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11/23/01
IRF7452
SMPS MOSFET
HEXFET
Power MOSFET
High frequency DC-DC converters
Benefits
Applications
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
V
DSS
R
DS(on)
max
I
D
100V
0.060
4.5A
Typical SMPS Topologies
Telecom 48V input DC-DC with Half Bridge Primary or Datacom 28V input
with Passive Reset Forward Converter Primary
Parameter
Max.
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V
4.5
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V
3.6
A
I
DM
Pulsed Drain Current
36
P
D
@T
A
= 25C
Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/C
V
GS
Gate-to-Source Voltage
30
V
dv/dt
Peak Diode Recovery dv/dt
3.5
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Absolute Maximum Ratings
Notes
through are on page 8
PD- 93897C
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
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Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
3.4
S
V
DS
= 50V, I
D
= 2.7A
Q
g
Total Gate Charge
33
50 I
D
= 2.7A
Q
gs
Gate-to-Source Charge
7.3
11
nC
V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge
16
24
V
GS
= 10V,
t
d(on)
Turn-On Delay Time
9.5
V
DD
= 50V
t
r
Rise Time
11
I
D
= 2.7A
t
d(off)
Turn-Off Delay Time
16
R
G
= 6.0
t
f
Fall Time
13
V
GS
= 10V
C
iss
Input Capacitance
930
V
GS
= 0V
C
oss
Output Capacitance
300
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
84
pF
= 1.0MHz
C
oss
Output Capacitance
1370
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
170
V
GS
= 0V, V
DS
= 80V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
280
V
GS
= 0V, V
DS
= 0V to 80V
Dynamic @ T
J
= 25C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
200
mJ
I
AR
Avalanche Current
4.5
A
E
AR
Repetitive Avalanche Energy
0.25
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 2.7A, V
GS
= 0V
t
rr
Reverse Recovery Time
77
120
ns
T
J
= 25C, I
F
= 2.7A
Q
rr
Reverse RecoveryCharge
270
410
nC
di/dt = 100A/s
Diode Characteristics
2.3
36
A
Static @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
100
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.11 V/C Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.060
V
GS
= 10V, I
D
= 2.7A
V
GS(th)
Gate Threshold Voltage
3.0
5.5
V
V
DS
= V
GS
, I
D
= 250A
25
A
V
DS
= 100V, V
GS
= 0V
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 24V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -24V
I
GSS
I
DSS
Drain-to-Source Leakage Current
Parameter
Typ.
Max.
Units
R
JA
Maximum Junction-to-Ambient
50
C/W
Thermal Resistance
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Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
V
, Drain-to-Source Voltage (V)
I
,
D
r
ai
n-t
o
-Source
C
u
rrent
(A)
DS
D
5.0V
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
V
, Drain-to-Source Voltage (V)
I
,
Drain-to-Source
Current
(A)
DS
D
5.0V
0.1
1
10
100
5.0
6.0
7.0
8.0
V
= 50V
20s PULSE WIDTH
DS
V
, Gate-to-Source Voltage (V)
I
,
Drain-to-Source
Current
(A)
GS
D
T = 25 C
J
T = 150 C
J
Fig 4. Normalized On-Resistance
Vs. Temperature
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R
,
Drain-to-Source
On
Resistance
(Normalized)
J
D
S
(
on)
V
=
I =
GS
D
10V
4.5A
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0
10
20
30
40
50
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
,
Gate-to-Source
Voltage
(V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
2.7A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
V
,Source-to-Drain Voltage (V)
I
,
Reverse
D
rain
Current
(A)
SD
SD
V
= 0 V
GS
T = 25 C
J
T = 150 C
J
Fig 8. Maximum Safe Operating Area
0.1
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
A
V
, Drain-to-Source Voltage (V)
I
,
Drain
C
urrent
(A)
I
,
Drain
C
urrent
(A)
DS
D
10us
100us
1ms
10ms
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
C iss = Cgs + Cgd , Cds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
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Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Ther
m
a
l
R
esponse
(Z
)
1
th
JA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature
( C)
I
,
Drain
C
urrent
(A)
C
D
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