PRELIMINARY
HEXFET
Power MOSFET
PD - 9.1562A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
9/15/97
S O -8
V
DSS
= 30V
R
DS(on)
= 0.030
l
Generation V Technology
l
Ultra Low On-Resistance
l
N-Channel MOSFET
l
Surface Mount
l
Very Low Gate Charge and
Switching Losses
l
Fully Avalanche Rated
IRF9410
Description
T o p V ie w
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
Recommended upgrade: IRF7403 or IRF7413
Lower profile/smaller equivalent: IRF7603
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
20
T
A
= 25C
7.0
T
A
= 70C
5.8
Pulsed Drain Current
I
DM
37
Continuous Source Current (Diode Conduction)
I
S
2.8
T
A
= 25C
2.5
T
A
= 70C
1.6
Single Pulse Avalanche Energy
E
AS
70
mJ
Avalanche Current
I
AR
4.2
A
Repetitive Avalanche Energy
E
AR
0.25
mJ
Peak Diode Recovery dv/dt
dv/dt
5.0
V/ ns
Junction and Storage Temperature Range
T
J,
T
STG
-55 to + 150
C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambient
R
JA
50
C/W
Absolute Maximum Ratings
( T
A
= 25C Unless Otherwise Noted)
Continuous Drain Current
Maximum Power Dissipation
A
I
D
P
D
V
W
IRF9410
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.024
V/C
Reference to 25C, I
D
= 1mA
0.024 0.030
V
GS
= 10V, I
D
= 7.0A
0.032 0.040
V
GS
= 5.0V, I
D
= 4.0A
0.037 0.050
V
GS
= 4.5V, I
D
= 3.5A
V
GS(th)
Gate Threshold Voltage
1.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
14
S
V
DS
= 15V, I
D
= 7.0A
2.0
A
V
DS
= 24V, V
GS
= 0V
25
V
DS
= 24V, V
GS
= 0V, T
J
= 55C
Gate-to-Source Forward Leakage
100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
V
GS
= -20V
Q
g
Total Gate Charge
18
27
I
D
= 2.0A
Q
gs
Gate-to-Source Charge
2.4
3.6
nC
V
DS
= 15V
Q
gd
Gate-to-Drain ("Miller") Charge
4.9
7.4
V
GS
= 10V, See Fig. 10
t
d(on)
Turn-On Delay Time
7.3
15
V
DD
= 25V
t
r
Rise Time
8.3
17
ns
I
D
= 1.0A
t
d(off)
Turn-Off Delay Time
23
46
R
G
= 6.0
,
V
GS
= 10V
t
f
Fall Time
17
34
R
D
= 25
C
iss
Input Capacitance
550
V
GS
= 0V
C
oss
Output Capacitance
260
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
100
= 1.0MHz, See Fig. 9
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
0.78
1.0
V
T
J
= 25C, I
S
= 2.0A, V
GS
= 0V
t
rr
Reverse Recovery Time
40
80
ns
T
J
= 25C, I
F
= 2.0A
Q
rr
Reverse RecoveryCharge
63
130
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
37
2.8
A
S
D
G
Surface mounted on FR-4 board, t
10sec.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
4.6A, di/dt
120A/s, V
DD
V
(BR)DSS
,
T
J
150C
Notes:
Starting T
J
= 25C, L = 6.6mH
R
G
= 25
, I
AS
= 4.6A.
Pulse width
300s; duty cycle
2%.
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
IRF9410
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1
1 0
1 0 0
0 . 1
1
1 0
20 s P U LSE W I DTH
T = 25 C
A
J
D S
V , D ra in-to-S ou rce V o lta ge (V )
3.0 V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTT OM 3.0V
DI
,
D
r
ai
n
-
t
o
-
S
our
c
e
C
u
r
r
ent
(
A
)
1
1 0
1 0 0
0 . 1
1
1 0
A
D S
V , D rain-to -S ou rce Vo lta ge (V)
D
I
,
D
r
ai
n
-
t
o
-
S
our
c
e
C
u
r
r
ent
(
A
)
20 s P U LSE W I DTH
T = 15 0C
J
3. 0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTT OM 3.0V
1
1 0
1 0 0
3 . 0
3 . 5
4 . 0
4 . 5
5 . 0
5 . 5
T = 2 5 C
T = 1 5 0 C
J
J
G S
V , Ga te -to -S o u rce V o lta g e (V )
D
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
A
V = 1 0 V
2 0 s PU L SE W ID TH
D S
Fig 4. Typical Source-Drain Diode
Forward Voltage
0 . 1
1
1 0
1 0 0
0 . 4
0 . 6
0 . 8
1 . 0
1 . 2
T = 2 5C
T = 1 50 C
J
J
V = 0 V
G S
V , S o urce-to -Drain Vo lta ge (V )
I
, R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
IRF9410
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
0
4 0
8 0
1 2 0
1 6 0
2 0 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (C)
I
TOP 2.1A
3.7A
BOTTOM 4.6A
D
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
7.0A
0 . 0 2
0 . 0 3
0 . 0 4
0 . 0 5
0
5
1 0
1 5
2 0
2 5
R , Drain-to-Source On Resistance
A
I , Drain Current (A)
V = 10V
V = 4.5V
(
)
DS(on)
D
G S
G S
0 . 0 0
0 . 0 2
0 . 0 4
0 . 0 6
0 . 0 8
0 . 1 0
0 . 1 2
0 . 1 4
3
6
9
1 2
1 5
A
I = 7. 0A
D
G S
V - Ga te -to-So u rce V olta ge (V )
R
DS
(on) , Drain-to-Source On Resistance (
)
IRF9410
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1
1 0
1 0 0
C
,
C
a
pac
i
t
anc
e (
p
F
)
D S
V , Drai n-to -So urce V oltag e (V)
A
V = 0 V, f = 1M H z
C = C + C , C SH O RTE D
C = C
C = C + C
G S
is s gs gd ds
rs s gd
o ss ds g d
C
i s s
C
o s s
C
rs s
0
6
12
18
24
30
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
2.0A
V
= 15V
DS
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
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