Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ -10V
-19
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ -10V
-13
A
I
DM
Pulsed Drain Current
-72
P
D
@T
C
= 25C
Power Dissipation
150
P
D
@T
C
= 25C
Power Dissipation (PCB Mount)**
3.7
Linear Derating Factor
1.0
Linear Derating Factor (PCB Mount)**
0.025
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
640
mJ
I
AR
Avalanche Current
-19
A
E
AR
Repetitive Avalanche Energy
15
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.5
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
IRF9540S
HEXFET
Power MOSFET
PD - 9.917A
V
DSS
= -100V
R
DS(on)
= 0.20
I
D
= -19A
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220 is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case
1.0
R
JA
Junction-to-Ambient (PCB Mount)**
40
C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
W/C
W
C
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Repetitive Avalanche Rated
l
P Channel
l
175C Operating Temperature
l
Fast Switching
Description
SMD-220
S
D
G
3/21/03
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