Parameter
Max.
Units
V
DS
Drain- Source Voltage
-12
V
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ -4.5V
8.0
I
D
@ T
C
= 70C
Continuous Drain Current, V
GS
@ -4.5V
7.0
A
I
DM
Pulsed Drain Current
70
P
D
@T
C
= 25C
Power Dissipation
1.5
P
D
@T
C
= 70C
Power Dissipation
0.96
Linear Derating Factor
0.01
W/C
V
GS
Gate-to-Source Voltage
8.0
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
6/19/00
IRF7702
HEXFET
Power MOSFET
Parameter
Max.
Units
R
JA
Maximum Junction-to-Ambient
83
C/W
Thermal Resistance
Description
Absolute Maximum Ratings
W
www.irf.com
1
l
Ultra Low On-Resistance
l
-1.8V Rated
l
P-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile ( < 1.1mm)
l
Available in Tape & Reel
HEXFET
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
PD - 93849C
PROVISIONAL
TSSOP-8
V
DSS
R
DS(on)
max
I
D
0.014@V
GS
= -4.5V
-8.0A
-12V
0.019@V
GS
= -2.5V
-7.0A
0.027@V
GS
= -1.8V
-5.8A
4 = G
3 = S
2 = S
1 = D
1
2
3
4
G
D
S
5
6
7
8
8 = D
7 = S
6 = S
5 = D
IRF7702
2
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PROVISIONAL
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-12
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.007
V/C
Reference to 25C, I
D
= -1mA
0.014
V
GS
= -4.5V, I
D
= -8.0A
R
DS(on)
Static Drain-to-Source On-Resistance
0.019
V
GS
= -2.5V, I
D
= -7.0A
0.027
V
GS
= -1.8V, I
D
= -5.8A
V
GS(th)
Gate Threshold Voltage
-0.45
-1.2
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
26
S
V
DS
= -10V, I
D
= -8.0A
1.0
V
DS
= -12V, V
GS
= 0V
-25
V
DS
= -9.6V, V
GS
= 0V, T
J
= 70C
Gate-to-Source Forward Leakage
-100
V
GS
= -8.0V
Gate-to-Source Reverse Leakage
100
V
GS
= 8.0V
Q
g
Total Gate Charge
54
81
I
D
= -8.0A
Q
gs
Gate-to-Source Charge
7.8
12
nC
V
DS
= -9.6V
Q
gd
Gate-to-Drain ("Miller") Charge
15
23
V
GS
= -4.5V
t
d(on)
Turn-On Delay Time
16
V
DD
= -6.0V
t
r
Rise Time
21
I
D
= -1.0A
t
d(off)
Turn-Off Delay Time
320
R
D
= 6.0
t
f
Fall Time
250
R
G
= 6.0
C
iss
Input Capacitance
3470
V
GS
= 0V
C
oss
Output Capacitance
1040
pF
V
DS
= -10V
C
rss
Reverse Transfer Capacitance
670
= 1.0MHz
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width
300s; duty cycle
2%.
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.2
V
T
J
= 25C, I
S
= -1.5A, V
GS
= 0V
t
rr
Reverse Recovery Time
58
87
ns
T
J
= 25C, I
F
= -1.5A
Q
rr
Reverse RecoveryCharge
41
62
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
-70
-1.5
A
When mounted on 1 inch square copper board, t<10 sec
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
I
DSS
Drain-to-Source Leakage Current
nA
ns
S
D
G
IRF7702
www.irf.com
3
PROVISIONAL
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
10
100
1000
1.5
2.0
2.5
3.0
3.5
V = -15V
20s PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-VSD, Source-toDrain Voltage (V)
1.00
10.00
100.00
-I
SD
, Reverse Drain Current (A)
TJ = 25C
TJ = 150C
VGS = 0V
IRF7702
4
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PROVISIONAL
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Threshold Voltage Vs. Temperature
1
10
100
0
1000
2000
3000
4000
5000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
20
40
60
80
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-8.0A
V
= -9.6V
DS
-75
-50
-25
0
25
50
75
100
125
150
TJ , Temperature ( C )
0.20
0.40
0.60
0.80
-V
GS(th)
, Variace ( V )
ID = -250A
1
10
100
1000
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
IRF7702
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5
PROVISIONAL
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Typical Power Vs. Time
25
50
75
100
125
150
0.0
2.0
4.0
6.0
8.0
T , Case Temperature ( C)
-I , Drain Current (A)
C
D
0.01
0.10
1.00
10.00
100.00
Time (sec)
0
10
20
30
40
Power (W)
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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