Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
X
100
V
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
X
70
V
A
I
DM
Pulsed Drain Current
QX
520
P
D
@T
A
= 25C
Power Dissipation
3.8
W
P
D
@T
C
= 25C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
RX
390
mJ
I
AR
Avalanche Current
Q
See Fig.12a, 12b, 15, 16
A
E
AR
Repetitive Avalanche Energy
W
mJ
dv/dt
Peak Diode Recovery dv/dt
SX
4.6
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
HEXFET
Power MOSFET
S
D
G
Absolute Maximum Ratings
V
DSS
= 75V
R
DS(on)
= 0.0078
I
D
= 100A
V
Description
10/05/01
www.irf.com
1
q
Advanced Process Technology
q
Ultra Low On-Resistance
q
Dynamic dv/dt Rating
q
175C Operating Temperature
q
Fast Switching
q
Repetitive Avalanche Allowed up to Tjmax
Benefits
PD -94335
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.75
C/W
R
JA
Junction-to-Ambient(PCB Mounted,steady-state)**
40
Thermal Resistance
IRF1407S
IRF1407L
TO-262
IRF1407L
D
2
Pak
IRF1407S
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D
2
Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF1407L) is available for low-
profile applications.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note #AN-994.
IRF1407S/IRF1407L
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
75
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.09
V/C
Reference to 25C, I
D
= 1mA
X
R
DS(on)
Static Drain-to-Source On-Resistance
0.0078
V
GS
= 10V, I
D
= 78A
T
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= 10V, I
D
= 250A
g
fs
Forward Transconductance
74
S
V
DS
= 25V, I
D
= 78A
X
20
A
V
DS
= 75V, V
GS
= 0V
250
V
DS
= 60V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
200
V
GS
= 20V
Gate-to-Source Reverse Leakage
-200
nA
V
GS
= -20V
Q
g
Total Gate Charge
160
250
I
D
= 78A
Q
gs
Gate-to-Source Charge
35
52
nC
V
DS
= 60V
Q
gd
Gate-to-Drain ("Miller") Charge
54
81
V
GS
= 10V
TX
t
d(on)
Turn-On Delay Time
11
V
DD
= 38V
t
r
Rise Time
150
I
D
= 78A
t
d(off)
Turn-Off Delay Time
150
R
G
= 2.5
t
f
Fall Time
140
V
GS
= 10V
TX
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
5600
V
GS
= 0V
C
oss
Output Capacitance
890
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
190
= 1.0KHz, See Fig. 5
X
C
oss
Output Capacitance
5800
V
GS
= 0V, V
DS
= 1.0V, = 1.0KHz
C
oss
Output Capacitance
560
V
GS
= 0V, V
DS
= 60V, = 1.0KHz
C
oss
eff.
Effective Output Capacitance
U
1100
V
GS
= 0V, V
DS
= 0V to 60V
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
Q
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 78A, V
GS
= 0V
T
t
rr
Reverse Recovery Time
110
170
ns
T
J
= 25C, I
F
= 78A
Q
rr
Reverse RecoveryCharge
390
590
nC
di/dt = 100A/s
TX
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
100
V
520
A
Q
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
R
Starting T
J
= 25C, L = 0.13mH
R
G
= 25
, I
AS
= 78A. (See Figure 12).
S
I
SD
78A, di/dt
320A/s, V
DD
V
(BR)DSS
,
T
J
175C
T
Pulse width
400s; duty cycle
2%.
Notes:
U
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
V
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
W
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
X
Uses IRF1407 data and test conditions.
IRF1407S/IRF1407L
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
, Drain-to-Source Current (A)
4.5V
20s PULSE WIDTH
Tj = 25C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
, Drain-to-Source Current (A)
4.5V
20s PULSE WIDTH
Tj = 175C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
3.0
5.0
7.0
9.0
11.0
13.0
VGS, Gate-to-Source Voltage (V)
10.00
100.00
1000.00
I D
, Drain-to-Source Current
(
)
TJ = 25C
TJ = 175C
VDS = 15V
20s PULSE WIDTH
-60
-40
-20
0
20
40
60
80
100
120
140 160
180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature
( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I
=
GS
D
10V
130A
IRF1407S/IRF1407L
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
40
80
120
160
200
0
3
6
9
12
15
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I
=
D
78A
V
= 15V
DS
V
= 37V
DS
V
= 60V
DS
0.0
1.0
2.0
3.0
VSD, Source-toDrain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
I SD
, Reverse Drain Current (A)
TJ = 25C
TJ = 175C
VGS = 0V
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
I D
, Drain-to-Source Current (A)
Tc = 25C
Tj = 175C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
IRF1407S/IRF1407L
www.irf.com
5
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
25
50
75
100
125
150
175
0
20
40
60
80
100
120
T , Case Temperature
( C)
I , Drain Current (A)
C
D
LIMITED BY PACKAGE
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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