13
V
DD
= 38V
t
r
Rise Time
190
I
D
= 110A
t
d(off)
Turn-Off Delay Time
130
R
G
= 1.1
t
f
Fall Time
110
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
5480
V
GS
= 0V
C
oss
Output Capacitance
1210
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
280
= 1.0MHz, See Fig. 5
C
oss
Output Capacitance
5210
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
900
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
1500
V
GS
= 0V, V
DS
= 0V to 44V
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 101A, V
GS
= 0V
t
rr
Reverse Recovery Time
88
130
ns
T
J
= 25C, I
F
= 101A
Q
rr
Reverse RecoveryCharge
250
380
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
169
680
A
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25C, L = 0.11mH
R
G
= 25
, I
AS
= 101A. (See Figure 12).
I
SD
101A, di/dt
210A/s, V
DD
V
(BR)DSS
,
T
J
175C
Pulse width
400s; duty cycle
2%.
Notes:
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
IRF1405
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 175 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
4
6
8
10
12
V = 25V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 175 C
J
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
169A
IRF1405
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
60
120
180
240
300
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
101A
V
= 27V
DS
V
= 44V
DS
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 175 C
J
1
10
100
1000
10000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
IRF1405
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
40
80
120
160
200
T , Case Temperature ( C)
I , Drain Current (A)
C
D
LIMITED BY PACKAGE
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