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Parameter
Max.
Units
V
DS
Drain- Source Voltage
-30
V
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -10V
-11
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ -10V
-9.3
A
I
DM
Pulsed Drain Current
-47
P
D
@T
A
= 25C
Power Dissipation
2.5
P
D
@T
A
= 70C
Power Dissipation
1.6
Linear Derating Factor
20
mW/C
V
GS
Gate-to-Source Voltage
20
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
3/29/01
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1
IRF7424
HEXFET
Power MOSFET
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
PD- 94024A
Parameter
Max.
Units
R
JA
Maximum Junction-to-Ambient
50
C/W
Thermal Resistance
Absolute Maximum Ratings
W
T o p V ie w
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
V
DSS
R
DS(on)
max (m
)
)
)
)
)
I
D
-30V
13.5@V
GS
= -10V
-11A
22@V
GS
= -4.5V
-8.8A
SO-8
IRF7424
2
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-30
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.019
V/C
Reference to 25C, I
D
= -1mA
13.5
V
GS
= -10V, I
D
= -11A
22
V
GS
= -4.5V, I
D
= -8.8A
V
GS(th)
Gate Threshold Voltage
-1.0
-2.5
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
17
S
V
DS
= -10V, I
D
= -11A
-15
V
DS
= -24V, V
GS
= 0V
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 70C
Gate-to-Source Forward Leakage
-100
V
GS
= -20V
Gate-to-Source Reverse Leakage
100
V
GS
= 20V
Q
g
Total Gate Charge
75
110
I
D
= -11A
Q
gs
Gate-to-Source Charge
14
21
nC
V
DS
= -15V
Q
gd
Gate-to-Drain ("Miller") Charge
12
18
V
GS
= -10V
t
d(on)
Turn-On Delay Time
15
V
DD
= -15V
t
r
Rise Time
23
I
D
= -1.0A
t
d(off)
Turn-Off Delay Time
150
R
G
= 6.0
t
f
Fall Time
76
V
GS
= -10V
C
iss
Input Capacitance
4030
V
GS
= 0V
C
oss
Output Capacitance
580
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
410
= 1.0kHz
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.2
V
T
J
= 25C, I
S
= -2.5A, V
GS
= 0V
t
rr
Reverse Recovery Time
40
60
ns
T
J
= 25C, I
F
= -2.5A
Q
rr
Reverse Recovery Charge
47
71
nC
di/dt = -100A/s
Source-Drain Ratings and Characteristics
A
-47
-2.5
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width
400s; duty cycle
2%.
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
m
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Surface mounted on 1 in square Cu board
IRF7424
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.5V
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.5V
0.1
1
10
100
2.5
3.0
3.5
4.0
4.5
5.0
V = -15V
20s PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
-10V
-11A
IRF7424
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
1
10
100
0
1000
2000
3000
4000
5000
6000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
1
10
100
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
0
20
40
60
80
0
2
4
6
8
10
12
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-11A
V
= -15V
DS
V
= -24V
DS
IRF7424
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0
2
4
6
8
10
12
T , Case Temperature ( C)
-I , Drain Current (A)
C
D
V
DS
V
GS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
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