IRF7467
SMPS MOSFET
Notes
through
are on page 8
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
V
DS
Drain-Source Voltage
30
V
V
GS
Gate-to-Source Voltage
12 V
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V
11
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V
9.0
A
I
DM
Pulsed Drain Current
90
P
D
@T
A
= 25C
Maximum Power Dissipation
2.5
W
P
D
@T
A
= 70C
Maximum Power Dissipation
1.6
W
Linear Derating Factor 0.02 W/C
T
J
, T
STG
Junction and Storage Temperature Range
-55 to + 150
C
HEXFET
Power MOSFET
l
High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
Benefits
Applications
V
DSS
R
DS(on)
max
I
D
30V
12m
11A
www.irf.com
1
3/25/01
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
at 4.5V V
GS
l
Fully Characterized Avalanche Voltage
and Current
SO-8
T o p V ie w
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
Symbol
Parameter
Typ.
Max.
Units
R
JL
Junction-to-Drain Lead
20
R
JA
Junction-to-Ambient
50
C/W
Thermal Resistance
l
High Frequency Buck Converters for
Computer Processor Power
PD - 93883B
IRF7467
2
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Symbol
Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
28
S
V
DS
= 16V, I
D
= 9.0A
Q
g
Total Gate Charge
21 32 I
D
= 9.0A
Q
gs
Gate-to-Source Charge
6.7
10
nC
V
DS
= 15V
Q
gd
Gate-to-Drain ("Miller") Charge
5.8
8.7
V
GS
= 4.5V
Q
oss
Output Gate Charge
21
29
V
GS
= 0V, V
DS
= 15V
t
d(on)
Turn-On Delay Time
7.8
V
DD
= 15V,
t
r
Rise Time
2.5
I
D
= 9.0A
t
d(off)
Turn-Off Delay Time
19
R
G
= 1.8
t
f
Fall Time
4.0
V
GS
= 4.5V
C
iss
Input Capacitance
2530
V
GS
= 0V
C
oss
Output Capacitance
706
V
DS
= 15V
C
rss
Reverse Transfer Capacitance
46
pF
= 1.0MHz
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
0.79
1.3
V
T
J
= 25C, I
S
= 9.0A, V
GS
= 0V
0.65
T
J
= 125C, I
S
= 9.0A, V
GS
= 0V
t
rr
Reverse Recovery Time
40
60
ns
T
J
= 25C, I
F
= 9.0A, V
R
= 15V
Q
rr
Reverse Recovery Charge
56
84
nC
di/dt = 100A/s
t
rr
Reverse Recovery Time
43
65
ns
T
J
= 125C, I
F
= 9.0A, V
R
=15V
Q
rr
Reverse Recovery Charge
64
96
nC
di/dt = 100A/s
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
223
mJ
I
AR
Avalanche Current
11
A
Avalanche Characteristics
Static @ T
J
= 25C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.029 V/C Reference to 25C, I
D
= 1mA
9.4
12
V
GS
= 10V, I
D
= 11A
10.6 13.5
m
V
GS
= 4.5V, I
D
= 9.0A
17
35
V
GS
= 2.8V, I
D
= 5.5A
V
GS(th)
Gate Threshold Voltage
0.6
2.0
V
V
DS
= V
GS
, I
D
= 250A
20
A
V
DS
= 16V, V
GS
= 0V
100
V
DS
= 16V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
200
V
GS
= 12V
Gate-to-Source Reverse Leakage
-200
nA
V
GS
= -12V
S
D
G
Diode Characteristics
2.3
90
A
V
SD
Diode Forward Voltage
Dynamic @ T
J
= 25C (unless otherwise specified)
ns
IRF7467
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3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
0.1
1
10
100
2.0
2.4
2.8
3.2
3.6
V = 15V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
11A
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, Drain-to-Source Current (A)
2.0V
20s PULSE WIDTH
Tj = 25C
VGS
TOP 15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, Drain-to-Source Current (A)
2.0V
20s PULSE WIDTH
Tj = 150C
VGS
TOP 15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
IRF7467
4
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
1
10
100
0
800
1600
2400
3200
4000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
rss
C
oss
C
iss
0
8
16
24
32
40
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
9.0A
V
= 15V
DS
V
= 24V
DS
1
10
100
1000
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0.1
1
10
100
0.3
0.6
0.9
1.2
1.5
1.8
2.1
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
IRF7467
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0
2
4
6
8
10
12
T , Case Temperature ( C)
I , Drain Current (A)
C
D
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