Notes
through
are on page 11
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12/12/01
IRFB52N15D
IRFS52N15D
IRFSL52N15D
SMPS MOSFET
HEXFET
Power MOSFET
V
DSS
R
DS(on)
max
I
D
150V
0.032
60A
PD - 94357
D
2
Pak
IRFS52N15D
TO-220AB
IRFB52N15D
TO-262
IRFSL52N15D
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
60
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
43
A
I
DM
Pulsed Drain Current
240
P
D
@T
A
= 25C
Power Dissipation
3.8
W
P
D
@T
C
= 25C
Power Dissipation
320
Linear Derating Factor
2.1
W/C
V
GS
Gate-to-Source Voltage
30
V
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting torqe, 6-32 or M3 screw
10 lbfin (1.1Nm)
Absolute Maximum Ratings
l
High frequency DC-DC converters
Benefits
Applications
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.47
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
R
JA
Junction-to-Ambient
40
IRFB/IRFS/IRFSL52N15D
2
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Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
19
S
V
DS
= 50V, I
D
= 36A
Q
g
Total Gate Charge
79 120 I
D
= 36A
Q
gs
Gate-to-Source Charge
25
37
nC
V
DS
= 120V
Q
gd
Gate-to-Drain ("Miller") Charge
34
51
V
GS
= 10V,
t
d(on)
Turn-On Delay Time
16
V
DD
= 75V
t
r
Rise Time
47
I
D
= 36A
t
d(off)
Turn-Off Delay Time
28
R
G
= 2.5
t
f
Fall Time
25
V
GS
= 10V
C
iss
Input Capacitance
2770
V
GS
= 0V
C
oss
Output Capacitance
590
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
110
pF
= 1.0MHz
C
oss
Output Capacitance
3940
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
260
V
GS
= 0V, V
DS
= 120V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
550
V
GS
= 0V, V
DS
= 0V to 120V
Dynamic @ T
J
= 25C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
470
mJ
I
AR
Avalanche Current
36
A
E
AR
Repetitive Avalanche Energy
32
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.5
V
T
J
= 25C, I
S
= 36A, V
GS
= 0V
t
rr
Reverse Recovery Time
140
210
nS
T
J
= 25C, I
F
= 36A
Q
rr
Reverse RecoveryCharge
780 1170
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
60
240
A
Static @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
150
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.16 V/C Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.032
V
GS
= 10V, I
D
= 36A
V
GS(th)
Gate Threshold Voltage
3.0
5.0
V
V
DS
= V
GS
, I
D
= 250A
25
A
V
DS
= 150V, V
GS
= 0V
250
V
DS
= 120V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 30V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -30V
I
GSS
I
DSS
Drain-to-Source Leakage Current
IRFB/IRFS/IRFSL52N15D
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60
-40
-20
0
20
40
60
80
100
120 140
160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature
( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I
=
GS
D
10V
60A
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, Drain-to-Source Current (A)
5.0V
300s PULSE WIDTH
Tj = 25C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, Drain-to-Source Current (A)
5.0V
300s PULSE WIDTH
Tj = 175C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
5.0
7.0
9.0
11.0
13.0
15.0
VGS, Gate-to-Source Voltage (V)
1.00
10.00
100.00
1000.00
I D
, Drain-to-Source Current
(
)
TJ = 25C
TJ = 175C
VDS = 15V
300s PULSE WIDTH
IRFB/IRFS/IRFSL52N15D
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
20
40
60
80
100
0
2
5
7
10
12
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I
=
D
36A
V
= 30V
DS
V
= 75V
DS
V
= 120V
DS
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-toDrain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
I SD
, Reverse Drain Current (A)
TJ = 25C
TJ = 175C
VGS = 0V
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
I D
, Drain-to-Source Current (A)
Tc = 25C
Tj = 175C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
IRFB/IRFS/IRFSL52N15D
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5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
T , Case Temperature
( C)
I , Drain Current (A)
C
D
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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