09/03/03
www.irf.com
1
HEXFET
is a registered trademark of International Rectifier.
IRF2807Z
IRF2807ZS
IRF2807ZL
HEXFET
Power MOSFET
S
D
G
V
DSS
= 75V
R
DS(on)
= 9.4m
I
D
= 75A
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications,
this HEXFET
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
D
2
Pak
IRF2807ZS
TO-220AB
IRF2807Z
TO-262
IRF2807ZL
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25C
Maximum Power Dissipation
W
Linear Derating Factor
W/C
V
GS
Gate-to-Source Voltage
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value
i
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
h
mJ
T
J
Operating Junction and
C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.90
C/W
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
R
JA
Junction-to-Ambient
62
R
JA
Junction-to-Ambient (PCB Mount, steady state)
j
40
Max.
89
63
350
75
10 lbfin (1.1Nm)
170
1.1
20
160
200
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
PD - 94659A
IRF2807Z/S/L
2
www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25C, L = 0.12mH,
R
G
= 25
, I
AS
= 53A, V
GS
=10V. Part not
recommended for use above this value.
I
SD
53A, di/dt
420A/s, V
DD
V
(BR)DSS
,
T
J
175C.
Pulse width
1.0ms; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
S
D
G
S
D
G
Static @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
75
V
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.073
V/C
R
DS(on)
Static Drain-to-Source On-Resistance
7.5
9.4
m
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
gfs
Forward Transconductance
67
S
I
DSS
Drain-to-Source Leakage Current
20
A
250
I
GSS
Gate-to-Source Forward Leakage
200
nA
Gate-to-Source Reverse Leakage
-200
Q
g
Total Gate Charge
71
110
nC
Q
gs
Gate-to-Source Charge
19
29
Q
gd
Gate-to-Drain ("Miller") Charge
28
42
t
d(on)
Turn-On Delay Time
18
ns
t
r
Rise Time
79
t
d(off)
Turn-Off Delay Time
40
t
f
Fall Time
45
L
D
Internal Drain Inductance
4.5
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance
7.5
from package
and center of die contact
C
iss
Input Capacitance
3270
pF
C
oss
Output Capacitance
420
C
rss
Reverse Transfer Capacitance
240
C
oss
Output Capacitance
1590
C
oss
Output Capacitance
280
C
oss
eff.
Effective Output Capacitance
440
Diode Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
89
(Body Diode)
A
I
SM
Pulsed Source Current
350
(Body Diode)
V
SD
Diode Forward Voltage
1.3
V
t
rr
Reverse Recovery Time
46
69
ns
Q
rr
Reverse Recovery Charge
80
120
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
V
GS
= 0V, I
D
= 250A
Reference to 25C, I
D
= 1mA
V
GS
= 10V, I
D
= 53A
f
V
DS
= V
GS
, I
D
= 250A
V
DS
= 75V, V
GS
= 0V
V
DS
= 75V, V
GS
= 0V, T
J
= 125C
R
G
= 6.2
I
D
= 53A
V
DS
= 25V, I
D
= 53A
V
DD
= 38V
I
D
= 53A
V
GS
= 20V
V
GS
= -20V
T
J
= 25C, I
F
= 53A, V
DD
= 25V
di/dt = 100A/s
f
T
J
= 25C, I
S
= 53A, V
GS
= 0V
f
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
GS
= 0V
V
DS
= 25V
V
GS
= 0V, V
DS
= 60V, = 1.0MHz
Conditions
V
GS
= 0V, V
DS
= 0V to 60V
V
DS
= 60V
V
GS
= 10V
f
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 10V
f
IRF2807Z/S/L
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3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20s PULSE WIDTH
Tj = 25C
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20s PULSE WIDTH
Tj = 175C
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
0
25
50
75
100
125
150
ID,Drain-to-Source Current (A)
0
25
50
75
100
125
150
G
f
s,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
TJ = 25C
TJ = 175C
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
TJ = 25C
TJ = 175C
VDS = 25V
20s PULSE WIDTH
IRF2807Z/S/L
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
10
20
30
40
50
60
70
80
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 60V
VDS= 38V
VDS= 15V
ID= 53A
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-to-Drain Voltage (V)
0
1
10
100
1000
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25C
TJ = 175C
VGS = 0V
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
Tc = 25C
Tj = 175C
Single Pulse
IRF2807Z/S/L
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
25
50
75
100
125
150
175
TC , Case Temperature (C)
0
10
20
30
40
50
60
70
80
90
100
I D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Package
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
ID = 53A
VGS = 10V
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
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