N-Ch P-Ch

DSS

55V

-55V

DS(on)

0.050

0.105

HEXFET

Power MOSFET

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.

2/24/99

S O -8

Generation V Technology

Ultra Low On-Resistance

Dual N and P Channel MOSFET

Surface Mount

Fully Avalanche Rated

IRF7343

Description

D 1

N - C H A N N E L M O S FE T

P -C H A N N E L M O S F E T

D 1

D 2

G 1

S 2

G 2

S 1

T op V iew

Max.

N-Channel

P-Channel

Units

Drain-Source Voltage

-55

@ T

= 25°C

Continuous Drain Current, V

@ 10V

4.7

-3.4

@ T

= 70°C

Continuous Drain Current, V

@ 10V

3.8

-2.7

Pulsed Drain Current

-27

= 25°C

Maximum Power Dissipation

2.0

= 70°C

Maximum Power Dissipation

1.3

Single Pulse Avalanche Energy

114

Avalanche Current

4.7

-3.4

Repetitive Avalanche Energy

0.20

Gate-to-Source Voltage

± 20

dv/dt

Peak Diode Recovery dv/dt

5.0

-5.0

V/ns

STG

Junction and Storage Temperature Range

-55 to + 150

°C

Parameter

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Maximum Junction-to-Ambient

62.5

°C/W

Thermal Resistance

www.irf.com

PD -91709

IRF7343

www.irf.com

Surface mounted on FR-4 board, t

10sec.

Parameter

Min. Typ. Max. Units

Conditions

N-Ch

= 0V, I

= 250µA

P-Ch -55

= 0V, I

= -250µA

N-Ch

-- 0.059

Reference to 25°C, I

= 1mA

P-Ch

-- 0.054

Reference to 25°C, I

= -1mA

-- 0.043 0.050

= 10V, I

= 4.7A

-- 0.056 0.065

= 4.5V, I

= 3.8A

-- 0.095 0.105

= -10V, I

= -3.4A

-- 0.150 0.170

= -4.5V, I

= -2.7A

N-Ch 1.0

= V

, I

= 250µA

P-Ch -1.0

= V

, I

= -250µA

N-Ch 7.9

= 10V, I

= 4.5A

P-Ch 3.3

= -10V, I

= -3.1A

N-Ch

2.0

= 55V, V

= 0V

P-Ch

-2.0

= -55V, V

= 0V

N-Ch

= 55V, V

= 0V, T

= 55°C

P-Ch

-25

= -55V, V

= 0V, T

= 55°C

GSS

Gate-to-Source Forward Leakage

N-P

±100

= ±20V

N-Ch

P-Ch

N-Ch

2.3

3.4

P-Ch

3.0

4.5

N-Ch

7.0

P-Ch

8.4

N-Ch

8.3

P-Ch

N-Ch

3.2

4.8

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

740

P-Ch

690

N-Ch

190

P-Ch

210

N-Ch

P-Ch

(BR)DSS

Drain-to-Source Breakdown Voltage

(BR)DSS

Breakdown Voltage Temp. Coefficient

DS(ON)

Static Drain-to-Source On-Resistance

GS(th)

Gate Threshold Voltage

Forward Transconductance

DSS

Drain-to-Source Leakage Current

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

d(on)

Turn-On Delay Time

Rise Time

d(off)

Turn-Off Delay Time

Fall Time

iss

Input Capacitance

oss

Output Capacitance

rss

Reverse Transfer Capacitance

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

V/°C

µA

N-Channel
I

= 4.5A, V

= 44V, V

= 10V

P-Channel
I

= -3.1A, V

= -44V, V

= -10V

N-Channel
V

= 28V, I

= 1.0A, R

= 6.0

= 16

P-Channel
V

= -28V, I

= -1.0A, R

= 6.0

= 16

N-Channel
V

= 0V, V

= 25V, = 1.0MHz

P-Channel
V

= 0V, V

= -25V, = 1.0MHz

N-Ch

P-Ch

Parameter

Min. Typ. Max. Units

Conditions

N-Ch

2.0

P-Ch

-2.0

N-Ch

P-Ch

-27

N-Ch

0.70

1.2

= 25°C, I

= 2.0A, V

= 0V

P-Ch

-0.80 -1.2

= 25°C, I

= -2.0A, V

= 0V

N-Ch

P-Ch

N-Ch

120

170

P-Ch

130

Source-Drain Ratings and Characteristics

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

N-Channel
T

= 25°C, I

=2.0A, di/dt = 100A/µs

P-Channel

= 25°C, I

= -2.0A, di/dt = 100A/µs

N-Channel I

4.7A, di/dt

220A/µs, V

(BR)DSS

, T

150°C

P-Channel I

-3.4A, di/dt

-150A/µs, V

(BR)DSS

, T

150°C

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 22 )

Notes:

Pulse width

300µs; duty cycle

2%.

N-Channel Starting T

= 25°C, L = 6.5mH R

= 25

, I

= 4.7A.

P-Channel Starting T

= 25°C, L = 20mH R

= 25

, I

= -3.4A.

IRF7343

www.irf.com

100

V = 25V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 4. Typical Source-Drain Diode

Forward Voltage

N-Channel

100

0.1

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.5V
3.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

3.0V

100

0.1

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.5V
3.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

3.0V

4.5V

0.1

100

0.2

0.5

0.8

1.1

1.4

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 150 C

T = 25 C

IRF7343

www.irf.com

0.040

0.060

0.080

0.100

0.120

R , Drain-to-Source On Resistance

I , Drain Current (A)

DS (on)

VGS = 10V

VGS = 4.5V

Fig 5. Normalized On-Resistance

Vs. Temperature

Fig 8. Maximum Avalanche Energy

Vs. Drain Current

Fig 6. Typical On-Resistance Vs. Drain

Current

Fig 7. Typical On-Resistance Vs. Gate

Voltage

N-Channel

(

)

DS(on)

, Drain-to-Source On Resistance

( )

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

10V

4.7A

100

125

150

120

160

200

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

2.1A
3.8A
4.7A

0 . 0 4

0 . 0 6

0 . 0 8

0 . 1 0

0 . 1 2

1 0

G S

V , Gate-to-Source V oltage (V )

I = 4.7A

IRF7343

www.irf.com

100

200

400

600

800

1000

1200

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

N-Channel

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

I =

4.5A

= 12V

= 30V

= 48V

0.1

100

0.0001

0.001

0.01

0.1

100

Notes:

1. Duty factor D =

t / t

2. Peak T = P

x Z

+ T

thJA

t , Rectangular Pulse Duration (sec)

Thermal Response

(Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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