Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 0V, TC = 25C
Continuous Drain Current
7.1
ID @ VGS = 0V, TC = 100C
Continuous Drain Current
4.5
IDM
Pulsed Drain Current
2 8
PD @ TC = 25C
Max. Power Dissipation
15 0
W
Linear Derating Factor
1.2
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
8 3 0
mJ
IAR
Avalanche Current
7.1
A
EAR
Repetitive Avalanche Energy
1 5
mJ
dv/dt
Peak Diode Recovery dv/dt
2.0
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
11.5(typical)
g
PD - 90574
The HEXFET
technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
o
C
A
REPETITIVE AVALANCHE AND dv/dt RATED
IRFAE50
HEXFET
TRANSISTORS
THRU-HOLE (TO-204AA/AE)
01/24/01
www.irf.com
1
800V, N-CHANNEL
TO-3
Product Summary
Part Number BVDSS R
DS(on)
I
D
IRFAE50 800V 1.2
7.1
Features:
n
Repetitive Avalanche Ratings
n
Dynamic dv/dt Rating
n
Hermetically Sealed
n
Simple Drive Requirements
n
Ease of Paralleling
For footnotes refer to the last page
IRFAE50
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
--
--
0.83
RthJA
Junction to Ambient
--
-- 30
Typical socket mount
C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
7.1
ISM
Pulse Source Current (Body Diode)
--
--
2 8
VSD
Diode Forward Voltage
--
--
1.8
V
T
j
= 25C, IS =7.1A, VGS = 0V
trr
Reverse Recovery Time
--
--
1600
nS
Tj = 25C, IF =7.1A, di/dt
100A/
s
QRR
Reverse Recovery Charge
--
--
1 3
C
VDD
50V
t o n
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
8 00
--
--
V
VGS = 0V, ID = 1.0mA
BVDSS/
TJ
Temperature Coefficient of Breakdown
--
0.98
--
V/C
Reference to 25C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
--
1.2 VGS = 10V, ID = 4.5A
Resistance
--
-- 1.4
VGS = 10V, ID = 7.1A
VGS(th)
Gate Threshold Voltage
2.0
-- 4.0 V VDS = VGS, ID = 250A
gfs
Forward Transconductance
5.9
--
--S (
) VDS > 15V, IDS = 4.5A
IDSS
Zero Gate Voltage Drain Current
--
--
2 5
VDS=640V ,VGS = 0V
--
--
2 5 0
VDS = 640V
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
--
--
-100
VGS = -20V
Qg
Total Gate Charge
8 4
--
1 9 0
VGS =10V, ID=7.1A
Qgs
Gate-to-Source Charge
6.6
--
1 5
nC
VDS = 400V
Qgd
Gate-to-Drain (`Miller') Charge
4 8
--
110
td
(on)
Turn-On Delay Time
--
--
3 2
VDD = 400V, ID = 7.1A,
t r
Rise Time
--
--
6 8
RG =2.35
td
(off)
Turn-Off Delay Time
--
--
7 8
tf
Fall Time
--
--
2 4
LS + LD
Total Inductance
--
6.1
--
Ciss
Input Capacitance
--
2800
VGS = 0V, VDS = 25V
Coss
Output Capacitance
--
400
--
pF
f = 1.0MHz
Crss
Reverse
2 0 0
nA
nH
n s
A
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
www.irf.com
3
IRFAE50
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRFAE50
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
13 a& b
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5
IRFAE50
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
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