HEXFET
Power MOSFET
12/21/00
IRF7726
Absolute Maximum Ratings
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1
Thermal Resistance
Parameter
Max.
Units
V
DS
Drain-Source Voltage
-30
V
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -10V
-7.0
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ -10V
-5.7
A
I
DM
Pulsed Drain Current
-28
P
D
@T
A
= 25C
Maximum Power Dissipation
1.79
W
P
D
@T
A
= 70C
Maximum Power Dissipation
1.14
W
Linear Derating Factor 0.01 W/C
V
GS
Gate-to-Source Voltage
20 V
T
J
, T
STG
Junction and Storage Temperature Range
-55 to +150
C
PD -94064
V
DSS
R
DS(on)
max
I
D
-30V
0.026@V
GS
= -10V
-
7.0A
0.040@V
GS
= -4.5V
-
6.0A
Parameter
Max.
Units
R
JA
Maximum Junction-to-Ambient
70
C/W
MICRO-8
Description
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (< 1.2mm)
l
Available in Tape & Reel
HEXFET
Power MOSFETs from International Recti-
fier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the ruggedized device design,
that International Rectifier is well known for, provides
the designer with an extremely efficient and reliable
device for battery and load management.
The new Micro8 package, with half the footprint area
of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.2mm)
of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.
T op V ie w
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
IRF7726
2
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Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.2
V
T
J
= 25C, I
S
= -1.8A, V
GS
= 0V
t
rr
Reverse Recovery Time
35
53
ns
T
J
= 25C, I
F
= -1.8A
Q
rr
Reverse Recovery Charge
32
48
C
di/dt = -100A/s
Source-Drain Ratings and Characteristics
-28
-1.8
A
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-30
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.016
V/C
Reference to 25C, I
D
= -1mA
0.026
V
GS
= -10V, I
D
= -7.0A
0.040
V
GS
= -4.5V, I
D
= -6.0A
V
GS(th)
Gate Threshold Voltage
-1.0
-2.5
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
10
S
V
DS
= -10V, I
D
= -7.0A
-15
V
DS
= -24V, V
GS
= 0V
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 70C
Gate-to-Source Forward Leakage
-100
V
GS
= -20V
Gate-to-Source Reverse Leakage
100
V
GS
= 20V
Q
g
Total Gate Charge
46
69
I
D
= -7.0A
Q
gs
Gate-to-Source Charge
8.0
nC
V
DS
= -15V
Q
gd
Gate-to-Drain ("Miller") Charge
8.1
V
GS
= -10V
t
d(on)
Turn-On Delay Time
15
23
V
DD
= -15V, V
GS
= -10V
t
r
Rise Time
25
38
I
D
= -1.0A
t
d(off)
Turn-Off Delay Time
227
341
R
G
= 6.0
t
f
Fall Time
107
161
R
D
= 15
C
iss
Input Capacitance
2204
V
GS
= 0V
C
oss
Output Capacitance
341
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
220
= 1.0MHz
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
400s; duty cycle
2%.
S
D
G
When mounted on 1 inch square copper board, t < 10 sec.
IRF7726
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
-I
D
, Drain-to-Source Current (A)
-2.5V
20s PULSE WIDTH
Tj = 25C
VGS
TOP -10.0V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
-I
D
, Drain-to-Source Current (A)
-2.5V
20s PULSE WIDTH
Tj = 150C
VGS
TOP -10.0V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
-10V
-7.0A
0.1
1
10
100
2.0
3.0
4.0
5.0
6.0
V = -15V
20s PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 150 C
J
T = 25 C
J
IRF7726
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
10
20
30
40
50
60
0
2
4
6
8
10
12
14
16
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-7.0A
V
=-15V
DS
V
=-24V
DS
0.1
1
10
100
0.0
1.5
3.0
4.5
6.0
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J
T = 25 C
J
1
10
100
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
1
10
100
0
400
800
1200
1600
2000
2400
2800
3200
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
IRF7726
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
0.0
2.0
4.0
6.0
8.0
T , Case Temperature ( C)
-I , Drain Current (A)
C
D
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
V
DS
V
GS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
IRF7726
6
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Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
-VGS, Gate -to -Source Voltage (V)
0.010
0.020
0.030
0.040
0.050
0.060
0.070
R
DS(on)
, Drain-to -Source On Resistance (
)
ID = -7.0A
0
10
20
30
40
50
60
-ID , Drain Current ( A )
0.000
0.040
0.080
0.120
R
DS ( on )
, Drain-to-Source On Resistance (
)
VGS = -4.5V
VGS = -10V
D.U.T.
V
DS
I
D
I
G
-3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
IRF7726
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7
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
-75
-50
-25
0
25
50
75
100
125
150
TJ , Temperature ( C )
1.2
1.5
1.8
2.1
2.4
-V
GS(th)
( V )
ID = -250A
Fig 16. Typical Power Vs. Time
0.001
0.010
0.100
1.000
10.000
100.000
Time (sec)
0
30
60
90
120
150
Power (W)
IRF7726
8
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Package Outline
Micro-8 Outline
Dimensions are shown in millimeters (inches)
Micro-8
Part Marking Information
P A R T N U M B E R
45 1
75 01
T O P
E X A M P L E : T H IS IS A N IR F 7 5 01
D A T E C O D E (Y W W )
Y = LA S T D IG IT O F Y E A R
W W = W E E K
A
IN C H E S M IL L IM E T E R S
M IN M A X M IN M A X
A
0 .1 0 ( .0 0 4 )
0 .2 5 (.0 1 0 ) M A M
H
1 2 3 4
8 7 6 5
D
- B -
3
3
E
- A -
e
6 X
e 1
- C -
B 8 X
0 .0 8 (.0 0 3 ) M C A S B S
A 1
L
8 X
C
8 X
N O TE S :
1 D IM E N S IO N IN G A N D TO L E R A N C IN G P E R A N S I Y 14 .5M -1 982 .
2 C O N TR O LL IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S D O N O T IN C LU D E M O LD F L AS H .
A .0 3 6 .0 4 4 0 .9 1 1 .1 1
A 1 .0 0 4 .0 0 8 0 .1 0 0 .2 0
B .0 1 0 .0 1 4 0 .2 5 0 .3 6
C .0 0 5 .0 0 7 0 .1 3 0 . 1 8
D .1 1 6 .1 2 0 2 .9 5 3 . 0 5
e .0 2 5 6 B A S IC 0 .6 5 B A S IC
e 1 .0 1 2 8 B A S IC 0 .3 3 B A S IC
E .1 1 6 .1 2 0 2 .9 5 3 .0 5
H .1 8 8 .1 9 8 4 .7 8 5 .0 3
L .0 1 6 .0 2 6 0 .4 1 0 .6 6
0 6 0 6
D IM
L E A D A S S IG N M E N T S
S IN G L E
D U A L
D D D D
D 1 D 1 D 2 D 2
S S S G
S 1 G 1 S 2 G 2
1 2 3 4
1 2 3 4
8 7 6 5
8 7 6 5
R E C O M M E N D E D F O O T P R IN T
1 .0 4
( .0 4 1 )
8 X
0 .3 8
( .0 1 5 )
8 X
3 .2 0
( .1 2 6 )
4 .2 4
( .1 6 7 )
5 .2 8
( .2 0 8 )
0 .6 5
( . 02 5 6 )
6 X
IRF7726
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9
Tape & Reel Information
Micro-8
Dimensions are shown in millimeters (inches)
3 3 0 . 0 0
( 1 2 .9 9 2 )
M A X .
1 4 .4 0 ( .5 6 6 )
1 2 .4 0 ( .4 8 8 )
N O T E S :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
F E E D D IR E C T IO N
T E R M IN A L N U M B E R 1
1 2 .3 ( .4 8 4 )
1 1 .7 ( .4 6 1 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
N O TE S :
1 . O U TL IN E C O N FO R M S TO E IA -4 81 & E IA -541.
2 . CO N TR O LL IN G D IM E N SIO N : M ILL IM E TE R .
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/00
Data and specifications subject to change without notice.
This product has been designed and qualified for the commercial market.
Qualification Standards can be found on IR's Web site.
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