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Parameter
Max.
Units
V
DS
Drain- Source Voltage
-14
V
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -4.5V
11
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ -4.5V
8.8
A
I
DM
Pulsed Drain Current
88
P
D
@T
A
= 25C
Power Dissipation
2.5
P
D
@T
A
= 70C
Power Dissipation
1.6
Linear Derating Factor
0.02
W/C
E
AS
Single Pulse Avalanche Energy
110
mJ
V
GS
Gate-to-Source Voltage
12
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
03/15/99
IRF7220
HEXFET
Power MOSFET
Parameter
Max.
Units
R
q
JA
Maximum Junction-to-Ambient
50
C/W
Thermal Resistance
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques.
S O -8
V
DSS
= -14V
R
DS(on)
= 0.012
W
Description
Absolute Maximum Ratings
W
www.irf.com
1
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
T o p V ie w
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
PD- 91850B
IRF7220
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width
300s; duty cycle
2%.
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.2
V
T
J
= 25C, I
S
= -2.5A, V
GS
= 0V
t
rr
Reverse Recovery Time
160
240
ns
T
J
= 25C, I
F
= -2.5A
Q
rr
Reverse RecoveryCharge
147
220
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
-88
-2.5
A
When mounted on 1 inch square copper board, t<10 sec
S
D
G
Starting T
J
= 25C, L = 1.8mH
R
G
= 25
W
, I
AS
= 11A. (See Figure 10)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-14
V
V
GS
= 0V, I
D
= -5mA
D
V
(BR)DSS
/
D
T
J
Breakdown Voltage Temp. Coefficient
-0.006
V/C
Reference to 25C, I
D
= -1mA
.0082 0.012
V
GS
= -4.5V, I
D
= -11A
.0125 0.020
V
GS
= -2.5V, I
D
= -8.8A
V
GS(th)
Gate Threshold Voltage
-0.60
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
8.4
S
V
DS
= -10V, I
D
= -11A
-5.0
V
DS
= -11.2V, V
GS
= 0V
-100
V
DS
= -11.2V, V
GS
= 0V, T
J
= 70C
Gate-to-Source Forward Leakage
-100
V
GS
= -12V
Gate-to-Source Reverse Leakage
100
V
GS
= 12V
Q
g
Total Gate Charge
84
125
I
D
= -11A
Q
gs
Gate-to-Source Charge
13
20
nC
V
DS
= -10V
Q
gd
Gate-to-Drain ("Miller") Charge
37
55
V
GS
= -5.0V
t
d(on)
Turn-On Delay Time
19
V
DD
= -10V
t
r
Rise Time
420
I
D
= -11A
t
d(off)
Turn-Off Delay Time
140
R
G
= 0.90
W
t
f
Fall Time
1040
R
D
= 6.2
W
C
iss
Input Capacitance
8075
V
GS
= 0V
C
oss
Output Capacitance
4400
pF
V
DS
= -10V
C
rss
Reverse Transfer Capacitance
4150
= 1.0MHz
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
W
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
IRF7220
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
-4.5V
-11A
0
2 0
4 0
6 0
8 0
0
2
4
6
8
1 0
D
D S
A
-
I
,
D
r
a
i
n
-
t
o
-
S
ou
r
c
e
C
u
r
r
en
t (
A
)
-V , D ra in-to -S o urc e Volta ge (V)
-1.2V
300s P U LS E W ID TH
T = 25C
V G S
TO P - 4 .5V
- 4.0 V
- 3.0 V
- 2.0 V
- 1.8 V
- 1.6 V
- 1.4 V
BO TTO M - 1.2 V
J
0
1 0
2 0
3 0
4 0
5 0
6 0
0
2
4
6
8
1 0
D
D S
A
-
I
,
D
r
ai
n
-
t
o
-
S
ou
r
c
e Cu
r
r
en
t
(
A
)
-V , D ra in -to -S o u rc e V o lta g e ( V )
300s PULSE W ID TH
T = 150C
-1.2V
V G S
T O P - 4.5 V
- 4 .0V
- 3 .0V
- 2 .0V
- 1 .8V
- 1 .6V
- 1 .4V
B O TTO M - 1 .2V
J
1
1 0
1 0 0
1 0 0 0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
T = 25C
T = 150C
J
J
G S
D
A
-
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t (
A
)
-V , G a te -to -S ou rce V o lta ge (V )
V = -10V
20 s P U LS E W ID TH
D S
IRF7220
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
20
40
60
80
100
120
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-11A
V
=-10V
DS
1
10
100
1000
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
4000
5000
6000
7000
8000
9000
10 00 0
1
1 0
C
,
C
a
pa
ci
tan
c
e
(
p
F
)
A
D S
-V , D ra in-to-S o urc e Vo ltag e (V)
C
iss
C
oss
C
rss
G S
iss g s g d d s
rss g d
o ss d s g d
V = 0V, f = 1kHz
C = C + C , C SH ORTE D
C = C
C = C + C
0.1
1
1 0
1 0 0
0.0
0.5
1.0
1.5
2.0
2.5
T = 25C
T = 150C
J
J
V = 0V
G S
S D
SD
A
-
I
,
R
e
v
e
r
s
e
D
r
ai
n C
u
r
r
en
t
(A
)
-V , S ou rce -to-D ra in V oltage (V )
IRF7220
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0
2
4
6
8
10
12
T , Case Temperature ( C)
-I , Drain Current (A)
C
D
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25
50
75
100
125
150
0
50
100
150
200
250
300
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
ID
TOP
BOTTOM
-4.9A
-8.8A
-11A
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