HEXFET
Power MOSFET
PD - 9.1104B
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Adavanced Process Technology
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Ultra Low On-Resistance
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P-Channel MOSFET
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Surface Mount
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Available in Tape & Reel
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Dynamic dv/dt Rating
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Fast Switching
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
IRF7205
S O -8
V
DSS
= -30V
R
DS(on)
= 0.070
I
D
= -4.6A
8/25/97
T o p View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
Parameter Min. Typ. Max. Units
R
JA
Maximum Junction-to-Ambient
50 C/W
Parameter
Max.
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V
-4.6
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V
-3.7
I
DM
Pulsed Drain Current
-15
P
D
@T
C
= 25C
Power Dissipation
2.5
Linear Derating Factor
0.020
W/C
V
GS
Gate-to-Source Voltage
20
V
dv/dt
Peak Diode Recovery dv/dt
-3.0
V/nS
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
Absolute Maximum Ratings
A
Thermal Resistance Ratings
W
C
IRF7205
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-30
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.024
V/C
Reference to 25C, I
D
= -1mA
0.070
V
GS
= -10V, I
D
= -4.6A
0.130
V
GS
= -4.5V, I
D
= -2.0A
V
GS(th)
Gate Threshold Voltage
-1.0
-3.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
6.6
S
V
DS
= -15V, I
D
= -4.6A
-1.0
V
DS
= -24V, V
GS
= 0V
-5.0
V
DS
= -15V, V
GS
= 0V, T
J
= 70 C
Gate-to-Source Forward Leakage
-100
V
GS
= -20V
Gate-to-Source Reverse Leakage
100
V
GS
= 20V
Q
g
Total Gate Charge
27
40
I
D
= -4.6A
Q
gs
Gate-to-Source Charge
5.2
nC
V
DS
= -15V
Q
gd
Gate-to-Drain ("Miller") Charge
7.5
V
GS
= -10V
t
d(on)
Turn-On Delay Time
14
30
V
DD
= -15V
t
r
Rise Time
21
60
I
D
= -1.0A
t
d(off)
Turn-Off Delay Time
97
150
R
G
= 6.0
t
f
Fall Time
71
100
R
D
= 10
Between lead,6mm(0.25in.)
from package and center
of die contact
C
iss
Input Capacitance
870
V
GS
= 0V
C
oss
Output Capacitance
720
pF
V
DS
= -10V
C
rss
Reverse Transfer Capacitance
220
= 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.2
V
T
J
= 25C, I
S
= -1.25A, V
GS
= 0V
t
rr
Reverse Recovery Time
70
100
ns
T
J
= 25C, I
F
= -4.6A
Q
rr
Reverse RecoveryCharge
100
180
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
-15
-2.5
A
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
4.0
L
D
Internal Drain Inductance
2.5
nH
ns
nA
A
R
DS(ON)
Static Drain-to-Source On-Resistance
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
-4.6A, di/dt
90A/s, V
DD
V
(BR)DSS
,
T
J
150C
Pulse width
300s; duty cycle
2%.
Surface mounted on FR-4 board, t
10sec.
S
D
G
S
D
G
IRF7205
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
DS
-10V
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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