IRF5305
HEXFET
Power MOSFET
PD - 91385B
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ -10V
-31
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ -10V
-22
A
I
DM
Pulsed Drain Current
-110
P
D
@T
C
= 25C
Power Dissipation
110
W
Linear Derating Factor
0.71
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
280
mJ
I
AR
Avalanche Current
-16
A
E
AR
Repetitive Avalanche Energy
11
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting torque, 6-32 or M3 srew
10 lbfin (1.1Nm)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.4
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
Thermal Resistance
V
DSS
= -55V
R
DS(on)
= 0.06
I
D
= -31A
TO-220AB
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175C Operating Temperature
l
Fast Switching
l
P-Channel
l
Fully Avalanche Rated
Description
3/3/00
S
D
G
IRF5305
2
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Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.3
V
T
J
= 25C, I
S
= -16A, V
GS
= 0V
t
rr
Reverse Recovery Time
71
110
ns
T
J
= 25C, I
F
= -16A
Q
rr
Reverse RecoveryCharge
170
250
nC
di/dt = -100A/s
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-55
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.034
V/C
Reference to 25C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.06
V
GS
= -10V, I
D
= -16A
V
GS(th)
Gate Threshold Voltage
-2.0
-4.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
8.0
S
V
DS
= -25V, I
D
= -16A
-25
A
V
DS
= -55V, V
GS
= 0V
-250
V
DS
= -44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
63
I
D
= -16A
Q
gs
Gate-to-Source Charge
13
nC
V
DS
= -44V
Q
gd
Gate-to-Drain ("Miller") Charge
29
V
GS
= -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
14
V
DD
= -28V
t
r
Rise Time
66
I
D
= -16A
t
d(off)
Turn-Off Delay Time
39
R
G
= 6.8
t
f
Fall Time
63
R
D
= 1.6
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
1200
V
GS
= 0V
C
oss
Output Capacitance
520
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
250
= 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
-16A, di/dt
-280A/s, V
DD
V
(BR)DSS
,
T
J
175C
Notes:
V
DD
= -25V, starting T
J
= 25C, L = 2.1mH
R
G
= 25
, I
AS
= -16A. (See Figure 12)
Pulse width
300s; duty cycle
2%.
-31
-110
A
S
D
G
S
D
G
IRF5305
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
1 0
1 0 0
1 0 0 0
0 . 1
1
1 0
1 0 0
D
D S
2 0 s P U LS E W ID T H
T = 2 5C
c
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , D rain-to-S ourc e V olta ge (V )
VGS
TO P - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOT TOM - 4.5V
-4.5 V
1
1 0
1 0 0
1 0 0 0
0.1
1
1 0
1 0 0
D
D S
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
r
c
e
C
u
rre
n
t
(A
)
-V , D rain-to-S ource V oltage (V )
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4 .5 V
20 s P U L S E W ID T H
T = 17 5C
C
1
1 0
1 0 0
4
5
6
7
8
9
1 0
T = 2 5C
J
T = 17 5 C
J
A
V = -2 5 V
2 0 s P U L S E W ID TH
DS
G S
-V , G ate -to-S ource V olta ge (V )
D
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , Junction T em perature (C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
ta
n
c
e
D
S
(
on)
(N
o
r
m
a
l
i
z
e
d
)
A
I = -27 A
V = -10 V
D
G S
J
J
IRF5305
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
5 0 0
1 0 0 0
1 5 0 0
2 0 0 0
2 5 0 0
1
1 0
1 0 0
C
,
C
a
p
a
c
i
t
anc
e (
p
F
)
A
V = 0V , f = 1 M H z
C = C + C , C S H O R TE D
C = C
C = C + C
G S
iss g s g d d s
rs s g d
o ss ds g d
C
is s
C
os s
C
rs s
D S
-V , D rain-to -S o urc e V oltag e (V )
0
4
8
1 2
1 6
2 0
0
1 0
2 0
3 0
4 0
5 0
6 0
Q , Total G ate C harge (nC )
G
A
F O R TE S T C IR C U IT
S E E F IG U R E 1 3
V = -4 4V
V = -2 8V
I = -1 6A
GS
-
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
D
D S
D S
1 0
1 0 0
1 0 0 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
T = 25 C
J
V = 0V
G S
S D
SD
A
-I
,
R
e
v
e
rs
e
D
r
a
i
n
C
u
rre
n
t
(A
)
-V , S o urc e-to -D ra in V o lta ge (V )
T = 17 5 C
J
1
1 0
1 0 0
1 0 0 0
1
1 0
1 0 0
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D S (o n)
1 0 0 s
1 m s
1 0 m s
A
T = 25 C
T = 17 5C
S ing le P u ls e
C
J
D S
-V , D rain-to-S ourc e V oltage (V )
D
-I
,
D
r
a
i
n
C
u
rre
n
t
(A
)
IRF5305
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5
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
-10V
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
+
-
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
T , Case Temperature ( C)
-I , Drain Current (A)
C
D
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF5305
6
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Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T.
V
DS
I
D
I
G
-3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
1 7 5
J
E
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
lanc
he E
n
er
gy
(
m
J
)
AS
A
S ta rtin g T , J u nc tio n T e m pe ra tu re (C )
V = -2 5V
I
TO P -6.6 A
-11 A
B O T T O M -1 6A
D D
D
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
A S
R
G
IA S
0 .0 1
tp
D .U .T
L
V D S
+
-
VD D
D R IV E R
A
- 2 0 V
1 5 V
IRF5305
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7
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
R
G
V
DD
dv/dt controlled by R
G
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
*
V
GS
*
**
[ ]
[ ]
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
IRF5305
8
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L E A D A S S IG NM E NT S
1 - G A T E
2 - D R A IN
3 - S O U RC E
4 - D R A IN
- B -
1 .32 (.05 2)
1 .22 (.04 8)
3 X
0.55 (.02 2)
0.46 (.01 8)
2 .92 (.11 5)
2 .64 (.10 4)
4.69 ( .18 5 )
4.20 ( .16 5 )
3X
0.93 (.03 7)
0.69 (.02 7)
4.06 (.16 0)
3.55 (.14 0)
1.15 (.04 5)
M IN
6.47 (.25 5)
6.10 (.24 0)
3 .7 8 (.149 )
3 .5 4 (.139 )
- A -
10 .54 (.4 15)
10 .29 (.4 05)
2.87 (.11 3)
2.62 (.10 3)
1 5.24 (.60 0)
1 4.84 (.58 4)
1 4.09 (.55 5)
1 3.47 (.53 0)
3 X
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
2.54 (.10 0)
2 X
0 .3 6 (.01 4) M B A M
4
1 2 3
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
2 C O N TR O L LIN G D IM E N S IO N : IN C H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
P A R T N U M B E R
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
E X A M P L E : T H IS IS A N IR F 1 0 1 0
W IT H A S S E M B L Y
L O T C O D E 9 B 1M
A S S E M B L Y
L O T C O D E
D A T E C O D E
(Y Y W W )
Y Y = Y E A R
W W = W E E K
9 2 4 6
IR F 1 0 10
9B 1 M
A
Part Marking Information
TO-220AB
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 4/99
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