Parameter
Max.
Units
V
DS
Drain- Source Voltage
-20
V
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -4.5V
-8.2
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ -4.5V
-6.6
A
I
DM
Pulsed Drain Current
-66
P
D
@T
A
= 25C
Power Dissipation
1.8
P
D
@T
A
= 70C
Power Dissipation
1.15
Linear Derating Factor
10
mW/C
E
AS
Single Pulse Avalanche Energy
115
mJ
V
GS
Gate-to-Source Voltage
12
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
5 /25/00
HEXFET
Power MOSFET
Parameter
Max.
Units
R
JA
Maximum Junction-to-Ambient
70
C/W
Thermal Resistance
V
DSS
= -20V
R
DS(on)
= 0.020
Description
Absolute Maximum Ratings
W
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1
T op V ie w
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
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q
Trench Technology
q
Ultra Low On-Resistance
q
P-Channel MOSFET
q
Very Small SOIC Package
q
Low Profile (<1.1mm)
q
Available in Tape & Reel
New trench HEXFET
power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8
TM
package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
MICRO8
TM
PD-91866B
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Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.2
V
T
J
= 25C, I
S
= -7.0A, V
GS
= 0V
t
rr
Reverse Recovery Time
70
105
ns
T
J
= 25C, I
F
= -2.5A
Q
rr
Reverse RecoveryCharge
50
75
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
-66
-1.8
A
When mounted on 1 inch square copper board, t<10 sec
S
D
G
Starting T
J
= 25C, L = 17.8mH
R
G
= 25
, I
AS
= -3.6A. (See Figure 10)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-20
V
V
GS
= 0V, I
D
= -250uA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.01
V/C
Reference to 25C, I
D
= -1mA
0.020
V
GS
= -4.5V, I
D
= -7.0A
0.040
V
GS
= -2.5V, I
D
= -5.1A
V
GS(th)
Gate Threshold Voltage
-0.60
-1.2
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
14.5
S
V
DS
= -10V, I
D
= -7.0A
-1.0
V
DS
= -16V, V
GS
= 0V
-25
V
DS
= -16V, V
GS
= 0V, T
J
= 70C
Gate-to-Source Forward Leakage
-100
V
GS
= -12V
Gate-to-Source Reverse Leakage
100
V
GS
= 12V
Q
g
Total Gate Charge
30
45
I
D
= -6.0A
Q
gs
Gate-to-Source Charge
5.0
7.5
nC
V
DS
= -10V
Q
gd
Gate-to-Drain ("Miller") Charge
7.0
10.5
V
GS
= -5.0V
t
d(on)
Turn-On Delay Time
11
V
DD
= -10V
t
r
Rise Time
100
I
D
= -6.0A
t
d(off)
Turn-Off Delay Time
125
R
G
= 6.2
t
f
Fall Time
172
R
D
= 1.64
C
iss
Input Capacitance
2520
V
GS
= 0V
C
oss
Output Capacitance
615
pF
V
DS
= -10V
C
rss
Reverse Transfer Capacitance
375
= 1.0MHz
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Pulse width
300s; duty cycle
2%.
IRF7663
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
-4.5V
-8.2A
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.25V
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.25V
10
100
2.0
2.5
3.0
3.5
4.0
V = -15V
20s PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
IRF7663
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
10
20
30
40
50
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-6.0A
V
= -10V
DS
1
10
100
0.5
1.0
1.5
2.0
2.5
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J
T = 25 C
J
1
10
100
1000
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1
10
100
-VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
IRF7663
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25
50
75
100
125
150
0
60
120
180
240
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
ID
TOP
BOTTOM
-1.6A
-2.9A
-3.6A
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0.0
1.5
3.0
4.5
6.0
7.5
9.0
T , Case Temperature ( C)
-I , Drain Current (A)
C
D
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