IRF5305S/L
HEXFET
Power MOSFET
PD - 91386C
l
Advanced Process Technology
l
Surface Mount (IRF5305S)
l
Low-profile through-hole (IRF5305L)
l
175C Operating Temperature
l
Fast Switching
l
P-Channel
l
Fully Avalanche Rated
4/1/99
S
D
G
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF5305L) is available for low-
profile applications.
Description
V
DSS
= -55V
R
DS(on)
= 0.06
I
D
= -31A
2
D P ak
T O -26 2
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.4
R
JA
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
Thermal Resistance
C/W
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ -10V
-31
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ -10V
-22
A
I
DM
Pulsed Drain Current
-110
P
D
@T
A
= 25C
Power Dissipation
3.8
W
P
D
@T
C
= 25C
Power Dissipation
110
W
Linear Derating Factor
0.71
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
280
mJ
I
AR
Avalanche Current
-16
A
E
AR
Repetitive Avalanche Energy
11
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.8
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
IRF5305S/L
2
www.irf.com
V
DD
= -25V, Starting T
J
= 25C, L = 2.1mH
R
G
= 25
, I
AS
= -16A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
I
SD
-16A, di/dt
-280A/s, V
DD
V
(BR)DSS
,
T
J
175C
Pulse width
300s; duty cycle
2%.
Uses IRF5305 data and test conditions
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-55
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.034
V/C
Reference to 25C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.06
V
GS
= -10V, I
D
= -16A
V
GS(th)
Gate Threshold Voltage
-2.0
-4.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
8.0
S
V
DS
= -25V, I
D
= -16A
-25
A
V
DS
= -55V, V
GS
= 0V
-250
V
DS
= -44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
n A
V
GS
= -20V
Q
g
Total Gate Charge
63
I
D
= -16A
Q
gs
Gate-to-Source Charge
13
nC
V
DS
= -44V
Q
gd
Gate-to-Drain ("Miller") Charge
29
V
GS
= -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
14
V
DD
= -28V
t
r
Rise Time
66
I
D
= -16A
t
d(off)
Turn-Off Delay Time
39
R
G
= 6.8
t
f
Fall Time
63
R
D
= 1.6
,
See Fig. 10
Between lead,
and center of die contact
C
iss
Input Capacitance
1200
V
GS
= 0V
C
oss
Output Capacitance
520
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
250
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.3
V
T
J
= 25C, I
S
= -16A, V
GS
= 0V
t
rr
Reverse Recovery Time
71
110
ns
T
J
= 25C, I
F
= -16A
Q
rr
Reverse Recovery Charge
170
250
nC
di/dt = -100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
A
S
D
G
-31
-110
IRF5305S/L
www.irf.com
3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
1 0
1 0 0
1 0 0 0
0 . 1
1
1 0
1 0 0
D
D S
20 s P U L S E W ID T H
T = 25 C
c
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , D rain-to-S o urce V oltage (V )
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4 .5V
1
1 0
1 0 0
1 0 0 0
0.1
1
1 0
1 0 0
D
D S
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
r
c
e
C
u
rre
n
t
(A
)
-V , D rain-to-S ource V oltage (V )
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4 .5 V
20 s P U L S E W ID T H
T = 17 5C
C
1
1 0
1 0 0
4
5
6
7
8
9
1 0
T = 2 5C
J
T = 17 5 C
J
A
V = -2 5 V
2 0 s P U L S E W ID TH
DS
G S
-V , G ate -to-S ource V olta ge (V )
D
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , J unc tion T em perature (C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n
)
(
N
or
m
a
l
i
z
ed)
A
I = -2 7A
V = -1 0V
D
G S
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
T
J
= 25C
T
J
= 175C
IRF5305S/L
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
5 0 0
1 0 0 0
1 5 0 0
2 0 0 0
2 5 0 0
1
1 0
1 0 0
C
,
C
a
p
a
c
i
t
anc
e (
p
F
)
A
V = 0V , f = 1 M H z
C = C + C , C S H O R TE D
C = C
C = C + C
G S
iss g s g d d s
rs s g d
o ss ds g d
C
is s
C
os s
C
rs s
D S
-V , D rain-to -S o urc e V oltag e (V )
0
4
8
1 2
1 6
2 0
0
1 0
2 0
3 0
4 0
5 0
6 0
Q , T otal G ate C harge (nC )
G
A
F O R TE S T C IR C U IT
S E E F IG U R E 1 3
V = -4 4V
V = -2 8V
I = -16 A
GS
-
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
D
D S
D S
1 0
1 0 0
1 0 0 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
T = 2 5C
J
V = 0 V
G S
S D
SD
A
-I
,
R
e
v
e
rs
e
D
r
a
i
n
C
u
rre
n
t
(A
)
-V , S o urc e -to -D rain V o lta g e (V )
T = 17 5 C
J
1
1 0
1 0 0
1 0 0 0
1
1 0
1 0 0
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D S (o n)
1 0 0 s
1 m s
1 0 m s
A
T = 25 C
T = 17 5C
S ing le P u ls e
C
J
D S
-V , D rain-to-S ourc e V oltage (V )
D
-I
,
D
r
a
i
n
C
u
rre
n
t
(A
)
IRF5305S/L
www.irf.com
5
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
-10V
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
+
-
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
T , Case Temperature
( C)
-I , Drain Current (A)
C
D
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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