5/8/00
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1
IRF730A
TO-220AB
SMPS MOSFET
HEXFET
Power MOSFET
l
Switch Mode Power Supply (SMPS)
l
Uninterruptable Power Supply
l
High speed power switching
Benefits
Applications
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
V
DSS
Rds(on) max
I
D
400V
1.0
5.5A
S
D
G
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
5.5
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
3.5
A
I
DM
Pulsed Drain Current
22
P
D
@T
C
= 25C
Power Dissipation
74
W
Linear Derating Factor
0.6
W/C
V
GS
Gate-to-Source Voltage
30
V
dv/dt
Peak Diode Recovery dv/dt
4.6
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm)
Absolute Maximum Ratings
l
Effective Coss Specified (See AN1001)
PD - 91902A
Typical SMPS Topologies:
l
Single Transistor Flyback Xfmr. Reset
l
Single Transistor Forward Xfmr. Reset
(Both US Line input only).
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Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
3.1
S
V
DS
= 50V, I
D
= 3.3A
Q
g
Total Gate Charge
22 I
D
= 3.5A
Q
gs
Gate-to-Source Charge
5.8
nC
V
DS
= 320V
Q
gd
Gate-to-Drain ("Miller") Charge
9.3
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
10
V
DD
= 200V
t
r
Rise Time
22
I
D
= 3.5A
t
d(off)
Turn-Off Delay Time
20
R
G
= 12
t
f
Fall Time
16
R
D
= 57
,See Fig. 10
C
iss
Input Capacitance
600
V
GS
= 0V
C
oss
Output Capacitance
103
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
4.0
pF
= 1.0MHz, See Fig. 5
C
oss
Output Capacitance
890
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
30
V
GS
= 0V, V
DS
= 320V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
45
V
GS
= 0V, V
DS
= 0V to 320V
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
400
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.5 V/C Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
1.0
V
GS
= 10V, I
D
= 3.3A
V
GS(th)
Gate Threshold Voltage
2.0
4.5
V
V
DS
= V
GS
, I
D
= 250A
25
A
V
DS
= 400V, V
GS
= 0V
250
V
DS
= 320V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
100
V
GS
= 30V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -30V
Static @ T
J
= 25C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Dynamic @ T
J
= 25C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
290
mJ
I
AR
Avalanche Current
5.5
A
E
AR
Repetitive Avalanche Energy
7.4
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.6
V
T
J
= 25C, I
S
= 5.5A, V
GS
= 0V
t
rr
Reverse Recovery Time
370
550
ns
T
J
= 25C, I
F
= 3.5A
Q
r r
Reverse RecoveryCharge
1.6
2.4
C
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
5.5
22
A
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.70
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
62
Thermal Resistance
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
4.0
5.0
6.0
7.0
8.0
9.0
10.0
V = 50V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
5.9A
0.01
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
5.5
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0
5
10
15
20
25
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
5.9A
V
= 80V
DS
V
= 200V
DS
V
= 320V
DS
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
5.5
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
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Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
T , Case Temperature
( C)
I , Drain Current (A)
C
D
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
VDS
ID
IG
3mA
VGS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(B R )D SS
I
A S
R G
I
A S
0 .0 1
tp
D .U .T
L
V D S
+
-
VD D
D R IV E R
A
1 5 V
2 0 V
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
25
50
75
100
125
150
0
100
200
300
400
500
600
700
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
ID
TOP
BOTTOM
2.5A
3.5A
5.5A
0.0
1.0
2.0
3.0
4.0
5.0
6.0
IAV , Avalanche Current ( A)
540
550
560
570
580
590
600
610
V
DSav
, Avalanche Voltage ( V )
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7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
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L E AD A S SIG NME NT S
1 - GA TE
2 - DR A IN
3 - S OU RCE
4 - DR A IN
- B -
1.32 (.05 2 )
1.22 (.04 8 )
3 X
0 .5 5 (.0 2 2)
0 .4 6 (.0 1 8)
2.9 2 (.1 15 )
2.6 4 (.1 04 )
4 .69 (.1 8 5)
4 .20 (.1 6 5)
3X
0.93 (.0 37 )
0.69 (.0 27 )
4.0 6 (.16 0 )
3.5 5 (.14 0 )
1.15 (.04 5)
MIN
6.47 (.2 55)
6.10 (.2 40)
3 .7 8 (.14 9)
3 .5 4 (.13 9)
- A -
10 .54 (.41 5)
10 .29 (.40 5)
2 .8 7 (.1 13 )
2 .6 2 (.1 03 )
1 5 .2 4 (.6 0 0)
1 4 .8 4 (.5 8 4)
14 .09 (.55 5)
13 .47 (.53 0)
3X
1.40 (.05 5 )
1.15 (.04 5 )
2 .5 4 (.1 00 )
2X
0.36 (.0 1 4) M B A M
4
1 2 3
N OT ES :
1 DIMEN S IONING & T OLE R AN CIN G PE R A NS I Y1 4.5M, 19 82 . 3 OUT LINE C ONF O RMS T O JED EC O UT LIN E TO -2 2 0A B.
2 CO NT RO LLING D IMEN S ION : IN CH 4 HE A TS IN K & LE A D ME AS UR E MEN TS D O NO T INC LU DE B U RRS .
Part Marking Information
TO-220AB
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
P A R T N U M B E R
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
E X A M P L E : T H IS IS A N IR F 1 0 1 0
W IT H A S S E M B L Y
L O T C O D E 9 B 1 M
A S S E M B L Y
L O T C O D E
D A T E C O D E
(Y Y W W )
Y Y = Y E A R
W W = W E E K
9 2 4 6
IR F 1 0 1 0
9 B 1 M
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
5.5A, di/dt
90A/s, V
DD
V
(BR)DSS
,
T
J
150C
Notes:
Starting T
J
= 25C, L = 19mH
R
G
= 25
, I
AS
= 5.5A. (See Figure 12)
Pulse width
300s; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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8000
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Data and specifications subject to change without notice. 5/00
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