Parameter
Max.
Units
N-Channel
P-Channel
I
D
@ T
A
= 25C
10 Sec. Pulse Drain Current, V
GS
@ 10V
4.7
-3.5
A
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V
4.0
-3.0
A
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V
3.2
-2.4
A
I
DM
Pulsed Drain Current
16
-12
A
P
D
@T
A
= 25C
Power Dissipation (PCB Mount)**
1.4
W
Linear Derating Factor (PCB Mount)**
0.011
W/C
V
GS
Gate-to-Source Voltage
20
V
dv/dt
Peak Diode Recovery dv/dt
6.9
-6.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
IRF7309
HEXFET
Power MOSFET
PD - 9.1243B
Description
PRELIMINARY
Absolute Maximum Ratings
SO-8
Thermal Resistance
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Parameter
Min.
Typ.
Max.
Units
R
JA
Junction-to-Amb. (PCB Mount, steady state)**
90
C/W
D1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design for
which HEXFET Power MOSFETs are well known, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
N-Ch
P-Ch
V
DSS
30V
-30V
R
DS(on)
0.050
0.10
147
148
IRF7309
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
V/C
V
S
A
nC
ns
nH
pF
N-Channel
I
D
= 2.6A, V
DS
= 16V, V
GS
= 4.5V
P-Channel
I
D
= -2.2A, V
DS
= -16V, V
GS
= -4.5V
N-Channel
V
DD
= 10V, I
D
= 2.6A, R
G
= 6.0
,
R
D
= 3.8
P-Channel
V
DD
= -10V, I
D
= -2.2A, R
G
= 6.0
,
R
D
= 4.5
N-Channel
V
GS
= 0V, V
DS
= 15V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V, = 1.0MHz
N-Ch
P-Ch
Source-Drain Ratings and Characteristics
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
N-Channel
T
J
= 25C, I
F
= 2.6A, di/dt = 100A/s
P-Channel
T
J
= 25C, I
F
= -2.2A, di/dt = 100A/s
Intrinsic turn-on time is neglegible (turn-on is dominated by L
S
+L
D
)
Parameter
Min. Typ. Max. Units
Conditions
N-Ch 30
--
--
V
GS
= 0V, I
D
= 250A
P-Ch -30
--
--
V
GS
= 0V, I
D
= -250A
N-Ch -- 0.032 --
Reference to 25C, I
D
= 1mA
P-Ch -- -0.037 --
Reference to 25C, I
D
= -1mA
--
-- 0.050
V
GS
= 10V, I
D
= 2.4A
--
-- 0.080
V
GS
= 4.5V, I
D
= 2.0A
--
-- 0.10
V
GS
= -10V, I
D
= -1.8A
--
-- 0.16
V
GS
= -4.5V, I
D
= -1.5A
N-Ch 1.0
--
--
V
DS
= V
GS
, I
D
= 250A
P-Ch -1.0
--
--
V
DS
= V
GS
, I
D
= -250A
N-Ch 5.2
--
--
V
DS
= 15V, I
D
= 2.4A
P-Ch 2.5
--
--
V
DS
= -24V, I
D
= -1.8A
N-Ch --
--
1.0
V
DS
= 24V, V
GS
= 0V
P-Ch --
--
-1.0
V
DS
= -24V, V
GS
= 0V
N-Ch --
--
25
V
DS
= 24V, V
GS
= 0V, T
J
= 125C
P-Ch --
--
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 125C
I
GSS
Gate-to-Source Forward Leakage
N-P
-- 100
V
GS
= 20V
N-Ch --
--
25
P-Ch --
--
25
N-Ch --
--
2.9
P-Ch --
--
2.9
N-Ch --
--
7.9
P-Ch --
--
9.0
N-Ch --
6.8
--
P-Ch --
11
--
N-Ch --
21
--
P-Ch --
17
--
N-Ch --
22
--
P-Ch --
25
--
N-Ch --
7.7
--
P-Ch --
18
--
L
D
Internal Drain Inductace
N-P
--
4.0
--
Between lead tip
L
S
Internal Source Inductance
N-P
--
6.0
--
and center of die contact
N-Ch --
520
--
P-Ch --
440
--
N-Ch --
180
--
P-Ch --
200
--
N-Ch --
72
--
P-Ch --
93
--
Parameter
Min. Typ. Max. Units
Conditions
N-Ch --
--
1.8
P-Ch --
--
-1.8
N-Ch --
--
16
P-Ch --
--
-12
N-Ch --
--
1.0
T
J
= 25C, I
S
= 1.8A, V
GS
= 0V
P-Ch --
--
-1.0
T
J
= 25C, I
S
= -1.8A, V
GS
= 0V
N-Ch --
47
71
P-Ch --
53
80
N-Ch --
56
84
P-Ch --
66
99
t
on
Forward Turn-On Time
N-P
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 )
N-Channel I
SD
2.4A, di/dt
73A/s, V
DD
V
(BR)DSS
, T
J
150C
P-Channel I
SD
-1.8A, di/dt
90A/s, V
DD
V
(BR)DSS
, T
J
150C
Pulse width
300s; duty cycle
2%.
149
IRF7309
Fig 2. Typical Output Characteristics,
T
J
= 150
o
C
Fig 1. Typical Output Characteristics,
T
J
= 25
o
C
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
N-Channel
1
10
100
1000
0.1
1
10
100
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20s PULSE WIDTH
T = 25C
A
4.5V
J
1
10
100
1000
0.1
1
10
100
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20s PULSE WIDTH
T = 150C
A
4.5V
J
10
100
4
5
6
7
8
9
10
T = 25C
T = 150C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
A
V = 15V
20s PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
J
T , Junction Temperature (C)
R
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
o
n
)
(
N
o
r
m
a
l
i
z
e
d
)
V = 10V
GS
A
I = 4.0A
D
150
IRF7309
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs. Drain-to-
Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
N-Channel
0
200
400
600
800
1000
1
10
100
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0
5
10
15
20
25
Q , Total Gate Charge (nC)
G
V
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
G
S
A
I = 2.4A
V = 24V
D
DS
FOR TEST CIRCUIT
SEE FIGURE 11
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
T = 25C
T = 150C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
SD
S
D
A
0.1
1
10
100
0.1
1
10
100
V , Drain-to-Source Voltage (V)
DS
I
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T = 25C
T = 150C
Single Pulse
100s
1ms
10ms
100ms
A
A
J
151
IRF7309
Fig 12. Typical Output Characteristics, T
J
= 25
o
C
Fig 13. Typical Output Characteristics,T
J
= 150
o
C
N-Channel
P-Channel
Fig 9. Max. Drain Current Vs. Ambient Temp.
Fig 11a. Gate Charge Test Circuit
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11b. Basic Gate Charge Waveform
0.0
1.0
2.0
3.0
4.0
25
50
75
100
125
150
I
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
m
p
s
)
D
A
T , Ambient Temperature (C)
A
1
10
100
0.1
1
10
100
D
DS
A
-
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
20s PULSE WIDTH
T = 25C
J
1
10
100
0.1
1
10
100
D
DS
20s PULSE WIDTH
T = 150C
A
-
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
J
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