Parameter
Max.
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -10V
-10
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ - 10V
-7.1
I
DM
Pulsed Drain Current
-45
P
D
@T
A
= 25C
Power Dissipation
2.5
Linear Derating Factor
0.02
mW/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
370 mJ
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
IRF7416
PD - 9.1356D
V
DSS
= -30V
R
DS(on)
= 0.02
HEXFET
Power MOSFET
S O -8
T op V ie w
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
l
Generation V Technology
l
Ultra Low On-Resistance
l
P-Channel Mosfet
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
Absolute Maximum Ratings
W
A
8/25/97
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
R
JA
Maximum Junction-to-Ambient
50
C/W
IRF7416
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.0
V
T
J
= 25C, I
S
= -5.6A, V
GS
= 0V
t
rr
Reverse Recovery Time
56
85
ns
T
J
= 25C, I
F
= -5.6A
Q
rr
Reverse RecoveryCharge
99
150
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
A
-45
-3.1
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-30
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.024
V/C
Reference to 25C, I
D
= -1mA
0.020
V
GS
= -10V, I
D
= -5.6A
0.035
V
GS
= -4.5V, I
D
= -2.8A
V
GS(th)
Gate Threshold Voltage
-1.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
5.6
S
V
DS
= -10V, I
D
= -2.8A
-1.0
V
DS
= -24V, V
GS
= 0V
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
-100
V
GS
= -20V
Gate-to-Source Reverse Leakage
100
V
GS
= 20V
Q
g
Total Gate Charge
61
92
I
D
= -5.6A
Q
gs
Gate-to-Source Charge
8.0
12
nC
V
DS
= -24V
Q
gd
Gate-to-Drain ("Miller") Charge
22
32
V
GS
= -10V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time
18
V
DD
= -15V
t
r
Rise Time
49
I
D
= -5.6A
t
d(off)
Turn-Off Delay Time
59
R
G
= 6.2
t
f
Fall Time
60
R
D
= 2.7
,
See Fig. 10
C
iss
Input Capacitance
1700
V
GS
= 0V
C
oss
Output Capacitance
890
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
410
= 1.0MHz, See Fig. 5
A
nA
ns
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
-5.6A, di/dt
100A/s, V
DD
V
(BR)DSS
,
T
J
150C
Starting T
J
= 25C, L = 25mH
R
G
= 25
, I
AS
= -5.6A. (See Figure 12)
Pulse width
300s; duty cycle
2%.
Surface mounted on FR-4 board, t
10sec.
IRF7416
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
1 0
1 0 0
0 . 1
1
1 0
D
D S
20 s P U LSE W I DTH
T = 25 C
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
r
c
e
C
u
rr
e
n
t
(
A
)
-V , D ra in-to-S ou rce V o lta ge (V )
J
-3. 0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
1
1 0
1 0 0
0 . 1
1
1 0
D
D S
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
r
c
e
C
u
rr
e
n
t
(
A
)
-V , D ra in-to-S ou rce V o lta ge (V )
-3 .0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
20 s P U LSE W I DTH
T = 15 0C
J
1
1 0
1 0 0
3 . 0
3 . 5
4 . 0
4 . 5
5 . 0
5 . 5
T = 2 5 C
T = 1 5 0 C
J
J
G S
D
A
-
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-V , Ga te -to -S o u rce V o ltag e (V )
V = -1 0 V
2 0 s P U L S E W ID T H
DS
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
J
T , Ju nctio n T emp eratu re (C)
R
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
on)
(
N
o
r
m
a
l
i
z
ed)
A
V = -10 V
G S
I = -5. 6A
D
IRF7416
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
1 0 0 0
2 0 0 0
3 0 0 0
4 0 0 0
1
1 0
1 0 0
C
,
C
a
pac
i
t
anc
e (
p
F
)
D S
V , D rain-to -S ou rce Volta ge (V )
A
V = 0 V, f = 1M H z
C = C + C , C SH OR TE D
C = C
C = C + C
G S
is s gs gd ds
rss gd
oss d s gd
C
i s s
C
o s s
C
rs s
0
4
8
1 2
1 6
2 0
0
2 0
4 0
6 0
8 0
1 0 0
G
GS
A
-
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
Q , Tota l Gate Ch arge (n C)
V = -24 V
V = -15 V
DS
DS
FO R TEST C IR C U IT
SEE F IGU R E 9
I = -5.6 A
D
1
1 0
1 0 0
0 . 4
0 . 6
0 . 8
1 . 0
1 . 2
T = 25 C
T = 1 50C
J
J
V = 0 V
G S
S D
SD
A
-V , S ou rce -to -Drain V olta ge (V )
-
I
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t (
A
)
1
10
100
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
IRF7416
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
+
-
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
-10V
D.U.T.
V
DS
I
D
I
G
-3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-10V
Q
G
Q
GS
Q
GD
V
G
Charge
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
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