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IRF7606
l
Generation V Technology
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (<1.1mm)
l
Available in Tape & Reel
l
Fast Switching
V
DSS
= -30V
R
DS(on)
= 0.09
HEXFET
Power MOSFET
PD - 9.1264C
MICRO8
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Description
T o p View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -10V
-3.6
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ -10V
-2.9
A
I
DM
Pulsed Drain Current
-19
P
D
@T
A
= 25C
Power Dissipation
1.8
W
Linear Derating Factor
14
mW/C
V
GS
Gate-to-Source Voltage
20
V
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
8/25/97
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
R
JA
Maximum Junction-to-Ambient
70
C/W
IRF7606
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.2
V
T
J
= 25C, I
S
= -2.4A, V
GS
= 0V
t
rr
Reverse Recovery Time
43
64
ns
T
J
= 25C, I
F
= -2.4A
Q
rr
Reverse RecoveryCharge
50
76
nC
di/dt = -100A/s
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-30
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.024
V/C
Reference to 25C, I
D
= -1mA
0.09
V
GS
= -10V, I
D
= -2.4A
0.15
V
GS
= -4.5V, I
D
= -1.2A
V
GS(th)
Gate Threshold Voltage
-1.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
2.3
S
V
DS
= -10V, I
D
= -1.2A
-1.0
V
DS
= -24V, V
GS
= 0V
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
-100
V
GS
= -20V
Gate-to-Source Reverse Leakage
100
V
GS
= 20V
Q
g
Total Gate Charge
20
30
I
D
= -2.4A
Q
gs
Gate-to-Source Charge
2.1
3.1
nC
V
DS
= -24V
Q
gd
Gate-to-Drain ("Miller") Charge
7.6
11
V
GS
= -10V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time
13
V
DD
= -15V
t
r
Rise Time
20
I
D
= -2.4A
t
d(off)
Turn-Off Delay Time
43
R
G
= 6.2
t
f
Fall Time
39
R
D
= 6.2
,
See Fig. 10
C
iss
Input Capacitance
520
V
GS
= 0V
C
oss
Output Capacitance
300
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
140
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Notes:
Repetitive rating pulse width limited by max. junction temperature (see fig. 11)
I
SD
-2.4A, di/dt
-130A/s, V
DD
V
(BR)DSS
, T
J
150C
Pulse width
300s duty cycle
2%
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Source-Drain Ratings and Characteristics
A
-19
-1.8
S
D
G
Surface mounted on FR-4 board, t
10sec.
IRF7606
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1
1 0
1 0 0
0 . 1
1
1 0
D
D S
20 s P U LSE W I DTH
T = 25 C
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
r
c
e
C
u
rr
e
n
t
(
A
)
-V , D ra in-to-S ou rce V o lta ge (V )
J
-3 .0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
1
1 0
1 0 0
0 . 1
1
1 0
D
D S
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , D ra in-to-S ou rce V o lta ge (V )
-3 .0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
20 s P U LSE W I DTH
T = 15 0C
J
1
1 0
1 0 0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
T = 2 5 C
T = 15 0 C
J
J
G S
D
A
-
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-V , Ga te -to -S o u rce V o ltag e (V )
V = -1 0 V
2 0 s P U L S E W ID T H
DS
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
J
T , Ju nctio n T emp eratu re (C)
R
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
on)
(
N
o
r
m
a
l
i
z
ed)
A
V = -10 V
G S
I = -2. 7A
D
IRF7606
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
200
400
600
800
1000
1
10
100
C
,
C
a
pac
i
t
anc
e (
p
F
)
D S
V , Drai n-to -So urce V oltag e (V)
A
V = 0V , f = 1MH z
C = C + C , C SH OR TED
C = C
C = C + C
G S
is s gs g d ds
rs s g d
os s ds gd
C
is s
C
o s s
C
rs s
0
4
8
12
16
20
0
5
10
15
20
25
30
G
GS
A
-
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
Q , Tota l Gate Ch arge (n C)
V = -24 V
V = -15 V
DS
DS
FO R TEST C IR C U IT
SEE F IGU R E 9
I = -2.7 A
D
0 . 1
1
1 0
1 0 0
0 . 4
0 . 6
0 . 8
1 . 0
1 . 2
1 . 4
1 . 6
T = 25 C
T = 15 0C
J
J
V = 0 V
G S
S D
SD
A
-I
,
R
e
v
e
rs
e
D
r
a
i
n
C
u
rre
n
t
(A
)
-V , So urce-to-D ra in V oltag e (V )
1
10
100
1
10
100
OPE R ATIO N IN TH IS A RE A LI MI TE D
BY R
D S(o n)
T = 25 C
T = 15 0C
S ing le Pulse
A
-I
,
D
r
a
i
n
C
u
rre
n
t
(A
)
-V , D rain-to-S ource Volta ge (V )
D S
D
A
J
1 00s
1m s
10 ms
IRF7606
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
V
DS
-10V
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
D.U.T.
V
DS
I
D
I
G
-3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
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