IRFB20N50K
4/2/02
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1
SMPS MOSFET
HEXFET
Power MOSFET
V
DSS
R
DS(on)
typ.
I
D
500V
0.21
20A
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
20
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
12
A
I
DM
Pulsed Drain Current
80
P
D
@T
C
= 25C
Power Dissipation
280
W
Linear Derating Factor
2.2
W/C
V
GS
Gate-to-Source Voltage
30
V
dv/dt
Peak Diode Recovery dv/dt
6.9
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300
(1.6mm from case )
C
Mounting Torque, 6-32 or M3 screw
10
N
Absolute Maximum Ratings
TO-220AB
l
Switch Mode Power Supply (SMPS)
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency
Circuits
Benefits
Applications
l
Low Gate Charge Qg results in Simple Drive Requirement
l
Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
l
Fully Characterized Capacitance and Avalanche Voltage
and Current
l
Low R
DS(on)
Symbol
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
330
mJ
I
AR
Avalanche Current
20
A
E
AR
Repetitive Avalanche Energy
28
mJ
Avalanche Characteristics
Symbol
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.45
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
58
Thermal Resistance
PD - 94418
IRFB20N50K
2
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Dynamic @ T
J
= 25C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
500
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.61
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.21 0.25
V
GS
= 10V, I
D
= 12A
V
GS(th)
Gate Threshold Voltage
3.0
5.0
V
V
DS
= V
GS
, I
D
= 250A
50
A
V
DS
= 500V, V
GS
= 0V
250
A
V
DS
= 400V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
100
V
GS
= 30V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -30V
Static @ T
J
= 25C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
20A, di/dt
350A/s, V
DD
V
(BR)DSS
,
T
J
150C
Notes:
Starting T
J
= 25C, L = 1.6mH, R
G
= 25
,
I
AS
= 20A,
Pulse width
400s; duty cycle
2%.
Symbol
Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
11
S
V
DS
= 50V, I
D
= 12A
Q
g
Total Gate Charge
110
I
D
= 20A
Q
gs
Gate-to-Source Charge
33
nC
V
DS
= 400V
Q
gd
Gate-to-Drain ("Miller") Charge
54
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
22
V
DD
= 250V
t
r
Rise Time
74
I
D
= 20A
t
d(off)
Turn-Off Delay Time
45
R
G
= 7.5
t
f
Fall Time
33
V
GS
= 10V,See Fig. 10
C
iss
Input Capacitance
2870
V
GS
= 0V
C
oss
Output Capacitance
320
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
34
pF
= 1.0MHz, See Fig. 5
C
oss
Output Capacitance
3480
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
85
V
GS
= 0V, V
DS
= 400V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
160
V
GS
= 0V, V
DS
= 0V to 400V
ns
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.5
V
T
J
= 25C, I
S
= 20A, V
GS
= 0V
t
rr
Reverse Recovery Time
520
780
ns
T
J
= 25C, I
F
= 20A
Q
r r
Reverse Recovery Charge
5.3
8.0
C
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
S
D
G
Diode Characteristics
20
80
A
IRFB20N50K
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.0V
20s PULSE WIDTH
Tj = 25C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
5.0
6.0
7.0
8.0
9.0
10.0
VGS, Gate-to-Source Voltage (V)
0.0
0.1
1.0
10.0
100.0
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
TJ = 25C
TJ = 150C
VDS = 50V
20s PULSE WIDTH
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.0V
20s PULSE WIDTH
Tj = 150C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
-60
-40
-20
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Temperature
( C)
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
On
R
e
s
i
s
t
a
n
c
e
(
N
or
m
a
l
i
z
ed)
J
D
S
(
on)
V
=
I
=
GS
D
10V
20A
IRFB20N50K
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd , C ds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
1
10
100
1000
10000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25C
Tj = 150C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100sec
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25C
TJ = 150C
VGS = 0V
0
20
40
60
80
100
120
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V ,
G
a
t
e
-
t
o-
Sour
c
e
Vol
t
age (
V
)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I
=
D
13
21A
V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
I
D
= 20A
IRFB20N50K
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5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
mal
Res
pons
e
(
Z
)
1
th
JC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
T
C
, Case Temperature (C)
25
50
75
100
125
150
0
4
8
12
16
20
I
,
D
r
ai
n C
u
r
r
ent
(
A
)
D
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