HEXFET
Power MOSFET
2/22/00
IRF7402
Description
Parameter
Max.
Units
R
JA
Maximum Junction-to-Ambient
50
C/W
Thermal Resistance
l
Generation V Technology
l
Ultra Low On-Resistance
l
N-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (<1.1mm)
l
Available in Tape & Reel
l
Fast Switching
T o p V ie w
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
V
DSS
= 20V
R
DS(on)
= 0.035
Fifth Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characterstics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared or wave soldering techniques.
Power dissipation of greater than 0.8 W is possible in a
typical PCB mount application.
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1
SO-8
Parameter
Max.
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 4.5V
6.8
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 4.5V
5.4
A
I
DM
Pulsed Drain Current
54
P
D
@T
A
= 25C
Power Dissipation
2.5
W
P
D
@T
A
= 70C
Power Dissipation
1.6
Linear Derating Factor
0.02
W/C
V
GS
Gate-to-Source Voltage
12
V
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
Absolute Maximum Ratings
PD - 93851A
IRF7402
2
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Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.2
V
T
J
= 25C, I
S
= 3.8A, V
GS
= 0V
t
rr
Reverse Recovery Time
51
77
ns
T
J
= 25C, I
F
= 3.8A
Q
r r
Reverse Recovery Charge
69
100
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
54
2.5
A
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
20
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.024
V/C
Reference to 25C, I
D
= 1mA
0.035
V
GS
= 4.5V, I
D
= 4.1A
0.050
V
GS
= 2.7V, I
D
= 3.5A
V
GS(th)
Gate Threshold Voltage
0.70
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
6.1
S
V
DS
= 10V, I
D
= 1.9A
1.0
V
DS
= 16V, V
GS
= 0V
25
V
DS
= 16V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
100
V
GS
= 12V
Gate-to-Source Reverse Leakage
-100
V
GS
= -12V
Q
g
Total Gate Charge
14
22
I
D
= 3.8A
Q
gs
Gate-to-Source Charge
2.0
3.0
nC
V
DS
= 16V
Q
gd
Gate-to-Drain ("Miller") Charge
6.3
9.5
V
GS
= 4.5V, See Fig. 6 and 12
t
d(on)
Turn-On Delay Time
5.1
V
DD
= 10V
t
r
Rise Time
47
I
D
= 3.8A
t
d(off)
Turn-Off Delay Time
24
R
G
= 6.2
t
f
Fall Time
32
R
D
= 2.6
C
iss
Input Capacitance
650
V
GS
= 0V
C
oss
Output Capacitance
300
pF
V
DS
= 15V
C
rss
Reverse Transfer Capacitance
150
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width
300s; duty cycle
2%.
I
SD
3.8A, di/dt
96A/s, V
DD
V
(BR)DSS
,
T
J
150C
When mounted on 1 inch square copper board, t<10 sec
This data sheet has curves & data from IRF7601
IRF7402
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3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
1 0
1 0 0
0.1
1
1 0
I
,
D
r
ai
n-
t
o
-
S
ou
r
c
e C
u
r
r
e
nt
(
A
)
D
V , D ra in -to -S o urc e V o lta g e (V )
D S
20 s P U LS E W ID TH
T = 2 5C
A
VGS
TO P 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOT TOM 1.5V
1.5V
J
0 . 1
1
1 0
1 0 0
1 . 5
2 . 0
2 . 5
3 . 0
3 . 5
T = 25 C
T = 1 5 0 C
J
J
G S
V , G ate-to -S o urce V oltag e (V )
D
I
,
D
r
a
i
n
-
t
o
-
S
o
u
rc
e
C
u
rre
n
t
(A
)
A
V = 1 0 V
2 0 s P UL S E W ID TH
D S
0.1
1
1 0
1 0 0
0.1
1
1 0
I
,
D
r
ai
n-
t
o
-
S
ou
r
c
e C
u
r
r
e
nt
(
A
)
D
V , D ra in -to -S o urc e V o lta g e (V )
D S
A
VGS
TO P 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOT TOM 1.5V
1 .5V
20 s P U LS E W ID TH
T = 1 50 C
J
0.0
0.5
1.0
1.5
2.0
-60
-40
-20
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
J
T , Junction T em perature (C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n
)
(
N
or
m
a
l
i
z
ed)
A
V = 4.5 V
G S
I = 3.8A
D
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF7402
4
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
D S
V , D rain-to -S o urc e V oltage (V )
A
V = 0V , f = 1 M H z
C = C + C , C S H O R TE D
C = C
C = C + C
G S
iss g s g d d s
rs s g d
o ss ds g d
C
is s
C
os s
C
rs s
0
2
4
6
8
1 0
0
4
8
1 2
1 6
2 0
2 4
G
GS
A
Q , Total G ate C harge (nC )
F O R T E S T C IR C U IT
S E E F IG U R E 9
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
I = 3 .8A
V = 16 V
D
D S
0 . 1
1
1 0
1 0 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
2 . 4
T = 2 5C
T = 15 0C
J
J
V = 0V
G S
V , S o urc e-to-D rain V olta ge (V )
I , R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
1
10
100
1000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
IRF7402
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10a. Switching Time Test Circuit
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
4.5V
Pulse Width
1
s
Duty Factor
0.1 %
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10b. Switching Time Waveforms
R
D
V
GS
V
DD
R
G
D.U.T.
25
50
75
100
125
150
0.0
2.0
4.0
6.0
8.0
T , Case Temperature
( C)
I , Drain Current (A)
C
D
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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