Parameter
Max.
Units
V
DS
Drain- Source Voltage
20
V
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 4.5V
4.8
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 4.5V
3.9
A
I
DM
Pulsed Drain Current
19
P
D
@T
A
= 25C
Power Dissipation
1.2
P
D
@T
A
= 70C
Power Dissipation
0.76
Linear Derating Factor
9.5
mW/C
V
GS
Gate-to-Source Voltage
12
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
05/03/01
Parameter
Max.
Units
R
JA
Maximum Junction-to-Ambient
105
C/W
Thermal Resistance
Absolute Maximum Ratings
W
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1
IRF7757
HEXFET
Power MOSFET
V
DSS
R
DS(on)
max (m
)
)
)
)
)
I
D
20V
35@V
GS
= 4.5V
4.8A
40@V
GS
= 2.5V
3.8A
TSSOP-8
Description
l
Ultra Low On-Resistance
l
Dual N-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (< 1.2mm)
l
Available in Tape & Reel
l
Common Drain Configuration
HEXFET
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides the de-
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
8 = D
7 = D
6 = D
5 = D
1 = S1
2 = G1
3 = S2
4 = G2
4
3
2
1
5
6
7
8
PD - 94174
IRF7757
2
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Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.2
V
T
J
= 25C, I
S
= 1.2A, V
GS
= 0V
t
rr
Reverse Recovery Time
20
30
ns
T
J
= 25C, I
F
= 1.2A
Q
rr
Reverse Recovery Charge
10
15
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
A
19
1.2
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width
400s; duty cycle
2%.
Surface mounted on 1 in square Cu board
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
20
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.013
V/C
Reference to 25C, I
D
= 1mA
35
V
GS
= 4.5V, I
D
= 4.8A
40
V
GS
= 2.5V, I
D
= 3.8A
V
GS(th)
Gate Threshold Voltage
0.60
1.2
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
11
S
V
DS
= 10V, I
D
= 4.8A
1.0
V
DS
= 16V, V
GS
= 0V
25
V
DS
= 16V, V
GS
= 0V, T
J
= 70C
Gate-to-Source Forward Leakage
100
V
GS
= 12V
Gate-to-Source Reverse Leakage
-100
V
GS
= -12V
Q
g
Total Gate Charge
15
23
I
D
= 4.8A
Q
gs
Gate-to-Source Charge
2.5
nC
V
DS
= 16V
Q
gd
Gate-to-Drain ("Miller") Charge
4.8
V
GS
= 4.5V
t
d(on)
Turn-On Delay Time
9.5
V
DD
= 10V
t
r
Rise Time
9.2
I
D
= 1.0A
t
d(off)
Turn-Off Delay Time
36
R
G
= 6.2
t
f
Fall Time
14
V
GS
= 4.5V
C
iss
Input Capacitance
1340
V
GS
= 0V
C
oss
Output Capacitance
180
pF
V
DS
= 15V
C
rss
Reverse Transfer Capacitance
132
= 1.0MHz
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
m
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
S
D
G
IRF7757
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3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, Drain-to-Source Current (A)
1.5V
20s PULSE WIDTH
Tj = 25C
VGS
TOP 7.5V
5.0V
4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
I D
, Drain-to-Source Current (A)
1.5V
20s PULSE WIDTH
Tj = 150C
VGS
TOP 7.5V
5.0V
4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
4.5V
4.8A
1.5
2.0
2.5
3.0
VGS, Gate-to-Source Voltage (V)
1.00
10.00
100.00
I D
, Drain-to-Source Current
(
)
TJ = 25C
TJ = 150C
VDS = 15V
20s PULSE WIDTH
IRF7757
4
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
1
10
100
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
I D
, Drain-to-Source Current (A)
Tc = 25C
Tj = 150C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
0
4
8
12
16
20
0
1
2
3
4
5
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
4.8A
V
= 10V
DS
V
= 16V
DS
0.1
0.5
0.9
1.2
1.6
2.0
VSD, Source-toDrain Voltage (V)
0.10
1.00
10.00
100.00
I SD
, Reverse Drain Current (A)
TJ = 25C
TJ = 150C
VGS = 0V
IRF7757
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5
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature
( C)
I , Drain Current (A)
C
D
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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