Parameter
Max.
Units
V
DS
Drain- Source Voltage
30
V
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
7.3
I
D
@ T
C
= 70C
Continuous Drain Current, V
GS
@ 10V
5.8
A
I
DM
Pulsed Drain Current
58
P
D
@T
C
= 25C
Power Dissipation
2.5
P
D
@T
C
= 70C
Power Dissipation
1.6
Linear Derating Factor
0.02
W/C
V
GS
Gate-to-Source Voltage
20
V
V
GSM
Gate-to-Source Voltage Single Pulse tp<10s
30
V
E
AS
Single Pulse Avalanche Energy
70
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
HEXFET
Power MOSFET
Fifth Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
V
DSS
= 30V
R
DS(on)
= 0.030
l
Generation V Technology
l
Ultra Low On-Resistance
l
N-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
IRF7201
Description
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
08/15/03
Parameter
Typ.
Max.
Units
R
JA
Maximum Junction-to-Ambient
50
C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com
1
SO-8
PD- 91100D
IRF7201
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.024
V/C Reference to 25C, I
D
= 1mA
0.030
V
GS
= 10V, I
D
= 7.3A
0.050
V
GS
= 4.5V, I
D
= 3.7A
V
GS(th)
Gate Threshold Voltage
1.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
5.8
S
V
DS
= 15V, I
D
= 2.3A
1.0
V
DS
= 24V, V
GS
= 0V
25
V
DS
= 24V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
-100
V
GS
= -20V
Gate-to-Source Reverse Leakage
100
V
GS
= 20V
Q
g
Total Gate Charge
19
28
I
D
= 4.6A
Q
gs
Gate-to-Source Charge
2.3
3.5
nC
V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge
6.3
9.5
V
GS
= 10V, See Fig. 10
t
d(on)
Turn-On Delay Time
7.0
V
DD
= 15V
t
r
Rise Time
35
I
D
= 4.6A
t
d(off)
Turn-Off Delay Time
21
R
G
= 6.2
t
f
Fall Time
19
R
D
= 3.2
,
C
iss
Input Capacitance
550
V
GS
= 0V
C
oss
Output Capacitance
260
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
100
= 1.0MHz, See Fig. 9
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.2
V
T
J
= 25C, I
S
= 4.6A, V
GS
= 0V
t
rr
Reverse Recovery Time
48
73
ns
T
J
= 25C, I
F
= 4.6A
Q
rr
Reverse RecoveryCharge
73
110
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
58
2.5
A
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
I
SD
4.6A, di/dt
120A/s, V
DD
V
(BR)DSS
,
T
J
150C
Notes:
V
DD
= 15V, starting T
J
= 25C, L = 6.6mH
R
G
= 25
, I
AS
= 4.6A. (See Figure 8)
Pulse width
300s; duty cycle
2%
.
When mounted on 1 inch square copper board, t<10 sec
IRF7201
www.irf.com
3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1
10
100
0.1
1
10
20s PULSE WIDTH
T = 25C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
DI
,
D
r
ai
n-
t
o
-
S
o
u
r
c
e
C
u
r
r
ent
(
A
)
1
10
100
0.1
1
10
A
DS
V , Drain-to-Source Voltage (V)
DI ,
D
r
a
i
n-
t
o
-
S
our
ce C
u
r
r
en
t
(
A
)
20s PULSE WIDTH
T = 150C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
10
100
3.0
3.5
4.0
4.5
5.0
5.5
T = 25C
T = 150C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I
, Dra
i
n
-
to
-
S
o
u
rc
e
C
u
rre
n
t
(A)
A
V = 10V
20s PULSE WIDTH
DS
Fig 4. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
T = 25C
T = 150C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , R
e
v
e
rs
e
D
r
a
i
n
C
u
rre
n
t
(A
)
SD
SD
A
IRF7201
4
www.irf.com
Fig 5. Normalized On-Resistance
Vs. Temperature
0.0
0.5
1.0
1.5
2.0
-60 -40
-20
0
20
40
60
80
100 120 140 160
J
T , Junction Temperature (C)
R
, D
r
a
i
n
-
to
-
S
o
u
rc
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
on)
(N
o
r
m
a
l
i
ze
d)
V = 10V
GS
A
I = 4.6A
D
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
0
40
80
120
160
200
25
50
75
100
125
150
J
E
,
S
i
ngl
e P
u
l
s
e A
v
al
anche E
nergy (m
J)
AS
A
Starting T , Junction Temperature (C)
I
TOP 2.1A
3.7A
BOTTOM 4.6A
D
Fig 6. On-Resistance Vs. Drain Current
Fig 7. On-Resistance Vs. Gate Voltage
0.02
0.03
0.04
0.05
2
4
6
8
10
12
14
16
A
R
, D
r
a
i
n
-
to
-S
o
u
rc
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
on)
(
)
GS
V , Gate-to-Source Voltage (V)
I = 7.3A
D
0.00
0.05
0.10
0.15
0.20
0
10
20
30
40
A
I , Drain Current (A)
D
(
)
V = 10V
GS
V = 4.5V
GS
DS
(
o
n)
R
, D
r
a
i
n
-
to
-
S
o
u
rc
e
O
n
R
e
s
i
s
t
a
n
c
e
IRF7201
www.irf.com
5
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0
200
400
600
800
1000
1
10
100
C
,
Ca
pa
c
i
t
a
n
c
e (
p
F)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0
5
10
15
20
25
30
Q , Total Gate Charge (nC)
G
V
, G
a
te
-to
-
S
o
u
r
c
e
V
o
lta
g
e
(V
)
GS
A
V = 24V
V = 15V
DS
DS
I = 4.6A
D
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Ther
m
a
l
R
e
sponse
(Z
)
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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