1/19/00
HEXFET
Power MOSFET
Parameter
Max.
Units
R
JA
Maximum Junction-to-Ambient
70
C/W
Thermal Resistance
V
DSS
= 20V
R
DS(on)
= 0.030
Description
www.irf.com
1
PD - 93845
IRF7607
q
Trench Technology
q
Ultra Low On-Resistance
q
N-Channel MOSFET
q
Very Small SOIC Package
q
Low Profile (<1.1mm)
q
Available in Tape & Reel
New trench HEXFET
power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8
TM
package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
Micro8
TM
Parameter
Max.
Units
V
DS
Drain- Source Voltage
20
V
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 4.5V
6.5
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 4.5V
5.2
A
I
DM
Pulsed Drain Current
50
P
D
@T
A
= 25C
Power Dissipation
1.8
P
D
@T
A
= 70C
Power Dissipation
1.2
Linear Derating Factor
0.014
W/C
V
GS
Gate-to-Source Voltage
12
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
Absolute Maximum Ratings
W
PROVISIONAL
T o p V ie w
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
IRF7607
2
www.irf.com
PROVISIONAL
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
20
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.016
V/C
Reference to 25C, I
D
= 1mA
0.030
V
GS
= 4.5V, I
D
= 6.5A
0.045
V
GS
= 2.5V, I
D
= 5.2A
V
GS(th)
Gate Threshold Voltage
0.60
1.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
13
S
V
DS
= 10V, I
D
= 6.5A
1.0
V
DS
= 16V, V
GS
= 0V
25
V
DS
= 16V, V
GS
= 0V, T
J
= 70C
Gate-to-Source Forward Leakage
-100
V
GS
= -12V
Gate-to-Source Reverse Leakage
100
V
GS
= 12V
Q
g
Total Gate Charge
15
22
I
D
= 6.5A
Q
gs
Gate-to-Source Charge
2.2
3.3
nC
V
DS
= 10V
Q
gd
Gate-to-Drain ("Miller") Charge
3.5
5.3
V
GS
= 5.0V
t
d(on)
Turn-On Delay Time
8.5
V
DD
= 10V
t
r
Rise Time
11
I
D
= 1.0A
t
d(off)
Turn-Off Delay Time
36
R
G
= 6.0
t
f
Fall Time
16
R
D
= 10
C
iss
Input Capacitance
1310
V
GS
= 0V
C
oss
Output Capacitance
150
pF
V
DS
= 15V
C
rss
Reverse Transfer Capacitance
36
= 1.0MHz
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.2
V
T
J
= 25C, I
S
= 1.7A, V
GS
= 0V
t
rr
Reverse Recovery Time
19
29
ns
T
J
= 25C, I
F
= 1.7A
Q
rr
Reverse Recovery Charge
13
20
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
A
50
1.8
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
Pulse width
300s; duty cycle
2%.
Surface mounted on FR-4 board, t
5sec.
S
D
G
IRF7607
www.irf.com
3
PROVISIONAL
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
4.5V
5.3A
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.50V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.50V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
1.5
2.0
2.5
3.0
3.5
V = 15V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
IRF7607
4
www.irf.com
PROVISIONAL
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
4
8
12
16
20
24
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
5.3A
V
= 10V
DS
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
1
10
100
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
1ms
10ms
1
10
100
0
400
800
1200
1600
2000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
6.5A
IRF7607
www.irf.com
5
PROVISIONAL
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Typical Vgs(th) Variance Vs.
Juction Temperature
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
T , Case Temperature ( C)
I , Drain Current (A)
C
D
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
-50
-25
0
25
50
75
100
125
150
TJ , Temperature ( C )
-0.40
-0.30
-0.20
-0.10
0.00
0.10
0.20
V
GS(th)
, Variace ( V )
Id = 250A
PDF 
ZIP