HEXFET
Power MOSFET
PD - 9.1241C
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual P-Channel Mosfet
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
IRF7306
S O -8
V
DSS
= -30V
R
DS(on)
= 0.10
Parameter
Max.
Units
I
D
@ T
A
= 25C
10 Sec. Pulsed Drain Current, V
GS
@ -10V
-4.0
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -10V
-3.6
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ -10V
-2.9
I
DM
Pulsed Drain Current
-14
P
D
@T
A
= 25C
Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/C
V
GS
Gate-to-Source Voltage
20
V
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
Absolute Maximum Ratings
A
D1
D1
D2
D2
G 1
S 2
G 2
S 1
T o p V ie w
8
1
2
3
4
5
6
7
8/25/97
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
R
JA
Maximum Junction-to-Ambient
62.5
C/W
IRF7306
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-30
V
V
GS
= 0V, ID = -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.037
V/C
Reference to 25C, I
D
= -1mA
0.10
V
GS
= -10V, I
D
= -1.8A
0.16
V
GS
= -4.5V, I
D
= -1.5A
V
GS(th)
Gate Threshold Voltage
-1.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
2.5
S
V
DS
= -24V, I
D
= -1.8A
-1.0
V
DS
= -24V, V
GS
= 0V
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
-100
V
GS
= -20V
Gate-to-Source Reverse Leakage
100
V
GS
= 20V
Q
g
Total Gate Charge
25
I
D
= -1.8A
Q
gs
Gate-to-Source Charge
2.9
nC
V
DS
= -24V
Q
gd
Gate-to-Drain ("Miller") Charge
9.0
V
GS
= -10V, See Fig. 6 and 12
t
d(on)
Turn-On Delay Time
11
V
DD
= -15V
t
r
Rise Time
17
I
D
= -1.8A
t
d(off)
Turn-Off Delay Time
25
R
G
= 6.0
t
f
Fall Time
18
R
D
= 8.2
,
See Fig. 10
Between lead tip
and center of die contact
C
iss
Input Capacitance
440
V
GS
= 0V
C
oss
Output Capacitance
200
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
93
= 1.0MHz, See Fig. 5
Notes:
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.0
V
T
J
= 25C, I
S
= -1.8A, V
GS
= 0V
t
rr
Reverse Recovery Time
53
80
ns
T
J
= 25C, I
F
= -1.8A
Q
rr
Reverse RecoveryCharge
66
99
C
di/dt = 100A/s
t
on
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
-1.8A, di/dt
90A/s, V
DD
V
(BR)DSS
,
T
J
150C
Pulse width
300s; duty cycle
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
-14
-2.5
A
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
6.0
L
D
Internal Drain Inductance
4.0
nH
ns
nA
A
R
DS(ON)
Static Drain-to-Source On-Resistance
S
D
G
S
D
G
Surface mounted on FR-4 board, t
10sec.
IRF7306
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1
1 0
1 0 0
0 . 1
1
1 0
1 0 0
D
D S
A
-
I
,
D
r
a
i
n-
t
o
-
S
ou
r
c
e C
u
r
r
e
n
t
(
A
)
-V , Drain -to -So urce Vo ltag e (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
-4 .5V
20 s P U LSE W I DTH
T = 25 C
J
1
10
100
0.1
1
10
100
D
D S
2 0 s PU L SE W ID TH
T = 1 50 C
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
r
c
e
C
u
rre
n
t
(A
)
-V , Dra in-to-So urce V oltag e (V )
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4.5V
-4.5 V
J
1
1 0
1 0 0
4
5
6
7
8
9
1 0
T = 2 5 C
T = 1 5 0 C
J
J
G S
D
A
-
I
,
D
r
a
i
n-
t
o
-
S
ou
r
c
e C
u
r
r
ent
(
A
)
-V , G a te -to -S o u rce V o lta g e ( V )
V = - 15 V
2 0 s P U L S E W ID TH
D S
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0
1 4 0
1 6 0
J
T , Jun ctio n T emp e ra ture (C)
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
on)
(
N
o
r
ma
l
i
ze
d
)
A
V = -10V
G S
I = -3 .0A
D
IRF7306
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
200
400
600
800
1000
1
10
100
C
,
C
a
pac
i
t
an
c
e
(
p
F
)
A
D S
-V , Drain -to -S o urce V oltag e (V )
V = 0 V, f = 1MH z
C = C + C , C SH O R TED
C = C
C = C + C
G S
iss g s gd ds
rs s gd
os s ds g d
C
iss
C
o ss
C
rs s
0
4
8
12
16
20
0
5
10
15
20
25
Q , To ta l Ga te Ch arge (n C)
G
A
-
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
I = -3.0 A
V = -24 V
DS
D
FOR TE ST C IR C U IT
S EE FIG U R E 12
0 . 1
1
1 0
1 0 0
0 . 0
0 . 3
0 . 6
0 . 9
1 . 2
1 . 5
T = 25C
T = 1 50 C
J
J
V = 0 V
G S
S D
SD
A
-
I
, R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t (
A
)
-V , So urce-to -D ra in V olta ge (V)
1
10
100
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
IRF7306
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
-10 V
Pulse Width
1
s
Duty Factor
0.1 %
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10b. Switching Time Waveforms
R
D
V
GS
V
DD
R
G
D.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
+
-
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
T , Case Temperature
( C)
-I , Drain Current (A)
C
D
IRF7306
Fig 12a. Basic Gate Charge Waveform
Fig 12b. Gate Charge Test Circuit
Q
G
Q
GS
Q
GD
V
G
Charge
-10 V
D.U.T.
V
DS
I
D
I
G
-3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
IRF7306
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
R
G
V
DD
dv/dt controlled by R
G
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
*
V
GS
*
**
Peak Diode Recovery dv/dt Test Circuit
[ ]
[ ]
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 13. For P-Channel HEXFETS
IRF7306
Package Outline
SO-8 Outline
Dimensions are shown in millimeters (inches)
SO-8
Part Marking Information
E X A M P L E : T H IS IS A N IR F 710 1
D A TE C O DE (Y W W )
Y = L A S T D IG IT O F T H E Y E A R
W W = W E E K
W A F E R
LO T C O D E
(L A S T 4 D IG IT S )
XX X X
B O T TO M
P A R T N UM B E R
T O P
IN T E R N A T IO N A L
R E C T IF I E R
L O G O
F 7 1 01
312
K x 4 5
C
8 X
L
8 X
H
0.25 (.010) M A M
A
0 . 1 0 ( . 0 0 4 )
B 8 X
0.25 (.010) M C A S B S
- C -
6 X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
R E C O M M E N D E D F O O T P R I N T
0 . 7 2 ( . 0 2 8 )
8 X
1 . 7 8 ( . 0 7 0 )
8X
6 . 4 6 ( . 2 5 5 )
1 . 2 7 ( . 0 5 0 )
3X
DIM
INCHES MILLIMETERS
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A 1 . 0 0 4 0 . 0 0 9 8 0 . 1 0 0 . 2 5
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
0 8 0 8
N O T E S :
1 . D I M E N S I O N I N G A N D T O L E R A N C I N G P E R A N S I Y 1 4 . 5 M - 1 9 8 2 .
2 . C O N T R O L L I N G D I M E N S I O N : I N C H .
3 . D I M E N S I O N S A R E S H O W N I N M I L L I M E T E R S ( I N C H E S ) .
4 . O U T L I N E C O N F O R M S T O J E D E C O U T L I N E M S - 0 1 2 A A .
D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S
M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 2 5 ( . 0 0 6 ) .
D I M E N S I O N S I S T H E L E N G T H O F L E A D F O R S O L D E R I N G T O A S U B S T R A T E . .
5
6
A 1
e 1
IRF7306
Tape & Reel Information
SO-8
Dimensions are shown in millimeters (inches)
4.10 ( .161 )
3.90 ( .154 )
1.60 (.062)
1.50 (.059)
1.85 (.072)
1.65 (.065)
5.30 ( .208)
5.10 ( .201)
5.55 (.218)
5.45 (.215)
2.60 (.102)
1.50 (.059)
6.50 (.255)
6.30 (.248)
8.10 (.318)
7.90 (.311)
F E ED D IRE CT IO N
T ERM IN AT IO N
N UM BE R 1
2 .05 (.080)
1 .95 (.077)
0.35 (.013)
0.25 (.010)
1 2.30 (.484)
1 1.70 (.461)
2.20 ( .08 6)
2.00 ( .07 9)
15.40 (.607)
11.90 (.469)
2
50.00
( 1.96 9)
M IN.
18.4 0 ( .7 24)
M AX 3
14.40 (.5 66)
12.40 (.4 48)
3
33 0.00
( 13.000)
M AX .
13.20 (.519)
12.80 (.504)
N O T ES :
1 CO N F O RM S T O EIA -48 1-1
2 INC LUD ES F LA NG E D IST O RT IO N @ O U T ER E DG E
3 DIM E NS IO NS M E AS URE D @ HUB
4 CO N T RO LLING DIM E NSIO N : M ET R IC
1
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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