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1
2/22/01
IRF7450
SMPS MOSFET
HEXFET
Power MOSFET
Parameter
Max.
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V
2.5
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V
2.0
A
I
DM
Pulsed Drain Current
20
P
D
@T
A
= 25C
Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/C
V
GS
Gate-to-Source Voltage
30
V
dv/dt
Peak Diode Recovery dv/dt
11
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Absolute Maximum Ratings
Notes
through
are on page 8
SO-8
T o p V ie w
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
V
DSS
R
DS(on)
max
I
D
200V
0.17
@V
GS
= 10V
2.5A
Symbol
Parameter
Typ.
Max.
Units
R
JL
Junction-to-Drain Lead
20
R
JA
Junction-to-Ambient
50
C/W
Thermal Resistance
l
High frequency DC-DC converters
Benefits
Applications
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
PD- 93893A
IRF7450
2
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Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
2.6
S
V
DS
= 50V, I
D
= 1.5A
Q
g
Total Gate Charge
26
39 I
D
= 1.5A
Q
gs
Gate-to-Source Charge
6.0
9.0
nC
V
DS
= 160V
Q
gd
Gate-to-Drain ("Miller") Charge
12
18
V
GS
= 10V,
t
d(on)
Turn-On Delay Time
10
V
DD
= 100V
t
r
Rise Time
3.0
I
D
= 1.5A
t
d(off)
Turn-Off Delay Time
17
R
G
= 6.0
t
f
Fall Time
18
V
GS
= 10V
C
iss
Input Capacitance
940
V
GS
= 0V
C
oss
Output Capacitance
160
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
33
pF
= 1.0MHz
C
oss
Output Capacitance
1100
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
66
V
GS
= 0V, V
DS
= 160V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
25
V
GS
= 0V, V
DS
= 0V to 160V
Dynamic @ T
J
= 25C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
230
mJ
I
AR
Avalanche Current
2.5
A
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 1.5A, V
GS
= 0V
t
rr
Reverse Recovery Time
97
146
ns
T
J
= 25C, I
F
= 1.5A
Q
rr
Reverse RecoveryCharge
350
525
nC
di/dt = 100A/s
Diode Characteristics
2.3
20
A
Static @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
200
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.26 V/C Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.17
V
GS
= 10V, I
D
= 1.5A
V
GS(th)
Gate Threshold Voltage
3.0
5.5
V
V
DS
= V
GS
, I
D
= 250A
25
A
V
DS
= 200V, V
GS
= 0V
250
V
DS
= 160V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
100
V
GS
= 30V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -30V
I
GSS
I
DSS
Drain-to-Source Leakage Current
IRF7450
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3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I D
, Drain-to-Source Current (A)
5.0V
20s PULSE WIDTH
Tj = 25C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
I D
, Drain-to-Source Current (A)
5.0V
20s PULSE WIDTH
Tj = 150C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
0.1
1
10
100
5.0
5.5
6.0
6.5
7.0
7.5
8.0
V = 50V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
2.5A
IRF7450
4
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
10
20
30
40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
1.5A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
I D
, Drain-to-Source Current (A)
TA = 25C
TJ = 150C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100sec
IRF7450
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
T , Case Temperature
( C)
I , Drain Current (A)
C
D
IRF7450
6
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Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
GS
Q
G
Q
GS
Q
GD
V
G
Charge
t p
V (B R )D S S
I A S
R G
IA S
0.01
tp
D .U .T
L
VD S
+
-
VD D
DRIVE R
A
1 5 V
20V
6
8
10
12
14
16
VGS, Gate -to -Source Voltage (V)
0.10
0.15
0.20
0.25
0.30
0.35
R
DS(on)
, Drain-to -Source On Resistance (
)
ID = 1.5A
25
50
75
100
125
150
0
100
200
300
400
500
600
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
ID
TOP
BOTTOM
1.1A
1.6A
2.5A
0
4
8
12
16
20
24
ID , Drain Current (A)
0.12
0.14
0.16
0.18
R
DS
( on) , Drain-to-Source On Resistance (
)
VGS = 10V
IRF7450
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7
SO-8 Package Details
K x 4 5
C
8 X
L
8 X
H
0 .2 5 (.0 1 0 ) M A M
A
0 .1 0 (.0 0 4 )
B 8 X
0 .2 5 (.0 1 0 ) M C A S B S
- C -
6 X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
R E C O M M E N D E D F O O T P R IN T
0 .7 2 (.0 2 8 )
8 X
1 .7 8 (.0 7 0 )
8 X
6 .4 6 ( .2 5 5 )
1 .2 7 ( .0 5 0 )
3 X
D IM
IN C H E S M ILLIM E T E R S
M IN M A X M IN M A X
A .05 32 .06 88 1.3 5 1.75
A 1 .00 40 .00 98 0.1 0 0.25
B .01 4 .01 8 0.3 6 0.46
C .00 75 .009 8 0.19 0.25
D .18 9 .196 4.80 4.98
E .15 0 .15 7 3.8 1 3.99
e .05 0 B A S IC 1.27 B A S IC
e1 .02 5 B A S IC 0 .635 B A S IC
H .22 84 .244 0 5.8 0 6.20
K .01 1 .01 9 0.2 8 0.48
L 0.16 .05 0 0.4 1 1.27
0 8 0 8
N O T E S :
1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 .
2 . C O N T R O L L IN G D IM E N S IO N : IN C H .
3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A .
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ).
D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E ..
5
6
A 1
e 1
SO-8 Part Marking
IRF7450
8
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting T
J
= 25C, L = 73mH
R
G
= 25
, I
AS
= 2.5A.
Pulse width
400s; duty cycle
2%.
When mounted on 1 inch square copper board
33 0.00
(12.992)
M AX .
14.4 0 ( .566 )
12.4 0 ( .488 )
N O T ES :
1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER .
2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1.
F EE D D IRE C TIO N
TER M IN AL N UM B ER 1
1 2.3 ( .484 )
1 1.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N O T E S :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M ILL IM E TE R S (IN C H E S ).
3 . O U TL IN E C O N FO R M S T O E IA -4 8 1 & E IA -5 4 1 .
SO-8 Tape and Reel
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.2/01
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