IRF1503S_L.pmd
HEXFET
Power MOSFET
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
Power MOSFETs utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175C
junction operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
S
D
G
V
DSS
= 30V
R
DS(on)
= 3.3m
I
D
= 75A
Description
12/11/02
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1
Advanced Process Technology
Ultra Low On-Resistance
175C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Benefits
Typical Applications
14V Automotive Electrical Systems
14V Electronic Power Steering
IRF1503S
IRF1503L
D
2
Pak
IRF1503S
TO-262
IRF1503L
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.75
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
Thermal Resistance
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
190
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
130
A
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V (Package limited)
75
I
DM
Pulsed Drain Current
960
P
D
@T
C
= 25C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
510
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value
980
I
AR
Avalanche Current
See Fig.12a, 12b, 15, 16
A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and
-55 to + 175
C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
10 lbfin (1.1Nm)
Absolute Maximum Ratings
PD - 94494A
IRF1503S/IRF1503L
2
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.028
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
2.6
3.3
m
V
GS
= 10V, I
D
= 140A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= 10V, I
D
= 250A
g
fs
Forward Transconductance
75
S
V
DS
= 25V, I
D
= 140A
20
A
V
DS
= 30V, V
GS
= 0V
250
V
DS
= 24V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
200
V
GS
= 20V
Gate-to-Source Reverse Leakage
-200
nA
V
GS
= -20V
Q
g
Total Gate Charge
130
200
I
D
= 140A
Q
gs
Gate-to-Source Charge
36
54
nC
V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge
41
62
V
GS
= 10V
t
d(on)
Turn-On Delay Time
17
V
DD
= 15V
t
r
Rise Time
130
I
D
= 140A
t
d(off)
Turn-Off Delay Time
59
R
G
= 2.5
t
f
Fall Time
48
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
5730
V
GS
= 0V
C
oss
Output Capacitance
2250
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
290
= 1.0MHz, See Fig. 5
C
oss
Output Capacitance
7580
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
2290
V
GS
= 0V, V
DS
= 24V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
3420
V
GS
= 0V, V
DS
= 0V to 24V
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
5.0
13
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 140A, V
GS
= 0V
t
rr
Reverse Recovery Time
71
110
ns
T
J
= 25C, I
F
= 140A
Q
rr
Reverse RecoveryCharge
110
170
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
190
960
A
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25C, L = 0.049mH
R
G
= 25
, I
AS
= 140A. (See Figure 12).
I
SD
140A, di/dt 110A/s, V
DD
V
(BR)DSS
,
T
J
175C
Pulse width
400s; duty cycle 2%.
Notes:
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
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3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20s PULSE WIDTH
Tj = 25C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20s PULSE WIDTH
Tj = 175C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VGS, Gate-to-Source Voltage (V)
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
TJ = 25C
TJ = 175C
VDS = 25V
20s PULSE WIDTH
0
40
80
120
160
200
ID, Drain-to-Source Current (A)
0
40
80
120
160
200
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
TJ = 25C
TJ = 175C
VDS = 25V
20s PULSE WIDTH
Fig 4. Typical Forward Transconductance
Vs. Drain Current
IRF1503S/IRF1503L
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.0
0.4
0.8
1.2
1.6
2.0
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25C
TJ = 175C
VGS = 0V
0
40
80
120
160
200
QG Total Gate Charge (nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 24V
ID= 140A
1
10
100
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25C
Tj = 175C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100sec
1
10
100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd , C ds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
IRF1503S/IRF1503L
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
m
a
l
Res
pons
e
(
Z
)
1
th
JC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
40
80
120
160
200
T , Case Temperature ( C)
I
,
D
r
ai
n C
u
r
r
ent
(
A
)
C
D
LIMITED BY PACKAGE
Fig 10. Normalized On-Resistance
Vs. Temperature
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature
( C)
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
or
m
a
l
i
z
ed)
J
D
S
(
on)
V
=
I
=
GS
D
10V
240A
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