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Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
142
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
100
A
I
DM
Pulsed Drain Current
570
P
D
@T
C
= 25C
Power Dissipation
380
W
Linear Derating Factor
2.5
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
1250
mJ
I
AR
Avalanche Current
See Fig.12a, 12b, 15, 16
A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
5.2
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting Torque, 6-32 or M3 screw
10 lbfin (1.1Nm)
HEXFET
Power MOSFET
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET
Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
S
D
G
Absolute Maximum Ratings
V
DSS
= 75V
R
DS(on)
= 0.0075
I
D
= 142A
Description
9/4/01
www.irf.com
1
q
Ultra Low On-Resistance
q
Dynamic dv/dt Rating
q
175C Operating Temperature
q
Fast Switching
q
Repetitive Avalanche Allowed up to Tjmax
q
Automotive [Q101] Qualified
Benefits
Typical Applications
q
42 Volts Automotive Electrical Systems
q
Electrical Power Steering (EPS)
q
Integrated Starter Alternator
AUTOMOTIVE MOSFET
TO-220AB
PD -94158
IRF1607
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.40
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
Thermal Resistance
IRF1607
2
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
75
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.086
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.00580.0075
V
GS
= 10V, I
D
= 85A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= 10V, I
D
= 250A
g
fs
Forward Transconductance
79
S
V
DS
= 25V, I
D
= 85A
20
A
V
DS
= 75V, V
GS
= 0V
250
V
DS
= 60V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
200
V
GS
= 20V
Gate-to-Source Reverse Leakage
-200
nA
V
GS
= -20V
Q
g
Total Gate Charge
210
320
I
D
= 85A
Q
gs
Gate-to-Source Charge
45
68
nC
V
DS
= 60V
Q
gd
Gate-to-Drain ("Miller") Charge
73
110
V
GS
= 10V
t
d(on)
Turn-On Delay Time
22
V
DD
= 38V
t
r
Rise Time
130
I
D
= 85A
t
d(off)
Turn-Off Delay Time
84
R
G
= 1.8
t
f
Fall Time
86
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
7750
V
GS
= 0V
C
oss
Output Capacitance
1230
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
310
= 1.0MHz, See Fig. 5
C
oss
Output Capacitance
5770
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
790
V
GS
= 0V, V
DS
= 60V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
1420
V
GS
= 0V, V
DS
= 0V to 60V
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 85A, V
GS
= 0V
t
rr
Reverse Recovery Time
130
200
ns
T
J
= 25C, I
F
= 85A
Q
rr
Reverse RecoveryCharge
690 1040
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
142
570
A
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25C, L = 0.21mH
R
G
= 25
, I
AS
= 85A, V
GS
=10V (See Figure 12).
I
SD
85A, di/dt
310A/s, V
DD
V
(BR)DSS
,
T
J
175C
Pulse width
400s; duty cycle
2%.
Notes:
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
IRF1607
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 175 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
4.0
5.0
6.0
7.0
8.0
9.0
10.0
V = 25V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 175 C
J
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
142A
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
, Drain-to-Source Current (A)
4.5V
20s PULSE WIDTH
Tj = 25C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
IRF1607
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
100
200
300
400
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
85A
V
= 15V
DS
V
= 37V
DS
V
= 60V
DS
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
1.8
2.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 175 C
J
1
10
100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
I D
, Drain-to-Source Current (A)
Tc = 25C
Tj = 175C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
IRF1607
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
40
80
120
160
T , Case Temperature
( C)
I , Drain Current (A)
C
D
LIMITED BY PACKAGE
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
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