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IRFB16N60L
SMPS MOSFET
HEXFET
Power MOSFET
Features and Benefits
SuperFast body diode eliminates the need for external
diodes in ZVS applications.
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise immunity
.
TO-220AB
10/19/04
www.irf.com
1
S
D
G
Applications
Zero Voltage Switching SMPS
Telecom and Server Power Supplies
Uninterruptible Power Supplies
Motor Control applications
V
DSS
R
DS(on)
typ.
Trr
typ.
I
D
600V
385m
130ns
16A
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
C
= 25C Continuous Drain Current, V
GS
@ 10V
16
I
D
@ T
C
= 100C Continuous Drain Current, V
GS
@ 10V
10
A
I
DM
Pulsed Drain Current
c
60
P
D
@T
C
= 25C Power Dissipation
310
W
Linear Derating Factor
2.5
W/C
V
GS
Gate-to-Source Voltage
30
V
dv/dt
Peak Diode Recovery dv/dt
e
11
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
1.1(10)
Nm (lbfin)
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
16
MOSFET symbol
(Body Diode)
A
showing the
I
SM
Pulsed Source Current
60
integral reverse
(Body Diode)
c
p-n junction diode.
V
SD
Diode Forward Voltage
1.5
V
T
J
= 25C, I
S
= 16A, V
GS
= 0V
f
t
rr
Reverse Recovery Time
130
200
ns T
J
= 25C, I
F
= 16A
240
360
T
J
= 125C, di/dt = 100A/s
f
Q
rr
Reverse Recovery Charge
450
670
nC T
J
= 25C, I
S
= 16A, V
GS
= 0V
f
1080 1620
T
J
= 125C, di/dt = 100A/s
f
I
RRM
Reverse Recovery Current
5.8
8.7
A
T
J
= 25C
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
PD - 94631A
IRFB16N60L
2
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Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 12)
Starting T
J
= 25C, L = 2.5mH, R
G
= 25
,
I
AS
= 16A.(See Figure 14a)
I
SD
16A, di/dt
650A/s, V
DD
V
(BR)DSS
,
T
J
150C.
Pulse width
300s; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff.(ER) is a fixed capacitance that stores the same energy
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90C
Static @ T
J
= 25C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
600
V
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.39
V/C
R
DS(on)
Static Drain-to-Source On-Resistance
385
460
m
V
GS(th)
Gate Threshold Voltage
3.0
5.0
V
I
DSS
Drain-to-Source Leakage Current
50
A
2.0
mA
I
GSS
Gate-to-Source Forward Leakage
100
nA
Gate-to-Source Reverse Leakage
-100
R
G
Internal Gate Resistance
0.79
Dynamic @ T
J
= 25C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
8.3
S
Q
g
Total Gate Charge
100
Q
gs
Gate-to-Source Charge
30
nC
Q
gd
Gate-to-Drain ("Miller") Charge
46
t
d(on)
Turn-On Delay Time
20
t
r
Rise Time
44
ns
t
d(off)
Turn-Off Delay Time
28
t
f
Fall Time
5.5
C
iss
Input Capacitance
2720
C
oss
Output Capacitance
260
C
rss
Reverse Transfer Capacitance
20
pF
C
oss
eff.
Effective Output Capacitance
120
C
oss
eff. (ER)
Effective Output Capacitance
100
(Energy Related)
Avalanche Characteristics
Symbol
Parameter
Typ.
Units
E
AS
Single Pulse Avalanche Energy.
d
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Units
R
JC
Junction-to-Case
h
C/W
R
JA
Junction-to-Ambient
h
62
Max.
0.4
V
DS
= 25V
= 1.0MHz, See Fig. 5
16
31
Max.
310
V
GS
= 0V,V
DS
= 0V to 480V
g
I
D
= 16A
R
G
= 1.8
V
GS
= 10V, See Fig. 11a & 11b
f
V
GS
= 0V
I
D
= 16A
V
DS
= 480V
V
GS
= 10V, See Fig. 7 & 15
f
V
DD
= 300V
V
GS
= 30V
f = 1MHz, open drain
Conditions
V
DS
= 50V, I
D
= 9.0A
V
GS
= -30V
V
DS
= V
GS
, I
D
= 250A
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, V
GS
= 0V, T
J
= 125C
Conditions
V
GS
= 0V, I
D
= 250A
Reference to 25C, I
D
= 1mA
V
GS
= 10V, I
D
= 9.0A
f
IRFB16N60L
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3
Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.0V
20s PULSE WIDTH
Tj = 150C
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM
5.0V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.0V
20s PULSE WIDTH
Tj = 25C
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM
5.0V
4
6
8
10
12
14
16
VGS, Gate-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
TJ = 25C
TJ = 150C
VDS = 50V
20s PULSE WIDTH
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
ID = 15A
VGS = 10V
IRFB16N60L
4
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Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 8. Typical Source-Drain Diode
Forward Voltage
Fig 7. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 6. Typ. Output Capacitance
Stored Energy vs. V
DS
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
100
200
300
400
500
600
700
VDS, Drain-to-Source Voltage (V)
0
5
10
15
20
25
E
n
e
r
g
y
(
J
)
0
10
20
30
40
50
60
70
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 480V
VDS= 300V
VDS= 120V
ID= 15A
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25C
TJ = 150C
VGS = 0V
IRFB16N60L
www.irf.com
5
Fig 9. Maximum Safe Operating Area
Fig 10. Maximum Drain Current vs.
Case Temperature
V
DS
Pulse Width 1 s
Duty Factor 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
V
DD
Fig 11a. Switching Time Test Circuit
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 11b. Switching Time Waveforms
1
10
100
1000
10000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
Tc = 25C
Tj = 150C
Single Pulse
25
50
75
100
125
150
TC , Case Temperature (C)
0
2
4
6
8
10
12
14
16
18
I D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
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