IRF540N
HEXFET
Power MOSFET
03/13/01
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.15
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
Thermal Resistance
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1
V
DSS
= 100V
R
DS(on)
= 44m
I
D
= 33A
S
D
G
TO-220AB
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
33
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
23
A
I
DM
Pulsed Drain Current
110
P
D
@T
C
= 25C
Power Dissipation
130
W
Linear Derating Factor
0.87
W/C
V
GS
Gate-to-Source Voltage
20
V
I
AR
Avalanche Current
16
A
E
AR
Repetitive Avalanche Energy
13
mJ
dv/dt
Peak Diode Recovery dv/dt
7.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting torque, 6-32 or M3 srew
10 lbfin (1.1Nm)
PD - 91341B
IRF540N
2
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S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.2
V
T
J
= 25C, I
S
= 16A, V
GS
= 0V
t
rr
Reverse Recovery Time
115
170
ns
T
J
= 25C, I
F
= 16A
Q
rr
Reverse Recovery Charge
505
760
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
33
110
A
Starting T
J
= 25C, L =1.5mH
R
G
= 25
, I
AS
= 16A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
I
SD
16
A, di/dt
340A/s, V
DD
V
(BR)DSS
,
T
J
175C
Pulse width
400s; duty cycle
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175C .
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
100
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.12
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
44
m
V
GS
= 10V, I
D
= 16A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
21
S
V
DS
= 50V, I
D
= 16A
25
A
V
DS
= 100V, V
GS
= 0V
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
71
I
D
= 16A
Q
gs
Gate-to-Source Charge
14
nC
V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge
21
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
11
V
DD
= 50V
t
r
Rise Time
35
I
D
= 16A
t
d(off)
Turn-Off Delay Time
39
R
G
= 5.1
t
f
Fall Time
35
V
GS
= 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
1960
V
GS
= 0V
C
oss
Output Capacitance
250
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
40
pF
= 1.0MHz, See Fig. 5
E
AS
Single Pulse Avalanche Energy
700
185
mJ
I
AS
= 16A, L = 1.5mH
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
IRF540N
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20
0
20
40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
33A
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 175 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
4.0
5.0
6.0
7.0
8.0
9.0
V = 50V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 175 C
J
IRF540N
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
500
1000
1500
2000
2500
3000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
20
40
60
80
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
16A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
1.8
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 175 C
J
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
I D
, Drain-to-Source Current (A)
TA = 25C
TJ = 175C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100sec
IRF540N
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
T , Case Temperature
( C)
I , Drain Current (A)
C
D
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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