HEXFET
Power MOSFET
PD - 9.1095B
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Adavanced Process Technology
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Ultra Low On-Resistance
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Dual N-Channel MOSFET
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Surface Mount
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Available in Tape & Reel
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Dynamic dv/dt Rating
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Fast Switching
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
IRF7103
S O -8
D1
D 1
D2
D 2
G 1
S 2
G 2
S 1
Top V iew
8
1
2
3
4
5
6
7
V
DSS
= 50V
R
DS(on)
= 0.130
I
D
= 3.0A
8/25/97
Parameter Min. Typ. Max. Units
R
JA
Maximum Junction-to-Ambient
62.5 C/W
Parameter
Max.
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V
3.0
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V
2.3
I
DM
Pulsed Drain Current
10
P
D
@T
C
= 25C
Power Dissipation
2.0
Linear Derating Factor
0.016
W/C
V
GS
Gate-to-Source Voltage
20
V
dv/dt
Peak Diode Recovery dv/dt
4.5
V/nS
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
Absolute Maximum Ratings
A
Thermal Resistance Ratings
W
C
IRF7103
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
50
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.049
V/C
Reference to 25C, I
D
= 1mA
0.11 0.13
V
GS
= 10V, I
D
= 3.0A
0.16 0.20
V
GS
= 4.5V, I
D
= 1.5A
V
GS(th)
Gate Threshold Voltage
1.0
3.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
3.8
S
V
DS
= 15V, I
D
= 3.0A
2.0
V
DS
= 40V, V
GS
= 0V
25
V
DS
= 40V, V
GS
= 0V, T
J
= 55 C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
V
GS
= - 20V
Q
g
Total Gate Charge
12
30
I
D
= 2.0A
Q
gs
Gate-to-Source Charge
1.2
nC
V
DS
= 25V
Q
gd
Gate-to-Drain ("Miller") Charge
3.5
V
GS
= 10V
t
d(on)
Turn-On Delay Time
9.0
20
V
DD
= 25V
t
r
Rise Time
8.0
20
I
D
= 1.0A
t
d(off)
Turn-Off Delay Time
45
70
R
G
= 6.0
t
f
Fall Time
25
50
R
D
= 25
Between lead,6mm(0.25in.)
from package and center
of die contact
C
iss
Input Capacitance
290
V
GS
= 0V
C
oss
Output Capacitance
140
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
37
= 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.2
V
T
J
= 25C, I
S
= 1.5A, V
GS
= 0V
t
rr
Reverse Recovery Time
70
100
ns
T
J
= 25C, I
F
= 1.5A
Q
rr
Reverse RecoveryCharge
110
170
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
12
2.0
A
S
D
G
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
6.0
L
D
Internal Drain Inductance
4.0
nH
ns
nA
A
R
DS(ON)
Static Drain-to-Source On-Resistance
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
1.8A, di/dt
90A/s, V
DD
V
(BR)DSS
,
T
J
150C
Pulse width
300s; duty cycle
2%.
Surface mounted on FR-4 board, t
10sec.
IRF7103
IRF7103
C,
IRF7103
Fig 10a. Switching Time Test Circuit
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
10V
Pulse Width
1
s
Duty Factor
0.1 %
Fig 10b. Switching Time Waveforms
R
D
V
GS
V
DD
R
G
D.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7103
Fig 12a. Basic Gate Charge Waveform
Fig 12b. Gate Charge Test Circuit
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
10V
IRF7103
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 13. For N-Channel HEXFETS
*
VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
IRF7103
Package Outline
SO8 Outline
SO8
Part Marking Information
E X A M P L E : TH IS IS A N IR F 7 101
D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W E E K
W A F E R
L O T C O D E
(L A S T 4 D IG IT S )
XX X X
B O T TO M
P A R T N U M B E R
T OP
IN T E R N A TI ON A L
R E C T IF IE R
L O G O
F 7 1 01
3 12
K x 4 5
C
8 X
L
8 X
H
0.25 (.010) M A M
A
0 . 1 0 ( . 0 0 4 )
B 8 X
0.25 (.010) M C A S B S
- C -
6 X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
R E C O M M E N D E D F O O T P R I N T
0 . 7 2 ( . 0 2 8 )
8 X
1 . 7 8 ( . 0 7 0 )
8X
6 . 4 6 ( . 2 5 5 )
1 . 2 7 ( . 0 5 0 )
3X
DIM
INCHES MILLIMETERS
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A 1 . 0 0 4 0 . 0 0 9 8 0 . 1 0 0 . 2 5
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
0 8 0 8
N O T E S :
1 . D I M E N S I O N I N G A N D T O L E R A N C I N G P E R A N S I Y 1 4 . 5 M - 1 9 8 2 .
2 . C O N T R O L L I N G D I M E N S I O N : I N C H .
3 . D I M E N S I O N S A R E S H O W N I N M I L L I M E T E R S ( I N C H E S ) .
4 . O U T L I N E C O N F O R M S T O J E D E C O U T L I N E M S - 0 1 2 A A .
D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S
M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 2 5 ( . 0 0 6 ) .
D I M E N S I O N S I S T H E L E N G T H O F L E A D F O R S O L D E R I N G T O A S U B S T R A T E . .
5
6
A 1
e 1
IRF7103
SO8
Dimensions are shown in millimeters (inches)
Tape & Reel Information
33 0. 00
(12 .99 2)
M A X.
1 4. 40 ( .5 66 )
1 2. 40 ( .4 88 )
N O T ES :
1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER .
2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1.
F E ED D IR E C T IO N
T ER M IN A L N U M B E R 1
12 .3 ( .48 4 )
11 .7 ( .46 1 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
N O T E S:
1 . CO N T RO LL IN G D IM E N SIO N : M ILLIM E T E R.
2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E T ER S (INC HE S ).
3 . O UT L IN E C O NF O RM S T O E IA - 48 1 & E IA -5 41 .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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