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Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
135
V
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
96
V
A
I
DM
Pulsed Drain Current
Q
700
P
D
@T
C
= 25C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
R
380
mJ
E
AS
(6 sigma)
Single Pulse Avalanche Energy Tested Value
X
1220
I
AR
Avalanche Current
Q
See Fig.12a, 12b, 15, 16
A
E
AR
Repetitive Avalanche Energy
W
mJ
dv/dt
Peak Diode Recovery dv/dt
S
2.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
HEXFET
Power MOSFET
Absolute Maximum Ratings
V
DSS
= 55V
R
DS(on)
= 4.7m
I
D
= 135A
V
06/10/02
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 94428
HEXFET(R) is a registered trademark of International Rectifier.
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this product are a 175C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
S
D
G
Features
Advanced Process Technology
Ultra Low On-Resistance
175C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Typical Applications
Climate Control
ABS
Electronic Braking
Windshield Wipers
IRF2805S
IRF2805L
D
2
Pak
IRF2805S
TO-262
IRF2805L
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.75
R
JA
Junction-to-Ambient
(PCB Mounted, steady state)**
40
C/W
IRF2805S/IRF2805L
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.06
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
3.9
4.7
m
V
GS
= 10V, I
D
= 104A
T
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= 10V, I
D
= 250A
g
fs
Forward Transconductance
91
S
V
DS
= 25V, I
D
= 104A
20
A
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
200
V
GS
= 20V
Gate-to-Source Reverse Leakage
-200
nA
V
GS
= -20V
Q
g
Total Gate Charge
150
230
I
D
= 104A
Q
gs
Gate-to-Source Charge
38
57
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
52
78
V
GS
= 10V
T
t
d(on)
Turn-On Delay Time
14
V
DD
= 28V
t
r
Rise Time
120
I
D
= 104A
t
d(off)
Turn-Off Delay Time
68
R
G
= 2.5
t
f
Fall Time
110
V
GS
= 10V
T
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
5110
V
GS
= 0V
C
oss
Output Capacitance
1190
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
210
= 1.0MHz, See Fig. 5
C
oss
Output Capacitance
6470
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
860
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
U
1600
V
GS
= 0V, V
DS
= 0V to 44V
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Q
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
R
Starting T
J
= 25C, L = 0.08mH
R
G
= 25
, I
AS
= 104A. (See Figure 12).
S
I
SD
104A, di/dt
240A/s, V
DD
V
(BR)DSS
,
T
J
175C
T
Pulse width
400s; duty cycle
2%.
Notes:
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
Q
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 104A, V
GS
= 0V
T
t
rr
Reverse Recovery Time
80
120
ns
T
J
= 25C, I
F
= 104A
Q
r r
Reverse Recovery Charge
290
430
nC
di/dt = 100A/s
T
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
175
V
700
A
U
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
V
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
W
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
X
This value determined from sample failure population. 100%
tested to this value in production.
IRF2805S/IRF2805L
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature
( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I
=
GS
D
10V
175A
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
10
100
1000
I D
,
D
r
ai
n-
t
o
-
S
o
u
r
c
e C
u
r
r
e
n
t
A)
TJ = 25C
TJ = 175C
VDS = 25V
20s PULSE WIDTH
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
, Drain-to-Source Current (A)
4.5V
20s PULSE WIDTH
Tj = 25C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
I D
, Drain-to-Source Current (A)
4.5V
20s PULSE WIDTH
Tj = 175C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
IRF2805S/IRF2805L
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I SD
,
R
e
v
e
r
s
e D
r
ai
n C
u
r
r
en
t
(
A
)
TJ = 25C
TJ = 175C
VGS = 0V
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
I D
,
Dra
i
n
-
t
o
-S
o
u
rc
e
Cu
rre
n
t
(A)
Tc = 25C
Tj = 175C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100sec
1
10
100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
C
,
C
a
pa
ci
t
a
nc
e (
p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd , C ds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
40
80
120
160
200
240
Q G Total Gate Charge (nC)
0
4
8
12
16
20
V
GS
, G
a
te
-
t
o
-
So
u
r
c
e
Vo
l
t
a
g
e
(
V
)
VDS= 44V
VDS= 28V
ID= 104A
IRF2805S/IRF2805L
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25
50
75
100
125
150
175
0
20
40
60
80
100
120
140
T , Case Temperature
( C)
I , Drain Current (A)
C
D
LIMITED BY PACKAGE
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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