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IRF1405Z
IRF1405ZS
IRF1405ZL
HEXFET
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 4.9m
I
D
= 75A
08/29/03
www.irf.com
1
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications,
this HEXFET
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
S
D
G
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
C
= 25C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100C Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25C Power Dissipation
W
Linear Derating Factor
W/C
V
GS
Gate-to-Source Voltage
V
E
AS (Thermally limited)
Single Pulse Avalanche Energy
d
mJ
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
h
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
g
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.65
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
R
JA
Junction-to-Ambient (PCB Mount, steady state)
i
40
420
270
See Fig.12a, 12b, 15, 16
230
1.5
20
Max.
150
110
600
75
-55 to + 175
300 (1.6mm from case )
10 lbf
y
in (1.1N
y
m)
HEXFET
is a registered trademark of International Rectifier.
D
2
Pak
IRF1405ZS
TO-220AB
IRF1405Z
TO-262
IRF1405ZL
PD - 94645A
IRF1405Z/S/L
2
www.irf.com
S
D
G
S
D
G
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.049
V/C
R
DS(on)
Static Drain-to-Source On-Resistance
3.7
4.9
m
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
gfs
Forward Transconductance
88
S
I
DSS
Drain-to-Source Leakage Current
20
A
250
I
GSS
Gate-to-Source Forward Leakage
200
nA
Gate-to-Source Reverse Leakage
-200
Q
g
Total Gate Charge
120
180
Q
gs
Gate-to-Source Charge
31
nC
Q
gd
Gate-to-Drain ("Miller") Charge
46
t
d(on)
Turn-On Delay Time
18
t
r
Rise Time
110
t
d(off)
Turn-Off Delay Time
48
ns
t
f
Fall Time
82
L
D
Internal Drain Inductance
4.5
Between lead,
nH
6mm (0.25in.)
L
S
Internal Source Inductance
7.5
from package
and center of die contact
C
iss
Input Capacitance
4780
C
oss
Output Capacitance
770
C
rss
Reverse Transfer Capacitance
410
pF
C
oss
Output Capacitance
2730
C
oss
Output Capacitance
600
C
oss
eff.
Effective Output Capacitance
910
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
75
(Body Diode)
A
I
SM
Pulsed Source Current
600
(Body Diode)
V
SD
Diode Forward Voltage
1.3
V
t
rr
Reverse Recovery Time
30
46
ns
Q
rr
Reverse Recovery Charge
30
45
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
f
V
GS
= 10V
e
V
DD
= 25V
I
D
= 75A
R
G
= 4.4
T
J
= 25C, I
S
= 75A, V
GS
= 0V
e
T
J
= 25C, I
F
= 75A, V
DD
= 25V
di/dt = 100A/s
e
Conditions
V
GS
= 0V, I
D
= 250A
Reference to 25C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
e
V
DS
= V
GS
, I
D
= 250A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
V
DS
= 25V, I
D
= 75A
I
D
= 75A
V
DS
= 44V
Conditions
V
GS
= 10V
e
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 20V
V
GS
= -20V
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25C, L = 0.10mH
R
G
= 25
, I
AS
= 75A, V
GS
=10V. Part not
recommended for use above this value.
Pulse width
1.0ms; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80%
V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population.
100% tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
IRF1405Z/S/L
www.irf.com
3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20s PULSE WIDTH
Tj = 25C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20s PULSE WIDTH
Tj = 175C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
TJ = 25C
TJ = 150C
VDS = 25V
20s PULSE WIDTH
0
25
50
75
100 125 150 175 200
ID,Drain-to-Source Current (A)
0
25
50
75
100
125
150
175
200
G
f
s,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
TJ = 25C
TJ = 175C
IRF1405Z/S/L
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 44V
VDS= 28V
ID= 75A
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25C
TJ = 175C
VGS = 0V
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100sec
Tc = 25C
Tj = 175C
Single Pulse
IRF1405Z/S/L
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
25
50
75
100
125
150
175
TC , Case Temperature (C)
0
25
50
75
100
125
150
I D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Package
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
ID = 75A
VGS = 10V
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
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