Parameter
Max.
Units
V
DS
Drain- Source Voltage
20
V
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 4.5V
5.4
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 4.5V
4.3
A
I
DM
Pulsed Drain Current
Q
40
P
D
@T
A
= 25C
Power Dissipation
1.3
P
D
@T
A
= 70C
Power Dissipation
0.80
Linear Derating Factor
10
mW/C
E
AS
Single Pulse Avalanche Energy
T
33
mJ
V
GS
Gate-to-Source Voltage
12
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
02/16/01
HEXFET
Power MOSFET
Parameter
Max.
Units
R
JA
Maximum Junction-to-Ambient
S
100
C/W
Thermal Resistance
V
DSS
= 20V
R
DS(on)
= 0.030
Description
Absolute Maximum Ratings
W
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1
IRF7530
q
Trench Technology
q
Ultra Low On-Resistance
q
Dual N-Channel MOSFET
q
Very Small SOIC Package
q
Low Profile (<1.1mm)
q
Available in Tape & Reel
New trench HEXFET
power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8
package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
Micro8
D 1
D 1
D 2
D 2
G 1
S 2
G 2
S 1
T o p V ie w
8
1
2
3
4
5
6
7
PD-93760B
IRF7530
2
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Q
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
Q
p-n junction diode.
V
SD
Diode Forward Voltage
1.2
V
T
J
= 25C, I
S
= 1.3A, V
GS
= 0V
R
t
rr
Reverse Recovery Time
19
29
ns
T
J
= 25C, I
F
= 1.3A
Q
rr
Reverse RecoveryCharge
13
20
nC
di/dt = 100A/s
R
Source-Drain Ratings and Characteristics
40
1.3
A
S
When mounted on 1 inch square copper board, t<10 sec
S
D
G
T
Starting T
J
= 25C, L = 2.6mH
R
G
= 25
, I
AS
= 5.0A. (See Figure 10)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
20
V
V
GS
= 0V, I
D
= 250uA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.01
V/C
Reference to 25C, I
D
= 1mA
0.030
V
GS
= 4.5V, I
D
= 5.4A
R
0.045
V
GS
= 2.5V, I
D
= 4.6A
R
V
GS(th)
Gate Threshold Voltage
0.60
1.2
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
13
S
V
DS
= 10V, I
D
= 5.4A
1.0
V
DS
= 16V, V
GS
= 0V
25
V
DS
= 16V, V
GS
= 0V, T
J
= 70C
Gate-to-Source Forward Leakage
100
V
GS
= 12V
Gate-to-Source Reverse Leakage
-100
V
GS
= -12V
Q
g
Total Gate Charge
18
26
I
D
= 5.4A
Q
gs
Gate-to-Source Charge
3.4
5.1
nC
V
DS
= 16V
Q
gd
Gate-to-Drain ("Miller") Charge
3.4
5.1
V
GS
= 4.5V
R
t
d(on)
Turn-On Delay Time
8.5
V
DD
= 10V
t
r
Rise Time
11
I
D
= 1.0A
t
d(off)
Turn-Off Delay Time
36
R
G
= 6.0
t
f
Fall Time
16
R
D
= 10
R
C
iss
Input Capacitance
1310
V
GS
= 0V
C
oss
Output Capacitance
180
pF
V
DS
= 15V
C
rss
Reverse Transfer Capacitance
150
= 1.0MHz
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
R
Pulse width
400s; duty cycle
2%.
IRF7530
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
4.5V
5.0A
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.25V
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.25V
10
100
2.0
2.5
3.0
3.5
4.0
4.5
V = 15V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
IRF7530
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
5
10
15
20
25
30
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
5.0A
V
= 4V
DS
V
= 10V
DS
V
= 16V
DS
1
10
100
0.5
1.0
1.5
2.0
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
0.1
1
10
100
1000
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1
10
100
0
400
800
1200
1600
2000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
5.4A
IRF7530
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature ( C)
I , Drain Current (A)
C
D
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25
50
75
100
125
150
0
20
40
60
80
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
ID
TOP
BOTTOM
2.2A
4.0A
5.0A
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