www.irf.com
1
IRF7809A/IRF7811A
Parameter
Symbol
IRF7809A
IRF7811A
Units
Drain-Source Voltage
V
DS
30
28
V
Gate-Source Voltage
V
GS
12
Continuous Drain or Source
T
A
= 25C
I
D
14.5
11.4
Current (V
GS
4.5V)
T
L
= 90C
14.2
11.2
A
Pulsed Drain Current
I
DM
100
100
Power Dissipation
T
A
= 25C
P
D
2.5
W
T
L
= 90C
2.4
Junction & Storage Temperature Range
T
J
,
T
STG
55 to 150
C
Continuous Source Current (Body Diode)
I
S
2.5
2.5
A
Pulsed Source Current
I
SM
50
50
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
Description
These new devices employ advanced HEXFET
Power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make them ideal for high efficiency
DC-DC converters that power the latest generation of
microprocessors.
Both the IRF7809A and IRF7811A have been optimized
and are 100% tested for all parameters that are critical in
synchronous buck converters including R
DS(on)
, gate charge
and Cdv/dt-induced turn-on immunity. The IRF7809A offers
particulary low R
DS(on)
and high Cdv/dt immunity for
synchronous FET applications. The IRF7811A offers an
extremely low combination of Q
sw
& R
DS(on)
for reduced
losses in control FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
HEXFET
Chipset for DC-DC Converters
IRF7809A
IRF7811A
V
DS
30V
28V
R
DS
(on)
8.5 m
12 m
Q
G
73 nC
23 nC
Q
sw
22.5 nC
7 nC
Q
oss
30 nC
31 nC
Absolute Maximum Ratings
Parameter
Max.
Units
Maximum Junction-to-Ambient
R
JA
50
C/W
Maximum Junction-to-Lead
R
JL
25
C/W
Thermal Resistance
DEVICE RATINGS
T o p V ie w
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
IRF7809A/IRF7811A
SO-8
01/19/00
PROVISIONAL DATASHEET
PD - 93810
PD - 93811
www.irf.com
2
IRF7809A/IRF7811A
Parameter
Min
Typ
Max
Min
Typ
Max Units
Conditions
Diode Forward
V
SD
1.0
1.0
V
I
S
= 15A
, V
GS
= 0V
Voltage*
Reverse Recovery
Q
rr
94
82
nC
di/dt
~
700A/s
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
Reverse Recovery
Q
rr(s)
87
74
di/dt = 700A/s
Charge (with Parallel
(with 10BQ040)
Schottky)
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
Parameter
Min
Typ
Max
Min
Typ
Max Units
Conditions
Drain-to-Source
BV
DSS
30
28
V
V
GS
= 0V, I
D
= 250A
Breakdown Voltage*
Static Drain-Source
R
DS(on)
7
8.5
10
12
m
V
GS
= 4.5V, I
D
= 15A
on Resistance*
Gate Threshold Voltage*
V
GS(th)
1.0
1.0
V
V
DS
= V
GS
,I
D
= 250A
Drain-Source Leakage
I
DSS
30
30
A
V
DS
= 24V, V
GS
= 0
Current*
150
150
V
DS
= 24V, V
GS
= 0,
Tj = 100C
Gate-Source Leakage
I
GSS
100
100
nA
V
GS
= 12V
Current*
Total Gate Chg Cont FET*
Q
G
61
75
19
23
V
GS
=5V, I
D
=15A, V
DS
=16V
Total Gate Chg Sync FET*
Q
G
55
73
17
20.5
V
GS
= 5V, V
DS
< 100mV
Pre-Vth
Q
GS1
14
2.7
V
DS
= 16V, I
D
= 15A
Gate-Source Charge
Post-Vth
Q
GS2
3.5
1.3
nC
Gate-Source Charge
Gate to Drain Charge
Q
GD
13.5
4.5
Switch Chg(Q
gs2
+ Q
gd
)*
Q
sw
17
22.5
5.8
7.0
Output Charge*
Q
oss
25
30
26
31
V
DS
= 16V, V
GS
= 0
Gate Resistance
R
G
1.1
1.8
Turn-on Delay Time
t
d (on)
19
8
V
DD
= 16V, I
D
= 15A
Rise Time
t
r
9
4
ns
V
GS
= 5V
Turn-off Delay Time
t
d
(off)
32
16
Clamped Inductive Load
Fall Time
t
f
12
8
Input Capacitance
C
iss
7300
1800
Output Capacitance
C
oss
900
900
pF
V
DS
= 16V, V
GS
= 0
Reverse Transfer Capacitance C
rss
350
60
Electrical Characteristics
Source-Drain Rating & Characteristics
IRF7809A
IRF7811A
Current*
Charge
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
300 s; duty cycle
2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
oss
*
Devices are 100% tested to these parameters.
www.irf.com
4
IRF7809A/IRF7811A
SO-8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
33 0.0 0
( 12 .9 92 )
M A X .
14 .4 0 ( .5 6 6 )
12 .4 0 ( .4 8 8 )
N O T E S :
1 . C O N T R O L LIN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N FO R M S T O E IA -48 1 & E IA -54 1.
F E E D D IR E C T IO N
T E R M IN A L N U M B E R 1
1 2.3 ( .4 84 )
1 1.7 ( .4 61 )
8 .1 ( .31 8 )
7 .9 ( .31 2 )
N O T E S :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ) .
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA - 5 4 1 .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 3-30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171-0021 Japan Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:1 Kim Seng Promenade,Great World City West Tower, 13-11,Singapore 237994 Tel:65 838 4630
IR TAIWAN : 16F, Suite B, 319, Sec.2, Tun Hwa South Road, Taipei 10673, Taiwan, R.O.C. Tel : 886-2-2739-4230
http://www.irf.com/ Data and specifications subject to change without notice. 1/00
PDF 
ZIP