PRELIMINARY
HEXFET
Power MOSFET
PD - 9.1560A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
8/25/97
S O -8
V
DSS
= -30V
R
DS(on)
= 0.25
IRF9953
Description
Recommended upgrade: IRF7306 or IRF7316
Lower profile/smaller equivalent: IRF7506
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
-30
Gate-Source Voltage
V
GS
20
T
A
= 25C
-2.3
T
A
= 70C
-1.8
Pulsed Drain Current
I
DM
-10
Continuous Source Current (Diode Conduction)
I
S
1.6
T
A
= 25C
2.0
T
A
= 70C
1.3
Single Pulse Avalanche Energy
E
AS
57
mJ
Avalanche Current
I
AR
-1.3
A
Repetitive Avalanche Energy
E
AR
0.20
mJ
Peak Diode Recovery dv/dt
dv/dt
-5.0
V/ ns
Junction and Storage Temperature Range
T
J,
T
STG
-55 to + 150
C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambient
R
JA
62.5
C/W
Absolute Maximum Ratings
( T
A
= 25C Unless Otherwise Noted)
Continuous Drain Current
Maximum Power Dissipation
A
I
D
P
D
V
W
D 1
D 1
D 2
D 2
G 1
S 2
G 2
S 1
T op V iew
8
1
2
3
4
5
6
7
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual P-Channel MOSFET
l
Surface Mount
l
Very Low Gate Charge and
Switching Losses
l
Fully Avalanche Rated
IRF9953
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
0.82
1.2
V
T
J
= 25C, I
S
= -1.25A, V
GS
= 0V
t
rr
Reverse Recovery Time
27
54
ns
T
J
= 25C, I
F
= -1.25A
Q
rr
Reverse RecoveryCharge
31
62
nC
di/dt = -100A/s
Source-Drain Ratings and Characteristics
16
1.3
A
Surface mounted on FR-4 board, t
10sec.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
-1.3A, di/dt
-92A/s, V
DD
V
(BR)DSS
,
T
J
150C
Notes:
Starting T
J
= 25C, L = 67mH
R
G
= 25
, I
AS
= -1.3A.
Pulse width
300s; duty cycle
2%.
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-30
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.015
V/C
Reference to 25C, I
D
= -1mA
0.165 0.250
V
GS
= 10V, I
D
= -1.0A
0.290 0.400
V
GS
= 4.5V, I
D
= -0.50A
V
GS(th)
Gate Threshold Voltage
-1.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
-2.4
S
V
DS
= -15V, I
D
= -2.3A
-2.0
V
DS
= 24V, V
GS
= 0V
-25
V
DS
= 24V, V
GS
= 0V, T
J
= 55C
Gate-to-Source Forward Leakage
100
V
GS
= -20V
Gate-to-Source Reverse Leakage
-100
V
GS
= 20V
Q
g
Total Gate Charge
6.1
12
I
D
= -2.3A
Q
gs
Gate-to-Source Charge
1.7
3.4
nC
V
DS
= -10V
Q
gd
Gate-to-Drain ("Miller") Charge
1.1
2.2
V
GS
= -10V, See Fig. 10
t
d(on)
Turn-On Delay Time
9.7
19
V
DD
= -10V
t
r
Rise Time
14
28
I
D
= -1.0A
t
d(off)
Turn-Off Delay Time
20
40
R
G
= 6.0
t
f
Fall Time
6.9
14
R
D
= 10
C
iss
Input Capacitance
190
V
GS
= 0V
C
oss
Output Capacitance
120
pF
V
DS
= -15V
C
rss
Reverse Transfer Capacitance
61
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
S
D
G
IRF9953
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
0 . 1
1
1 0
1 0 0
0 . 1
1
1 0
D
D S
20 s P U LSE W I DTH
T = 25 C
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , D ra in-to-S ou rce V o lta ge (V )
J
-3.0 V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
0 . 1
1
1 0
1 0 0
0 . 1
1
1 0
D
D S
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
r
c
e
C
u
rr
e
n
t
(
A
)
-V , D ra in-to-S ou rce V o lta ge (V )
-3 .0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
20 s P U LSE W I DTH
T = 15 0C
J
0 . 1
1
1 0
1 0 0
3 . 0
4 . 0
5 . 0
6 . 0
7 . 0
8 . 0
T = 2 5 C
T = 1 5 0 C
J
J
G S
D
A
-
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-V , Ga te -to -S o u rce V o ltag e (V )
V = -1 0 V
2 0 s P U L S E W ID T H
DS
Fig 4. Typical Source-Drain Diode
Forward Voltage
0 . 1
1
1 0
1 0 0
0 . 4
0 . 6
0 . 8
1 . 0
1 . 2
1 . 4
T = 25 C
T = 1 50 C
J
J
V = 0 V
G S
S D
SD
A
-
I
,
R
e
v
e
r
s
e D
r
ai
n
C
u
r
r
ent
(
A
)
-V , So urce-to-D ra in V oltag e (V )
IRF9953
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
-10V
-1.0A
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
0 . 0
1 . 0
2 . 0
3 . 0
4 . 0
5 . 0
A
-I , D rain C urrent (A )
D
V = -10V
V = -4.5V
G S
G S
R
DS(on
)
, Drain-to-Source On Resistance (
)
0 . 0 0
0 . 2 0
0 . 4 0
0 . 6 0
0 . 8 0
0
3
6
9
1 2
1 5
A
G S
I = -2. 3A
D
-V , G a te -to -S o urce V o lta g e ( V)
R
DS(on)
, Drain-to-Source On Resistance (
)
25
50
75
100
125
150
0
30
60
90
120
150
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
ID
TOP
BOTTOM
-0.58A
-1.0A
-1.3A
IRF9953
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
0
1 0 0
2 0 0
3 0 0
4 0 0
1
1 0
1 0 0
C
,
C
a
pac
i
t
anc
e (
p
F
)
A
D S
-V , Drain -to -So urce V oltag e (V)
V = 0V , f = 1MH z
C = C + C , C S H OR TED
C = C
C = C + C
G S
iss gs g d ds
rs s g d
os s ds gd
C
is s
C
o s s
C
rs s
0
2
4
6
8
10
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-2.3A
V
=-10V
DS
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF9953
Package Outline
SO8 Outline
SO8
Part Marking Information
K x 45
C
8X
L
8X
H
0.25 (.01 0) M A M
A
0.10 (.0 04)
B 8X
0.25 ( .010) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
R E C O MM EN D E D F O O T PR IN T
0.72 (.028 )
8X
1.78 (.07 0)
8X
6.46 ( .255 )
1.27 ( .0 50 )
3X
D IM
IN C H E S M IL L IM E T E R S
M IN M A X M IN M A X
A .0 5 3 2 . 0 6 8 8 1 .3 5 1 .7 5
A 1 .0 0 4 0 . 0 0 9 8 0 .1 0 0 .2 5
B .0 1 4 . 0 1 8 0 .3 6 0 .4 6
C .0 0 7 5 .0 09 8 0 .1 9 0 .2 5
D .1 8 9 .1 96 4 .8 0 4 .9 8
E .1 5 0 . 1 5 7 3 .8 1 3 .9 9
e .0 5 0 B A S IC 1 .2 7 B A S IC
e 1 .0 2 5 B A S IC 0 .6 3 5 B A S IC
H .2 2 8 4 .2 44 0 5 .8 0 6 .2 0
K .0 1 1 . 0 1 9 0 .2 8 0 .4 8
L 0 .1 6 .0 5 0 0 .4 1 1 .2 7
0 8 0 8
N OT E S :
1. D IME N S IO N IN G AN D T O LE R A N C IN G PE R A N S I Y 14.5M- 1982.
2. C O N T R O LLIN G D IME N S IO N : IN C H .
3. D IME N S IO N S A R E S H O W N IN M ILLIME T ER S (IN C H E S) .
4. O U TLIN E C O N F O R M S T O JE D E C O U TLIN E MS -01 2AA .
D IM EN S IO N D O ES N O T IN C LU D E M OL D P R O T R U S IO N S
MO LD PR O TR U SIO N S N O T T O E XC EE D 0.25 (.006).
D IM EN S IO N S IS T H E LE N G T H O F LE AD F O R SO LD E R IN G T O A S U B ST R A T E..
5
6
A1
e1
E X A M P L E : TH IS IS A N IR F 7 101
D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W E E K
W A F E R
L O T C O D E
(L A S T 4 D IG IT S )
XX X X
B O T TO M
P A R T N U M B E R
T OP
IN T E R N A TI ON A L
R E C T IF IE R
L O G O
F 7 1 01
3 12
IRF9953
SO8
Dimensions are shown in millimeters (inches)
Tape & Reel Information
3 30 .00
(12 .9 92 )
M A X .
1 4.4 0 ( .5 66 )
1 2.4 0 ( .4 88 )
N O T ES :
1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T LIN E C O N F O R M S T O E IA -48 1 & EIA -5 41 .
F E E D D IR E C T IO N
T E R M IN A L N U M BE R 1
1 2. 3 ( .48 4 )
1 1. 7 ( .46 1 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
N O T E S :
1 . CO NT R O LL IN G DIM EN S IO N : M ILL IM E T E R.
2 . A LL D IM E NS IO NS AR E S HO W N IN M ILL IM E T E R S( IN CH ES ) .
3 . O U T LINE C O N F O RM S T O E IA -4 81 & E IA - 54 1.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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